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    Toshiba America Electronic Components 2SC3474

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    Toshiba America Electronic Components 2SC3474TE16L

    SILICON NPN EPITAXIAL TYPE TRANSISTOR Small Signal Bipolar Transistor
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    2SC3474 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3474 Toshiba Silicon NPN Transistor Original PDF
    2SC3474 Toshiba NPN Transistor Original PDF
    2SC3474 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC3474 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3474 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3474 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3474 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3474 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3474 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3474 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3474 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3474 Toshiba Silicon NPN transistor for switching applications and solenoid drive applications Scan PDF
    2SC3474 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE Scan PDF
    2SC3474 Toshiba Toshiba Shortform Catalog Scan PDF

    2SC3474 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sc3474

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. &8MAX. FEATURES : . High DC Current: Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0 •5V(Max.) (Ic=300mA) 06±015


    OCR Scan     		2SC3474 400mA) 300mA) 100mA 2sc3474 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC3474 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3474 SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • U n it in mm High DC Current Gain : hpE = 500 Min. (Iç = 400 mA) Low Saturation Voltage : VcE (sat) = 0.5 V (Max.) (Iç = 300 mA)


    OCR Scan     		2SC3474 961001EAA PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    2SC3474

    Abstract: No abstract text available
    Text: 2SC3474 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in a SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. S8MAX. FEATURES : . High DC Current Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0-5V(Max.)(Ic=300mA) Û 9 5M A X .


    OCR Scan     		2SC3474 400mA) 300mA) 2SC3474 PDF

    b0239c

    Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514


    Original     		OT5503 OT5903 2N6409 2S01516 b0239c diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SC3474 Freq85M req85M PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


    Original     		2SC3474 20070701-JA C3474 2SC3474 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


    Original     		2SC3474 C3474 2SC3474 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    2SC3474

    Abstract: 2U211
    Text: TOSHIBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA)


    OCR Scan     		2SC3474 2SC3474 2U211 PDF

    2SC347

    Abstract: 2SC3474
    Text: TO SH IBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA)


    OCR Scan     		2SC3474 2SC347 2SC3474 PDF

    2SC3474

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3474 ? <;r 3 a.7 a. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • High DC Current Gain : hpE = 500 Min. (Iq = 400 mA) • Low Saturation Voltage : V çje (sat) = 0.5 V (Max.) (10 = 300 mA)


    OCR Scan     		2SC3474 2SC3474 PDF

    2SC3474

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA) MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		2SC3474 2SC3474 PDF

    SSG 23 TRANSISTOR

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3474 TOSHIBA TRANSISTOR V SILICON IMPN EPITAXIAL TYPE W • M A■ SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm SOLENOID DRIVE APPLICATIONS. 6.8MAX A 0.6 MAX 5.2 ± 0 .2 _ i • H igh DC C u rre n t G ain : h p ^ —500 (Min.) (I(} = 400mA)


    OCR Scan     		2SC3474 400mA) 95MAX --300mA) SSG 23 TRANSISTOR PDF

    2sd1878

    Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
    Text: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö


    OCR Scan     		2SD2298 2SD2299 2SD2300 2SD2301 2SD2302 2SD2303 2SD2304 2SD2305 2SD2306 2SD2307 2sd1878 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431 PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF