VQB 71 Search Results

TAG 600

Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect

BF420

Abstract: BF421 BF422 BF423 T-31-23 BF422 transistor
Contextual Info: BF420 _ JA_ BF422 PHILIP S I N T E R N AT I ONAL SbE ]> • 711DÖEL DDMSlSb 121 H P H I N SILICON EPITAXIAL TRANSISTORS T -3 ^ 2 3 N-P-N transistors in plastic TO-92 envelope primarily intended for class-B video output stages in

491 marking transistor

Abstract: 2SC4317
Contextual Info: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lGH z M A X IM U M RATINGS (Ta = 25°C)

TL 431 SO8

Abstract: 2SD203 SD203DC P3NF
Contextual Info: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R

vqb 71

Abstract: 074I sem 304 SD50G1
Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package

BD131

Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
Contextual Info: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.

D147D

Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC

vqb 71

Contextual Info: M A X IM U M R ATIN G S Symbol Value Unit Collector-Emitter Voltage v CEO 20 Vdc Collector-Base Voltage v CBO 25 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Rating Collector Current — Continuous ic 50 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C

MRF5711LT1

Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as

Contextual Info: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP

BCX70

Abstract: BCX70J
Contextual Info: BCW60 BCX 70 NPN Silicon AF Transistors • • • • • F or AF input stages and d river applications High cu rre n t gain Low c o lle c to r-e m itte r saturation voltage Low noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BCW 61, BCX 71 PNP

Contextual Info: 3GE D rz 7 “ 7# • 7^237 QG3114^ 1 ■ "T*3S-| 5 SGS-THOMSON 5 _Œ Û T O « S _ 2 N 3 0 1 3 S 6 S-THOMSON HIGH SPEED SATURATED SWITCHES D ESCRIPTIO N The 2N3013 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case intended for high

BF926

Abstract: BF926 philips PNP UHF transistor transistor BF926
Contextual Info: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and

Contextual Info: SIEMENS SMBT 5087 PNP Silicon Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz Type Marking Ordering Code Pin Configuration SMBT 5087 s2Q Q68000-A8319

MDA220

Abstract: MOC3030 application notes VQB 28 E MC14404 2N6558 MK1V135 mc145414 2N6558 MOTOROLA mc3417 power supply ctx monitor 762
Contextual Info: MOTOROL A SC {TELECOM}- 01 D e | L3b75S3 00flQM3t. 1 I -r~ v s '" // - ¡ y MC3419-1L TELEPHONE LINE-FEED CIRCUIT . . . designed as the heart of a circuit to provide BORSHT functions for telephone service in Central Office, PABX, and Subscriber Car­ rier equipment. This circuit provides dc power for the telephone

Contextual Info: SILICON NPN EPITAXIAL PLANAR TY P E 2SC4843 Unit in mm V H F -U H F BA N D LO W NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. N F = l.ld B , |S2lel2=15.5dB f=lGHz 2 .1 ± 0.1 □ M A X IM U M RATINGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage

irfs614a

Abstract: MOSFET pA leakage
Contextual Info: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 250V H Lower Rds{on) * ^ •393

3SD21

Abstract: tt 2144 bv ui 302 0220
Contextual Info: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION

Contextual Info: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package M a r k i n g on S O T - 3 6 3 p a c k a g e

d880

Contextual Info: flêD D • fl2 3 S b 0 5 0Q1SQ0& h M S I E G SIEMENS AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^D S o n = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode

KDS 7c

Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
Contextual Info: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode

LSE B10

Abstract: 2267.1 2SB127 22671 2SB12 2SB1271 2SD190
Contextual Info: 2267B Ordering num ber: EN SA W O i I 2SB1271/2SD1907 N0.2267B PNP/NPN Epitaxial Planar Type Silicon Transistors r H i g h -C u r r e n t Sw i t c h i n g A p p l i c a t i o n s Applications . Suitable for relay drivers, high-speed inverters, converters, and other

Contextual Info: UNIVERSAL SEMICONDUCTOR 41E D • T3t.ö341 Q D G O I O S U N IV E R S A L 455 ■ UNV T~3?~OS SD210, SD 211, S D 2 12 SD213, SD 214, S D 215 N-Channel Enhancement-Mode Lateral D-MOS FETs O rd ering Info rm ation O a t* P ro ta o tlv a D loda 1 0 V ,480 20V, 45»

IC marking jw

Abstract: 2SC5097
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le|2= lOdB f=2GHz -fr M A X IM U M RATINGS (Ta = 25°C)