IRC 265
Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the
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MNDP83950B-VQB
VUL160ARB
28x28x3
160LD
M0003282
MNDP83950B-VQB,
IRC 265
DP63950
DP83950BVQB
DP83950BVQB-MPC
T101
T102
T103
T104
T105
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wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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vqb 201
Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
Text: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik
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VQB 28 E
Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
Text: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik
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VQB16/17/18
VQB 28 E
vqb 27
VQB28
Siebensegmentanzeige
VQb 28
VQB 18
VQB16
vqb 27 f
VQB27
VQB18
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2n5551 transistor
Abstract: No abstract text available
Text: TOSHIBA 2N5551 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications 0 45 Features • High Collector Breakdown Voltage jtT 0.35MAX. IB 0 45 I " Vcbo = 180V, VCE0 = 160V • Low Leakage Current I - Iqbo ~ 50nA Max. @ Vqb = 120V
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2N5551
35MAX.
2n5551 transistor
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Untitled
Abstract: No abstract text available
Text: REVISIONS ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. multicomp DCP # REV DOC. NO. SPC— F005 DESCRIPTION 1885 RELEASED DRAWN DATE BYF 02 0 5/0 6
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2N3501
35C0704
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=10ki!, R2=47kii Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23
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47kii)
Q62702-C2263
OT-23
flE35b05
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Untitled
Abstract: No abstract text available
Text: BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R-| = '\0kQ, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183W WMs Q62702-C2276 1= B Package 2= E 3=C SOT-323
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Q62702-C2276
OT-323
Nov-27-1996
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 183W PNP Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 183W W Ms Q62702-C 2276 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO
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Q62702-C
OT-323
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MQ918
Abstract: MD918
Text: MOT OROL A SC XSTRS/R F 4bE b3b?SSM D QQR2fl72 7 «nO Tb ~ 7^¥3iZ S MOTOROLA SEMICONDUCTOR! TECHNICAL DATA h A ä MD918HX, HXV (DUAL) MD918FHXV (DUAL) MHQ918HX, HXV (QUAD) MMCM918HXV (SINGLE) MQ918HXV (QUAD) NPN Silicon Duai/Quad Small-Signal Transistors
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QQR2fl72
MD918HX,
MD918FHXV
MHQ918HX,
MMCM918HXV
MQ918HXV
MD918
b3b72S4
T-43-25
MD918,
MQ918
MD918
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2N930
Abstract: No abstract text available
Text: 3QE ]> 7 t 2 clS37 0 0 3 1 1 0 1 3 SCS-THOMSON ^ D O S ] ll L i ( g lF [ R ] ( Q ) K ! l D Û S S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS D E S C R IP T IO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO -18 metal case, designed for
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2N930
2N930
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Untitled
Abstract: No abstract text available
Text: 3GE D rz 7 “ 7# • 7^237 QG3114^ 1 ■ "T*3S-| 5 SGS-THOMSON 5 _Œ Û T O « S _ 2 N 3 0 1 3 S 6 S-THOMSON HIGH SPEED SATURATED SWITCHES D ESCRIPTIO N The 2N3013 is a silicon planar epitaxial NPN tran sistor in Jedec TO-18 metal case intended for high
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QG3114^
2N3013
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BCI82
Abstract: BC212L BC212L complementary BC182 bc182l BCI82L BC21 BC212 NPN ECB
Text: l/ K U DESCRIPTION The B C 182, B ' i 82L (N PN & BC212, B C 212L (PN P) are complem entary silicon planar epitaxial transistors for use in A F small signal amplifiers and drivers, as well as for low power universal applications. Both types feature good linearity o f D C current gain.
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BC182L
BC212
BC212L
BC182,
BC212,
BC182
BCI82.
BC212.
BCI82
BC212L
BC212L complementary
bc182l
BCI82L
BC21
BC212
NPN ECB
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CT bc182
Abstract: bc212l BC182
Text: CRO D E S C R IP T IO N The B C 182, B ' i 82L (N PN & B C 212, BC 212L (PN P) are complementary silicon planar epitaxial transistors for use in AF small signal am plifiers and drivers, as w ell as for low power universal applications. Both types feature good linearity o f DC current gain.
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BC182
BC182L
BC212
BC212L
BCT82.
10ChnA
200Hz
CT bc182
bc212l
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BC182
Abstract: BC183 BC184 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3
Text: BC182,A,B BC183 BC184 M A X IM U M RA TIN G S S ym b o l R a tin g BC BC BC 182 183 184 U n it C ollector-E m itter Voltage VCEO 50 30 30 Vdc Collector-Base Voltage VCBO 60 45 45 Vdc Em itter-Base Voltage Vebo 6.0 Vdc C ollector Current - Continuous ic 100
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BC183
BC184
O-226AA)
BC182
BC183
BC184
BC182A
BC182
bc183 motorola
BC182A
BC182B
BC237
bc 182
BC183 3
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2n6191
Abstract: No abstract text available
Text: — — U L Ü U M IJ U »„ I . J . l l - L l J i . l_ ü - l lL J . . W W B B g . N _ M M _ _ .L _ ,_ _ l_ L _ l_ l , SOLID STATE DEVICES INC _ . il l , _l _ _ _ > 12E D 1831.1=011 OOGaiSM 0 | r - 3 3 - 17 2N6192 AND 2N6193 5 AMP HIGH SPEED PNP TRANSISTOR
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2N6192
2N6193
2N5338
2N5339
2N6190
2N6191
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1 .2 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code
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900MHz
BFP182R
Q62702-F1601
OT-143R
fl23SbG5
D12nDfc,
fl53Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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900MHz
Q62702-F1501
OT-343
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SD 214DE siliconix
Abstract: SILICONIX SD21
Text: Tem ic SD210DE/214DE Semiconductors N-Channel Lateral DMOS FETs Product Summary P a rt N um ber V BR DS M in (V) V GS (th )M a x (V ) rDS(on) M a x (Q ) Crss M a x (p F ) to N M a x (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 4 5 @ V Cs = 10V
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SD210DE/214DE
SD210DE
SD214DE
S-51850--Rev.
14-Apr-97
D224T2
SD 214DE siliconix
SILICONIX SD21
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA * fT = 7G H z F = 2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1296
OT-23
D1220b7
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491 marking transistor
Abstract: 2SC4317
Text: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lGH z M A X IM U M RATINGS (Ta = 25°C)
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2SC4317
SC-59
MI192
491 marking transistor
2SC4317
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