VQB 24 E Search Results

diode 1n4007

Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the

Contextual Info: DLI 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE Multiple Level Sensor Multiple Level Sensor Multiple Level Sensor & Ground Multiple Level Sensor & Ground Dual Level & Ground 1595950000 1565970000 1578550000 1578560000 1578530000 1578540000 1578570000

VQB 24 E

Abstract: VQB 28 E VQb 28 0485400000 vqb 15
Contextual Info: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor

hp 2212

Abstract: 1783550000
Contextual Info: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000

diode 1n4007

Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the

CT1012

Abstract: Sd80-02 TIC 107
Contextual Info: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N

VQB 28 E

Abstract: 1615280000
Contextual Info: Feed Through Terminals VLI 1.5 PE VLI 1.5 •M 't& fr ^ ' ■J\ ^ 'i _ MAK 2.5 J - c>-2 d o - o o ° - o M ultiple Level Sensor M ultiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Version 1_r

vqb 71

Abstract: 074I sem 304 SD50G1
Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package

LL250

Contextual Info: Feed Through Terminals VLI 1.5 V LI 1.5 PE M A K 2 .5 jm t W r ip s Ä 0 — — —0 o -o — °~^r -O Multiple Level Sensor Multiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Available Options Dimensions

bvoe

Abstract: TSC* 7 VQB 28 E
Contextual Info: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

TL 431 SO8

Abstract: 2SD203 SD203DC P3NF
Contextual Info: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R

D147D

Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

E2512

Abstract: vgb 0503 VGB0504MY7 VBO 24 VGB0492MY7 80380 b1912 E2506 vgb 0491 VGB0493MY7
Contextual Info: I X Y S CORP If lE D • 4bflb22b 0QQ07bñ Rectifier Bridges, 1~ i 5 ■ 'T - r s - o c i Typical applications - DC-Power supplies - DC-Supply for electronics and power control systems - Avalanche Types: magnet valves, magnet brakes B 1906 LF B 1912 LF LF

SD224H

Abstract: SOLITRON SD224 XSD224
Contextual Info: SOLITRON DEVICES INC bl DE |fl3fc,flfc,0fi OOOIS 41 a D r- 5/rwri N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET FEATURES • Lateral D-MOS Design ■ Low ON Resistance — 1.1 ohms typ ■ Extremely Low Drive Current ■ Bi-Direction APPLICATIONS ■ Broadband, High-Gain, RF Power Amplifiers

C583

Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 BUZ 355 N channel Enhancement mode Avalanche-rated Pint Type VDS ID ^DS(on) Package BUZ 355 800V 6A 1.50 TO-218AA Pin 2 Pin 3 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP

soro power

Abstract: 2SC3547A
Contextual Info: TOSHIBA 2SC3547A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3547A Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS COMMON COLLECTOR • + 0.5 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C) SYMBOL

3SD21

Abstract: tt 2144 bv ui 302 0220
Contextual Info: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION

TN0106N3

Abstract: TN0106 SD1137BD SD1137 SD1137CHP TN0106ND TN0110 TN0110N3 TN0110ND TO226AA
Contextual Info: T OPAZ S E M I C O N D U C T O R GSE D | TGÖSaab OOQIDME S | T F f5 in = *U £ \ ^ s D ira? , m o im SEMICONDUCTOR_ ;_ TM 0110 N-CHANNEL ENHANCEMENT D-MOS POWER FETs T ' r > '* ’ ORDERING INFORMATION TO -226AA TO -92 Plastic Package Sorted Chips In Watfle Pack

ME4003

Abstract: 2SC3124 12gw
Contextual Info: TOSHIBA 2SC3124 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 24 TV TUNER, VHF OSCILLATOR APPLICATIONS. U n i t in m m + 0 .5 2 .5 -I 1 3 + 0 .2 5 1 .5 - Q .l 5 I1 c5c5 ÈE- +1 -E3 dd +1 oo +l M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC

2SC3474

Contextual Info: TOSHIBA 2SC3474 ? <;r 3 a.7 a. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • High DC Current Gain : hpE = 500 Min. (Iq = 400 mA) • Low Saturation Voltage : V çje (sat) = 0.5 V (Max.) (10 = 300 mA)