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    XP4506 Search Results

    XP4506 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XP4506
    		Panasonic Composite Transistors Original PDF
    XP4506
    		Panasonic Silicon NPN epitaxial planer transistor Original PDF
    XP4506EN
    		Panasonic TRANS GP BJT NPN 20V 0.3A 6SC-88 Original PDF

    XP4506 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sd1915F

    Abstract: 2SD1915 vebo 25 XP4506
    Contextual Info: Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage


    Original     		XP4506 2SD1915F 2sd1915F 2SD1915 vebo 25 XP4506 PDF

    2sd1915F

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 1.25±0.10 2.1±0.1


    Original     		2002/95/EC) XP04506 XP4506) 2sd1915F PDF

    2SD1915F

    Abstract: XP04506 XP4506
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		2002/95/EC) XP04506 XP4506) 2SD1915F XP04506 XP4506 PDF

    2SD1915F

    Abstract: XP04506 XP4506 2SD1915
    Contextual Info: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● ● 4 Features 0.2±0.1 High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 5° ● 0.12+0.05 –0.02 1.25±0.10 2.1±0.1


    Original     		XP04506 XP4506) 2SD1915F 2SD1915F XP04506 XP4506 2SD1915 PDF

    2SD1915

    Abstract: 2SD1915F XP04506 XP4506
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		2002/95/EC) XP04506 XP4506) 2SD1915 2SD1915F XP04506 XP4506 PDF

    2SD1915F

    Abstract: XP04506 XP4506
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE


    Original     		2002/95/EC) XP04506 XP4506) 2SD1915F XP04506 XP4506 PDF

    2sd1915F

    Contextual Info: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 0.2±0.1 1.25±0.10


    Original     		XP04506 XP4506) 2SD1915F 2sd1915F PDF

    2sd1915F

    Abstract: XP04506 XP4506
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm 0.12+0.05


    Original     		2002/95/EC) XP04506 XP4506) 2sd1915F XP04506 XP4506 PDF

    2sd1915f

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE


    Original     		2002/95/EC) XP04506 XP4506) 2SD1915F 2sd1915f PDF

    2SD1915F

    Abstract: 2SD1915 XP4506 XP04506
    Contextual Info: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage


    Original     		XP04506 XP4506) 2SD1915F 2SD1915F 2SD1915 XP4506 XP04506 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF