X1014 Search Results
X1014 Price and Stock
CTS Corporation 746X101473JPRES ARRAY 8 RES 47K OHM 1206 |
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746X101473JP | Cut Tape | 114,849 | 1 |
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746X101473JP | 34,595 | 31 |
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CTS Corporation 746X101471JPRES ARRAY 8 RES 470 OHM 1206 |
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746X101471JP | Digi-Reel | 13,786 | 1 |
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746X101471JP | Reel | 20 Weeks | 10,000 |
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746X101471JP | Reel | 22 Weeks | 10,000 |
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Bourns Inc 4612X-101-472LFRES ARRAY 11 RES 4.7K OHM 12SIP |
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4612X-101-472LF | Bulk | 1,975 | 1 |
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4612X-101-472LF | 16 Weeks | 2,000 |
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4612X-101-472LF |
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Bourns Inc 4614X-101-472LFRES ARRAY 13 RES 4.7K OHM 14SIP |
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4614X-101-472LF | Bulk | 1,952 | 1 |
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4614X-101-472LF | 18 Weeks | 2,000 |
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4614X-101-472LF |
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Bourns Inc 4611X-101-473LFRES ARRAY 10 RES 47K OHM 11SIP |
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4611X-101-473LF | Bulk | 1,854 | 1 |
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4611X-101-473LF | Bulk | 15 Weeks | 2,000 |
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4611X-101-473LF | 16 Weeks | 2,000 |
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4611X-101-473LF |
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X1014 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HX6408Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02) |
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HX6408 5x105rad 1x109 1x101 40-Lead D2888 3Q172S HX6408 | |
Contextual Info: Technical Data June 2011 3M Thermally Conductive Silicone Interface Pad 5515-20 and 5515-25 Product Description 3M™ Thermally Conductive Silicone Interface Pads 5515-20 and 5515-25 are designed to provide a preferential heat transfer path between heat generating components and heat sinks, heat spreaders or other cooling devices. The 3M Pad |
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225-3S-06 | |
XAPP1014
Abstract: smpte 424m to smpte 274m 3G-SDI serializer XAPP224 DATA RECOVERY 425M SMPTE-305M PCIe BT.656 ML571 vhdl code for multiplexing Tables in dvb-t SONY service manual circuits
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XAPP1014 XAPP1014 smpte 424m to smpte 274m 3G-SDI serializer XAPP224 DATA RECOVERY 425M SMPTE-305M PCIe BT.656 ML571 vhdl code for multiplexing Tables in dvb-t SONY service manual circuits | |
optically clear adhesive
Abstract: ecg master replacement guide 1115b silver conductive ink resins QTM-500 MGC 7805 CONDUCTIVE INK FOR FLEX CIRCUITS 3m 7815 8880-S7 UL-746
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225-3S-06 7193HB optically clear adhesive ecg master replacement guide 1115b silver conductive ink resins QTM-500 MGC 7805 CONDUCTIVE INK FOR FLEX CIRCUITS 3m 7815 8880-S7 UL-746 | |
d452a
Abstract: PC28F640P33 sharp 21A U12 circuit diagram HP 30 pin lcd flex cable pinout C117 S4 87A CB-502 sharp CMOS Camera Module CSI 74LVC254 IC SOCKET TSOP48 SMT
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L-700e D-55135 d452a PC28F640P33 sharp 21A U12 circuit diagram HP 30 pin lcd flex cable pinout C117 S4 87A CB-502 sharp CMOS Camera Module CSI 74LVC254 IC SOCKET TSOP48 SMT | |
5962-07A05
Abstract: HX422D MIL-PRF38535 ES1V
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HX422D RS422 20MHz HX422D RS422 22CFR N61-0999-000-000 5962-07A05 MIL-PRF38535 ES1V | |
DIODE 22B4
Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
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BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4 | |
Contextual Info: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V |
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HX422D RS422 20MHz HX422D RS422 22CFR N61-0999-000-000 | |
Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan |
