Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AN215A Search Results

    AN215A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN215A Freescale Semiconductor RF Small Signal Design Using Two-Port Parameters Original PDF
    AN215A Motorola AN215A Application Note RF Small Signal Design Using Two-Port Parameters Original PDF
    AN215A Analog Devices Designers Guide to Flash A-D Testing: Part 1 Scan PDF
    AN-215A Analog Devices Designers Guide to Flash-ADC Testing, Part 1 Scan PDF

    AN215A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


    Original     		PDF AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A

    A05T

    Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200
    Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


    Original     		PDF MRF1550T1/D MRF1550T1 MRF1550FT1 A05T AN211A AN215A AN721 MRF1550FT1 VK200

    MRF1507

    Abstract: AN721 zener diode z3 AN211A AN215A MRF1507T1 Nippon capacitors GP 724 DIODE
    Text: MOTOROLA Order this document by MRF1507/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1507/D MRF1507 MRF1507T1 DEVICEMRF1507/D AN721 zener diode z3 AN211A AN215A MRF1507T1 Nippon capacitors GP 724 DIODE

    hf class AB power amplifier mosfet

    Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
    Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 hf class AB power amplifier mosfet Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973

    MRF1550

    Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200
    Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 13, 6/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


    Original     		PDF MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1 MRF1550 FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N VK200

    MRF1513 equivalent

    Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
    Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513/D MRF1513T1 MRF1513T1 MRF1513 equivalent 2743021446 MRF1513 AN721 J524 AN211A AN215A Transistor J438 J182 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1517N MRF1517NT1

    adc 0304

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1550T1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


    Original     		PDF MRF1550T1 MRF1550NT1 MRF1550FNT1 MRF1550FT1 adc 0304

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1513 MRF1513NT1. MRF1513T1

    transistor c36

    Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
    Text: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband


    Original     		PDF MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1/D MRF1550T1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518/D MRF1518T1

    MRF1535N

    Abstract: MRF1535FNT1
    Text: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 11, 2/2008 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices


    Original     		PDF MRF1535N MRF1535NT1 MRF1535FNT1 MRF1535FNT1

    s11 hall magnetic sensor

    Abstract: No abstract text available
    Text: WHITE PAPER: WP016 eGaN FET Small Signal RF Performance eGaN® FET Small Signal RF Performance EFFICIENT POWER CONVERSION Michael de Rooij, Ph.D., Executive Director of Applications Engineering and Johan Strydom, Ph.D., V.P., Applications, Efficient Power Conversion Corporation


    Original     		PDF WP016 EPC2012 EPC2012 s11 hall magnetic sensor

    mrf5015

    Abstract: S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors
    Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF5015/D MRF5015 MRF5015/D* mrf5015 S2184 AN721 "RF MOSFETs" flange RF termination 50 S11 zener diode AN211A AN215A MRF5015 equivalent Nippon capacitors

    TRIMMER capacitor

    Abstract: MRF1535FT1 "RF power MOSFETs" 3.40 pf capacitor MRF153 A05T A113 AN211A AN215A AN721
    Text: Freescale Semiconductor Technical Data Document Number: MRF1535T1 Rev. 8, 5/2006 Replaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1535T1 MRF1535NT1/FNT1. MRF1535FT1 MRF1535T1 TRIMMER capacitor MRF1535FT1 "RF power MOSFETs" 3.40 pf capacitor MRF153 A05T A113 AN211A AN215A AN721

    TRIMMER capacitor

    Abstract: MRF1535FNT1 "RF power MOSFETs" FREESCALE PACKING TRIMMER capacitor 160 pF A05T A113 AN211A AN215A AN721
    Text: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 13, 6/2009 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices


    Original     		PDF MRF1535N MRF1535NT1 MRF1535FNT1 MRF1535NT1 TRIMMER capacitor MRF1535FNT1 "RF power MOSFETs" FREESCALE PACKING TRIMMER capacitor 160 pF A05T A113 AN211A AN215A AN721

    AN721

    Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial


    Original     		PDF MRF1518/D MRF1518T1 MRF1518T1 AN721 J361 AN211A AN215A transistor j334 j327 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    F5003

    Abstract: 1N4734
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan     		PDF F5003 MRF5003 MRFS003 AN215A, F5003 1N4734

    MRF162

    Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance


    OCR Scan     		PDF MRF162, MRF162 AN215A RF162 S21171 triode FU 33 MOTOROLA TRANSISTOR 712

    MRF1507

    Abstract: PJ 0459
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The MRF1507 is designed fo r broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan     		PDF MRF1507 AN215A, MRF1507T1 PJ 0459