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Toshiba America Electronic Components TC59SM708AFT-80 IC,SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC
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TC59SM708AFT Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC59SM708AFT-70		Toshiba	4,194,304 Words x 4 Banks x 8 Bits Synchronous Dynamic RAM		Original	PDF
TC59SM708AFT-75		Toshiba	4,194,304 Words x 4 Banks x 8 Bits Synchronous Dynamic RAM		Original	PDF
TC59SM708AFT-80		Toshiba	4,194,304 Words x 4 Banks x 8 Bits Synchronous Dynamic RAM		Original	PDF
TC59SM708AFTL-70		Toshiba	4,194,304 Words x 4 Banks x 8 Bits Synchronous Dynamic RAM		Original	PDF
TC59SM708AFTL-75		Toshiba	4,194,304 Words x 4 Banks x 8 Bits Synchronous Dynamic RAM		Original	PDF
TC59SM708AFTL-80		Toshiba	4,194,304 Words x 4 Banks x 8 Bits Synchronous Dynamic RAM		Original	PDF

TC59SM708AFT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TC59SM716FT-75 Abstract: TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75 Text: TOSHIBA AMERICA ELECTRONIC COMPONENTS DRAM COMPONENT PRODUCTS SELECTION GUIDE January 2002 Subject to change without notice ORG TYPE PKG SPEED (ns) BANKS ROW/ COL STATUS (2) Des Rec(3) FEATURES DATASHEET TC59RM718MB/RB(1) 8Mx18 Rambus CSP-62 800/711/600 MHz	Original	PDF	TC59RM718MB/RB 8Mx18 CSP-62 PC800/700/600 TC59RM716MB/RB 8Mx16 TC59RM716GB TC59SM716FT-75 TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75
TC59SM716AFT Abstract: TC59SM716 Text: TC59SM716/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM	Original	PDF	TC59SM716/08/04AFT/AFTL-70 152-WORDS 16-BITS 304-WORDS 608-WORDS TC59SM716AFT/AFTL TC59SM708AFT/AFTL TC59SM704AFT/AFTL TC59SM716AFT TC59SM716
TC59SM716 Abstract: No abstract text available Text: TC59SM716/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM	Original	PDF	TC59SM716/08/04AFT/AFTL-70 152-WORDS 16-BITS 304-WORDS 608-WORDS TC59SM716AFT/AFTL TC59SM708AFT/AFTL TC59SM704AFT/AFTL TC59SM716
Untitled Abstract: No abstract text available Text: TC59SM716/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM	Original	PDF	TC59SM716/08/04AFT/AFTL-70 152-WORDS 16-BITS 304-WORDS 608-WORDS TC59SM716AFT/AFTL TC59SM708AFT/AFTL TC59SM704AFT/AFTL
Untitled Abstract: No abstract text available Text: TC59SM716/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM	Original	PDF	TC59SM716/08/04AFT/AFTL-70 152-WORDS 16-BITS 304-WORDS 608-WORDS TC59SM716AFT/AFTL TC59SM708AFT/AFTL TC59SM704AFT/AFTL
Untitled Abstract: No abstract text available Text: TOSHIBA THMY12N11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY12N11 216-WORD 64-BIT THMY12N11A TC59SM708AFT/AFTL 168-pin 64-bit
70l7 Abstract: No abstract text available Text: TO SH IBA THMY12E11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E H A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY12E11A70 THMY12EHA 216-word 72-bit TC59SM708AFT/AFTL 72-bit 75/75L 70l7
D018 Abstract: D019 D032 JEP-106 Text: T O S H IB A THMY25N01A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N01A is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY25N01 432-WORD 64-BIT THMY25N01A TC59SM708AFT/AFTL 168-pin 64-bit D018 D019 D032 JEP-106
THMY12E10A70 Abstract: ras 1215 Text: TOSHIBA THMY12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.	OCR Scan	PDF	THMY12E10A70 216-WORD 72-BIT THMY12E10A TC59SM708AFT 72-bit THMY12E10A) ras 1215
D036 Abstract: D018 D019 D032 D051 Text: T O S H IB A THMY25E01A70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E01A is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY25E01 432-WORD 72-BIT THMY25E01A TC59SM708AFT/AFTL 72-bit 75/75L D036 D018 D019 D032 D051
RA9-RA10 Abstract: 08l01 Text: TOSHIBA THMY12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.	OCR Scan	PDF	THMY12E10A70 THMY12E10A 216-word 72-bit TC59SM708AFT 72-bit Y12E10A) RA9-RA10 08l01
70l7 Abstract: THMY12E11A70 Text: TOSHIBA THMY12E11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E H A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY12E11A70 THMY12EHA 216-word 72-bit TC59SM708AFT/AFTL 72-bit 75/75L 70l7
THMY12N11A70 Abstract: No abstract text available Text: TOSHIBA THMY12N11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY12N11A70 216-WORD 64-BIT THMY12N11A TC59SM708AFT/AFTL 168-pin 64-bit
THMY12E10A70 Abstract: No abstract text available Text: TOSHIBA THMY12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.	OCR Scan	PDF	THMY12E10A70 216-WORD 72-BIT THMY12E10A TC59SM708AFT 72-bit THMY12E10A)