WDFN8 Search Results

WDFN8

Abstract: marking G3
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8, 3x3, 0.65P CASE 506BC−01 ISSUE A 8 1 DATE 28 MAY 2008 SCALE 2:1 A D L B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8, 1.7x1.35, 0.4P CASE 511BF−01 ISSUE O 8 DATE 21 JUL 2010 1 SCALE 4:1 A B D PIN ONE REFERENCE 2X 0.10 C DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS ÏÏ ÏÏÏ ÎÎ ÏÏÏ ÏÏ ÎÎÎ EXPOSED Cu TOP VIEW A3

esd diode a2

Abstract: NUF4310MNTAG
Contextual Info: NUF4310MN Low Capacitance 4-Line EMI Filter with ESD Protection in WDFN8 Package This device is a 4 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 4.0 GHz. The NUF4310MN has a cut−off frequency of

Contextual Info: NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant

Contextual Info: UM475XX 300mA, Micropower, Dual Channel VLDO Linear Regulator UM475XX TSOT23-6 WDFN8 3.0x3.0 General Description The UM475XX series are dual channel VLDO very low dropout linear regulators designed for low power portable applications. The range of output voltage is from 1.2V to 5.0V while operated

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511AQ−01 ISSUE A DATE 18 MAR 2010 1 SCALE 4:1 D PIN ONE REFERENCE 2X 0.10 C 2X A B DETAIL A E OPTIONAL CONSTRUCTIONS EXPOSED Cu A3 0.05 C MOLD CMPD DETAIL B A 8X DIM A A1 A3 b D E e L L1 ÉÉÉ

microdot

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511AT−01 ISSUE O DATE 26 FEB 2010 SCALE 4:1 D PIN ONE REFERENCE 2X 0.10 C 2X ALTERNATE TERMINAL CONSTRUCTIONS EXPOSED Cu e/2 MOLD CMPD DETAIL B A A1 A3 SIDE VIEW DIM A A1 A3 b D E e L L1 L2

microdot Application Note

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 1.6x1.0, 0.4P CASE 511AF−01 ISSUE O 8 DATE 19 AUG 2008 1 SCALE 4:1 A B D PIN ONE REFERENCE 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL

MO-240

Abstract: 3-3x 40MM 41MM 511AB
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B 1 DATE 20 JAN 2009 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH

33508

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33508 ACCEPTS IDS33508 REV A- 10-2011 SC-8, SC-70-8, US8 PARTIAL LISTING ON SEMI ULLGA8 1.9x1.0,0.5P, WDFN8 2x2,0.5P ANALOG LFCSP-WD CP-8-6 2x2 MM

Contextual Info: NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant

Contextual Info: NTTFS4965NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant

511BE

Abstract: 511BE-01
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 2x2, 0.5P CASE 511BE−01 ISSUE O 1 DATE 21 JUL 2010 SCALE 2:1 A D PIN ONE REFERENCE 2X L B ÎÎÎ ÎÎÎ ÎÎÎ 0.10 C E DETAIL A ALTERNATE CONSTRUCTIONS TOP VIEW ÎÎ ÏÏ ÏÏ EXPOSED Cu A DETAIL B 0.10 C

511BH

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3x3, 0.65P CASE 511BH−01 ISSUE O 1 DATE 21 JUL 2010 SCALE 2:1 A D B L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN

NTTFS4824NTAG

Contextual Info: NTTFS4824N Power MOSFET 30 V, 69 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTTFS4821N Power MOSFET 30 V, 57 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com

Contextual Info: NCP1032 Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for Telecom Systems The NCP1032 is a miniature high−voltage monolithic switching converter with on−chip power switch and startup circuits. It incorporates in a single IC all the active power control logic and

4C06

Contextual Info: NTTFS4C06N Power MOSFET 30 V, 67 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTTFS4824N

Abstract: NTTFS4824NTAG NTTFS4824NTWG
Contextual Info: NTTFS4824N Power MOSFET 30 V, 69 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTTFS4932N

Abstract: NTTFS4932NTAG NTTFS4932NTWG
Contextual Info: NTTFS4932N Power MOSFET 30 V, 79 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4823N

Abstract: NTTFS4823N NTTFS4823NTAG NTTFS4823NTWG
Contextual Info: NTTFS4823N Power MOSFET 30 V, 50 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com

Contextual Info: PCS3P8504A General Purpose Peak EMI Reduction IC Functional Description PCS3P8504A is a versatile, 3.3 V Timing-Safe Peak EMI reduction IC. PCS3P8504A accepts an input clock either from a fundamental Crystal or from an external reference AC or DC coupled

Contextual Info: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product

Contextual Info: RT9012 Preliminary 300mA Dual LDO Regulator with POR General Description Features RT9012 is a dual channel, low noise, and low dropout with the sourcing ability up to 300mA and power-on reset function. The range of output voltage is from 1.2V to 3.6V by operating from 2.5V to 5.5V input.