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HXBUSX18 100MHz HXBUSX18 22CFR N61-1002-000-000 | |
Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features n 18 Bit Bidirectional Bus Interface n Rad Hard: 300k Rad Si Total Dose n Single +3.3 V Power Supply n Supports IEEE standard 1149.1-2001 Boundary Scan n Functional as One 18 Bit Transceiver or |
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HXBUSX18 100MHz HXBUSX18 ADS-14205 | |
K3413-03
Abstract: Infrared photodiode preamplifier
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infraK3413-03 K3413-05 K3413-09 KIRDB0058 KIRDB0059EA KIRDB0061ELA KIRDB0062EA K3413-03 Infrared photodiode preamplifier | |
PDU-V114Contextual Info: UV Enhanced Silicon Photodiode PDU-V114 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .168 [4.27] 45° .075 [1.91] Ø.362 [9.19] Ø.357 [9.07] 2X Ø.018 [0.46] ANODE Ø.330 [8.38] Ø.320 [8.13] 63° VIEWING Ø.255 [6.48] ANGLE Ø.245 [6.22] .200 [5.08] |
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PDU-V114 PDU-V114 | |
J248Contextual Info: SFH 204F/FA SIEMENS Silicon PIN Photodiode with DayLight Filter Dimensions in inches mm .100 (2.54) .031 (0.Q) .016(0.4) .024 (0.6) .016(0.4) C h ip position r ♦ L ¡ j J ' /* Surface Not Flat C a th o d e '' .071 (1.8) .047(1.27* h“- .149 (3.8)_ 1.336 Í34) |
OCR Scan |
204F/FA J248 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
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TEC 1240
Abstract: APD, applications, bias supply "bias control" 394-70-74-661 Silicon apd
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B5170-02Contextual Info: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling Ge photodiodes, the dark current can be reduced effec tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength region. |
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avai10 B2614-03 B2614-05 X1014 B5170-02 B5170-05 B5170-02 | |
OSD35-5T
Abstract: LD35-5T centronic osd100 6 QD7-5T OSD50-5T LD20-5T OSD1-5T LD4B5T LD12 LD20
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OCR Scan |
200mA -10mA 436nm MD25-5T MD100-5T 10x10 MD144-5T 12X12 OSD35-5T LD35-5T centronic osd100 6 QD7-5T OSD50-5T LD20-5T OSD1-5T LD4B5T LD12 LD20 | |
hxlvdsr
Abstract: 5962-07A03 MIL-PRF38535 S150
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100MHz 100mV 500mW 100MHz. 22CFR N61-1003-000-000 hxlvdsr 5962-07A03 MIL-PRF38535 S150 | |
MIL-PRF38535Contextual Info: HXLVDSD Quad LVDS Differential Line Driver Radiation Hardened 3.3V SOI CMOS Features • ■ Four Independent Drivers Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Driver Enable Control ■ Tristate Outputs ■ ■ ■ ■ Temperature Range: |
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250mV 100MHz 300mW 100MHz. 22CFR N61-1001-000-000 MIL-PRF38535 | |
Contextual Info: HXLVDSD Quad LVDS Differential Line Driver Radiation Hardened 3.3V SOI CMOS Features ▪ Four Independent Drivers ▪ Rad Hard: 300k Rad Si Total Dose ▪ Single +3.3 V Supply ▪ Common Driver Enable Control ▪ Three-state Outputs ▪ Temperature Range: |
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250mV 100MHz 300mW 100MHz. | |
honeywell SOI CMOSContextual Info: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features PRODUCTION - Release - 21 Jul 2014 03:17:32 MST - Printed on 21 Jul 2014 ▪ Four Independent Receivers ▪ Rad Hard: 300k Rad Si Total Dose ▪ Single +3.3 V Analog Supply |
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HX422R RS422 20Mb/s HX422R ADS-14202 honeywell SOI CMOS | |
HX422R
Abstract: 5962-07A04
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HX422R RS422 TIA/EIA-422-B 20Mb/s HX422R 22CFR N61-1000-000-000 5962-07A04 | |
Contextual Info: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Fabricated on Silicon On Insulator SOI CMOS Technology SOI4 Process (Leff = 0.8 um) Total Dose Hardness ≥ 300k rad (Si) Dose Rate Upset Hardness |
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HMXMUX01 1x109 1x1012 1x1014 120ns HMXMUX01 22CFR N59-0506-000-000 | |
Contextual Info: HXNAND00 Quad 2 Input NAND Features ▪ Radiation Hardened Total Dose: 300krad Si ▪ Supply voltage: 3.3V ▪ Quiescent current: 500 A ▪ Max Prop Delay 6.6nS ▪ Max Rise/Fall Time 4.3nS ▪ Input capacitance 11.5pF max PRODUCTION - Release - 21 Jul 2014 02:49:45 MST - Printed on 21 Jul 2014 |
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HXNAND00 300krad HXNAND00 ADS-14200 |