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    VK200 CHOKE Search Results

    VK200 CHOKE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN4N9D0HD Murata Manufacturing Co Ltd Fixed IND 4.9nH 2600mA POWRTRN Visit Murata Manufacturing Co Ltd

    VK200 CHOKE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TB172

    Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
    Text: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322


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    PDF VK200 19/4B 5600pF 470pF 65/3B 57-1845-24B SM341 TB172 FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b

    MRF156R

    Abstract: MRF156 Arco 469 ceramic capacitor
    Text: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.


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    PDF MRF156/D MRF156 MRF156R MRF156 MRF156/D* MRF156R Arco 469 ceramic capacitor

    VK200

    Abstract: vk200 chokes DIL10 13.56MHZ RFID matching JP2 connector B78108S EVB90121 ISO15693 MLX90121 XC6201
    Text: EVB90121 MLX90121 Evaluation Board Features and Benefits Output power up to 200miliwatts Complies with standard ISO15693 and ISO 14443B protocols Programmable encoder for custom protocol Short to medium reading range applications Matching network optimized for 50 ohm antenna impedance


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    PDF EVB90121 MLX90121 200miliwatts ISO15693 14443B EVB90121 ISO14001 VK200 vk200 chokes DIL10 13.56MHZ RFID matching JP2 connector B78108S XC6201

    MRF148A

    Abstract: mica ssb 2204B J101 VK200 RF TRANSFORMER 2 UH Unelco j101 D1130 UNELCO MICA CAPACITORS DIODE D11 ZENER
    Text: Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.


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    PDF MRF148/D MRF148A MRF148A mica ssb 2204B J101 VK200 RF TRANSFORMER 2 UH Unelco j101 D1130 UNELCO MICA CAPACITORS DIODE D11 ZENER

    RF TRANSFORMER 2 UH

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD


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    PDF MRF148A MRF148A RF TRANSFORMER 2 UH

    vk200

    Abstract: VK200-19/4B M122 SD1433
    Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN


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    PDF SD1433 SD1433 vk200 VK200-19/4B M122

    vk200 choke

    Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140
    Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics


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    PDF MRF140/D MRF140 vk200 choke arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140

    VK200-19/4B

    Abstract: choke vk200 vk200 3M-K-6098 M122 SD1433
    Text: SD1433 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P OUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN


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    PDF SD1433 SD1433 VK200-19/4B choke vk200 vk200 3M-K-6098 M122

    VK200 rfc

    Abstract: vk200 rfc with 6 turns SD1460 vk200 choke vk200 SD1143
    Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION


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    PDF SD1460 SD1143 VK200 rfc vk200 rfc with 6 turns SD1460 vk200 choke vk200

    vk200 rfc with 6 turns

    Abstract: VK200 rfc choke vk200 SD1460 vk200 vk200 choke vk200 rf choke VK200-19/4B vk200 chokes SD1143
    Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P OUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION


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    PDF SD1460 SD1143 vk200 rfc with 6 turns VK200 rfc choke vk200 SD1460 vk200 vk200 choke vk200 rf choke VK200-19/4B vk200 chokes

    mrf150

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


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    PDF MRF150/D MRF150 MRF150/D* mrf150

    VK200-20

    Abstract: VK200-20/4B MRF148 "RF MOSFET" UNELCO UNELCO MICA CAPACITORS VK200 20/4B vk200 choke VK200 FERRITE rf mosfet power amplifier
    Text: MOTOROLA Order this document by MRF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.


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    PDF MRF148/D MRF148 MRF148/D* VK200-20 VK200-20/4B MRF148 "RF MOSFET" UNELCO UNELCO MICA CAPACITORS VK200 20/4B vk200 choke VK200 FERRITE rf mosfet power amplifier

    MRF148A

    Abstract: 2204B J101 VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF148A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF148A N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.


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    PDF MRF148A/D MRF148A MRF148A 2204B J101 VK200 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics


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    PDF MRF140/D MRF140 MRF140/D*

    MRF138

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF138/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF138 N–Channel Enhancement–Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.


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    PDF MRF138/D MRF138 MRF138/D* MRF138

    vk200 rf choke

    Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.


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    PDF MRF156 MRF156R 340G-02, O-264AA) VK200 MRF156120 MRF156R 83-j3 vk200 rf choke VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 Arco 469 ceramic capacitor

    VK200 inductance

    Abstract: 742 wurth 742 794 50 vk200 vk200 chokes 53ri 742 794 05
    Text: Würth Elektronik GmbH & Co. KG Verbindungstechnik Riedenstraße 16 D-74635 Kupferzell Telefon: +49 (0 79 44) 91 93-0 Telefax: (+49) (0 79 44) 91 93-51 WURTH ELEKTRONIK Verbindungstechnik EM V-Kom ponenten Line Chokes WE-ZB Selfs de protection WE-ZB • Broadband screening


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    PDF D-74635 VK200: VK200 inductance 742 wurth 742 794 50 vk200 vk200 chokes 53ri 742 794 05

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •


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    PDF MRF148

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF148 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD


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    PDF MRF148 MRF148

    2N4933

    Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
    Text: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International


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    PDF 2N4932 2N4933 RCA-2N4932* RCA-2N49331 88MHz) 2N4932 2N4933, 24-volt ST-3250. ST-3230. 2N4933 RCA-2N4933 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE

    175mhz

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •


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    PDF MRFT48 175mhz

    vk200 RFC

    Abstract: thomson microwave transistor sd1234
    Text: S~ G S-THOMSON Q4C ° J 7121237 OODOQBI 1 l ~ SOLID STATE MICROWAVE _ T \ 7 * ~ °* L ' : SD1234 THOMSON-CSF COMPONENTS CORPORATION . Montgomeryville, PA 18936 • 215 855-8400 ■ TWX 510-661-7299 . _ UHF C O M M U N I C A T I O N S T R A N S I S T O R


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    PDF SD1234 SD1234 VK200 vk200 RFC thomson microwave transistor

    SD1089

    Abstract: vk 200
    Text: I S G S-TH O M SG N □ SC D I 7 ^ 2 3 ? QODQltiM D T '- M SOLID STATE MICROWAVE SD1089 THOMSON-CSF COMPONENTS CORPORATION Montgomery ville, PA 18936 • 215 362-8500 •TWX 510-661-7299 40 W, 12.5 V, UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1089 is a 12.5 volt epitaxial silicon NPN planar


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    PDF SD1089 SD1089 VK-200 vk 200

    Nippon capacitors

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M RF148/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistor MRF148 N-Channel Enhancement-Mode D esigned for pow er am plifier applications in industrial, com m ercial and amateur radio equipm ent to 175 MHz.


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    PDF RF148/D MRF148 MRF148/D Nippon capacitors