511AB Search Results

MO-240

Abstract: 3-3x 40MM 41MM 511AB
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B 1 DATE 20 JAN 2009 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH

NTTFS4824NTAG

Contextual Info: NTTFS4824N Power MOSFET 30 V, 69 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTTFS4821N Power MOSFET 30 V, 57 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com

4C06

Contextual Info: NTTFS4C06N Power MOSFET 30 V, 67 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTTFS4824N

Abstract: NTTFS4824NTAG NTTFS4824NTWG
Contextual Info: NTTFS4824N Power MOSFET 30 V, 69 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTTFS4932N

Abstract: NTTFS4932NTAG NTTFS4932NTWG
Contextual Info: NTTFS4932N Power MOSFET 30 V, 79 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4823N

Abstract: NTTFS4823N NTTFS4823NTAG NTTFS4823NTWG
Contextual Info: NTTFS4823N Power MOSFET 30 V, 50 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com

Contextual Info: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product

Contextual Info: NTTFS4C06N Power MOSFET 30 V, 67 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

tl 4941

Abstract: NTTFS4941NTAG 9033s
Contextual Info: NTTFS4941N Power MOSFET 30 V, 46 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NVTFS4824N Power MOSFET 30 V, 4.7 mW, 46 A, Single N−Channel Features • • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NV Prefix for Automotive and Other Applications Requiring

Contextual Info: NVTFS4823N Power MOSFET 30 V, 10.5 mW, 30 A, Single N−Channel Features • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NV Prefix for Automotive and Other Applications Requiring

Contextual Info: NTTFS4932N Power MOSFET 30 V, 79 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N−Channel Features • • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NV Prefix for Automotive and Other Applications Requiring

Contextual Info: NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant

Contextual Info: NVTFS4824N Power MOSFET 30 V, 4.7 mW, 46 A, Single N−Channel Features • • • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS4824NWF − Wettable Flanks Product

Contextual Info: NVTFS5124PL Power MOSFET −60 V, −6 A, 260 mW, Single P−Channel Features • • • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5124PLWF − Wettable Flanks Product

NTTFS4932NTAG

Abstract: NTTFS4932NTWG NTTFS4932N
Contextual Info: NTTFS4932N Power MOSFET 30 V, 79 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTTFS4945N

Abstract: NTTFS4945NTAG NTTFS4945NTWG
Contextual Info: NTTFS4945N Power MOSFET 30 V, 34 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTTFS4800N

Abstract: NTTFS4800NTAG NTTFS4800NTWG
Contextual Info: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NVTFS5124PL

Contextual Info: NVTFS5124PL Power MOSFET −60 V, −6 A, 260 mW, Single P−Channel Features • • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified