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    VHF 1W TRANSISTOR Search Results

    VHF 1W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    VHF 1W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    rd01mus1 applications

    Abstract: RD01MUS1-101 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 rd01mus1 applications 3M Touch Systems PDF

    2779, transistor

    Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547 PDF

    RD01MUS1-101

    Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems PDF

    2sc1970 transistor

    Abstract: 2SC1970 "RF Power Amplifiers" 2 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN NPN power Transistor DSA0022949 2SC197
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION •High Power Gain: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio


    Original     		2SC1970 175MHz, 175MHz 2sc1970 transistor 2SC1970 "RF Power Amplifiers" 2 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN NPN power Transistor DSA0022949 2SC197 PDF

    5139 mosfet

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION


    Original     		RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 Oct2011 5139 mosfet PDF

    equivalent transistor c 243

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz 48MAX 53MAX equivalent transistor c 243 PDF

    RD01MUS1-101

    Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 RD01MSU1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor PDF

    RD01MUS1-101

    Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 fet 547 2779, transistor RD01MSU1 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION


    Original     		RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 PDF

    RD01MUS2

    Abstract: 627 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz Oct2011 627 DIODE PDF

    RD01MUS2

    Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems PDF

    RD01MUS2

    Abstract: RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m PDF

    3M Touch Systems

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		RD01MUS2 520MHz RD01MUS2 520MHz 3M Touch Systems PDF

    THN5702F

    Abstract: Mhz 434
    Text: THN5702F Semiconductor SiGe NPN Transistor Unit in mm SOT-89 □ Applications - VHF and UHF wide band amplifier 3 □ Features 4 - Medium power 800mW, 1W application - Power gain 2 1 GP = 14 dB at VCE = 3.6 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 4.5 V, f = 460 MHz, PIN = 0 dBm


    Original     		THN5702F OT-89 800mW, 434MHz THN5702F Mhz 434 PDF

    MS1261

    Abstract: vhf 1w transistor
    Text: MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar


    Original     		MS1261 MS1261 250mA vhf 1w transistor PDF

    GP 839 DIODE

    Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 PDF

    MS1261

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING


    Original     		MS1261 MS1261 PDF

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING


    Original     		MS1261 MS1261 De175 PDF

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING


    Original     		MS1261 MS1261 PDF

    GP 809 DIODE

    Abstract: GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE PDF

    NTE488

    Abstract: No abstract text available
    Text: NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz


    Original     		NTE488 NTE488 175MHz PDF

    NTE311

    Abstract: No abstract text available
    Text: NTE311 Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collectore–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V


    Original     		NTE311 400mA 100mA, 20mAQ 200MHz 400MHz NTE311 PDF

    TO-202 transistor NPN

    Abstract: ECG312 ECG311 ECG299 ECG312 transistor ecg32
    Text: PHILIPS E C G INC 17E D Transistors cont'd EGG Type Description and Application • (=1=53=120 0005033 ê ■ (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV q b o BV c e o


    OCR Scan     		ECG289A) ECG290AMCP ECG289A ECG290A ECG290A ECG291 ECG292 ECG292) O-220 AmRF-50F TO-202 transistor NPN ECG312 ECG311 ECG299 ECG312 transistor ecg32 PDF

    ECG299

    Abstract: ecg316 ECG290A ECG291 ECG295 si 220 mh ECG297 ECG318 NPN rf transistor ECG289A
    Text: PHILIPS E C G INC 17E D Transistors cont'd EGG Type ^53=120 0005Ö33 A • "f-2,^11 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV q b o Description and Application ■ PNP-Sî, AF Pwr Amp (Compl to ECG289A) ECG290AMCP Matched Compl Pair-Contains 100


    OCR Scan     		ECG290A ECG290AMCP ECG289A) ECG289A ECG290A ECG291 ECG292) O-220 ECG292 ECG292MCP ECG299 ecg316 ECG295 si 220 mh ECG297 ECG318 NPN rf transistor ECG289A PDF