2SD1915F Search Results

2SD1915F

Abstract: 2SD1915 XN01504 XN1504
Contextual Info: Composite Transistors XN01504 XN1504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD1915F x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

2sd1915F

Abstract: 2SD1915 vebo 25 XP4506
Contextual Info: Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage

2SD1915

Abstract: 2sd1915F XN04506 XN4506
Contextual Info: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD1915F x 2 elements 0 to 0.1 ● (Ta=25˚C)

2SD1915F

Abstract: Panasonic MARKING 2SD1915 XP01504 XP1504
Contextual Info: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SD1915F x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

2SD1915F

Abstract: 2SD1915 XP4506 XP04506
Contextual Info: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 4 1 0.2±0.1 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package (Emitter-coupled transistors)

2SD1915F

Abstract: XP01504 XP1504 2SD1915
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SD1915F

Abstract: 2SD1915 XN01504 XN1504
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SD1915F

Abstract: 2SD1915 XN04506 XN4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Contextual Info: Composite Transistors XN04506 XN4506 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10

2SD1915F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des

2sd1915F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 1.25±0.10 2.1±0.1

Contextual Info: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half

2SD1915F

Abstract: XP04506 XP4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2sd1915f

Abstract: 2SD1915
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo

2sd1915F

Abstract: XP01504 XP1504 2SD1915
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05

2sd1915F

Abstract: 2SD1915
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name

2SD1915F

Abstract: XP04506 XP4506 2SD1915
Contextual Info: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● ● 4 Features 0.2±0.1 High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 5° ● 0.12+0.05 –0.02 1.25±0.10 2.1±0.1

2sd1915F

Abstract: 2SD1915 XN01504 XN1504
Contextual Info: Composite Transistors XN01504 XN1504 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.

2SD1915

Abstract: 2SD1915F XP04506 XP4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SD1915F

Abstract: XP04506 XP4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE