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    VGS 40V MOSFET Search Results

    VGS 40V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    VGS 40V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MDD1751

    Abstract: 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET
    Text: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 60A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in


    Original     		PDF MDD1751 MDD1751 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET

    MDE1751

    Abstract: trench mosfet
    Text: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ General Description Features The MDE1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in


    Original     		PDF MDE1751 MDE1751 trench mosfet

    6903

    Abstract: MDE1751
    Text: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ Features General Description VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V The MDE1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in


    Original     		PDF MDE1751 MDE1751 6903

    Untitled

    Abstract: No abstract text available
    Text: DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS on max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24m @ VGS = 10V 32m @ VGS = 4.5V 45m @ VGS = -10V 55m @ VGS = -4.5V ID TA = +25°C


    Original     		PDF DMC4029SSD AEC-Q101 DS36350

    Untitled

    Abstract: No abstract text available
    Text: DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS on max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 55mΩ @ VGS = -4.5V ID TA = +25°C


    Original     		PDF DMC4029SSD AEC-Q101 DS36350

    MDI1752

    Abstract: 40V50A 40V, 50A n mosfet 82269
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDI1752 MDI1752­ 40V50A 40V, 50A n mosfet 82269

    MDF1752

    Abstract: 220F
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDF1752 MDF1752­ 220F

    MDE1752

    Abstract: MDE1752R
    Text: N-Channel Trench MOSFET 40V, 66A,8.0mΩ General Description Features The MDE1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDE1752 MDE1752­ MDE1752R

    MDD1752

    Abstract: MDD*1752 trench mosfet MDD1752R MAGNACHIP
    Text: N-Channel Trench MOSFET 40V, 50A,8.0mΩ General Description Features The MDD1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDD1752 MDD1752­ MDD*1752 trench mosfet MDD1752R MAGNACHIP

    MDS5753ERH

    Abstract: No abstract text available
    Text: Dual N-Channel Trench MOSFET, 40V, 6.3A, 27mΩ Features General Description VDS = 40V ID = 6.3A @VGS = 10V RDS ON < 27mΩ @VGS = 10V < 35mΩ @ VGS = 4.5V The MDS5753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high


    Original     		PDF MDS5753E MDS5753E MDS5753ERH

    mdd9754

    Abstract: N-P Channel mosfet MDD-9754
    Text: MDD9754 Product Flyer MagnaChip Imaging Solutions Division Dual Enhancement N-P Channel Trench MOSFET Key Features N-Channel ƒ VDS = 40V ƒ ID=16A VGS=10V ƒ RDS(ON) <27mΩ @ VGS = 10V <35mΩ @ VGS = 4.5V p-channel ƒ VDS = -40V ƒ ID=-12.7A(VGS=10V) ƒ RDS(ON)


    Original     		PDF MDD9754 MDD9754 2008MagnaChip N-P Channel mosfet MDD-9754

    MDS1753

    Abstract: 6903
    Text: N-Channel Trench MOSFET, 40V, 7.9A, 27mΩ Features General Description VDS = 40V ID = 7.9A @VGS = 10V RDS ON < 27mΩ @VGS = 10V < 35mΩ @ VGS = 4.5V The MDS1753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability


    Original     		PDF MDS1753E MDS1753E MDS1753 6903

    MDF3752

    Abstract: MDF3752TH mosfet low vgs
    Text: P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ Features General Description VDS = -40V ID = -36.5A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDF3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


    Original     		PDF MDF3752 MDF3752 MDF3752TH mosfet low vgs

    MDE1752

    Abstract: MDE1752RH
    Text: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability


    Original     		PDF MDE1752 MDE1752­ MDE1752RH

    mdd3752

    Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
    Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


    Original     		PDF MDD3752 MDD3752 MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA

    MDD3754

    Abstract: MDD375 MDD*3754 P-channel Trench MOSFET MDD3754RH 6000P 82269 MDD37
    Text: P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ Features General Description VDS = -40V ID = -24.4A @VGS = -10V RDS ON < 43mΩ @ VGS = -10V < 58mΩ @ VGS = -4.5V The MDD3754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


    Original     		PDF MDD3754 MDD3754 MDD375 MDD*3754 P-channel Trench MOSFET MDD3754RH 6000P 82269 MDD37

    APM4048

    Abstract: APM4048A APM4048AD APM4048ADU4 2l TRANSISTOR SMD MARKING CODE APM4048ADU STD-020C
    Text: APM4048ADU4 Dual Enhancement Mode MOSFET N-and P-Channel Features Pin Description D1 D2 • N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, RDS(ON)=37mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=49mΩ (typ.) @ VGS=-4.5V


    Original     		PDF APM4048ADU4 -40V/-6A, O-252-4 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM4048 APM4048A APM4048AD APM4048ADU4 2l TRANSISTOR SMD MARKING CODE APM4048ADU STD-020C

    APM4048D

    Abstract: apm*4048D APM4048DU4
    Text: APM4048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description D1 D2 N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, RDS(ON)=37mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=49mΩ (typ.) @ VGS=-4.5V


    Original     		PDF APM4048DU4 -40V/-6A, O-252-4 APM4048D apm*4048D APM4048DU4

    MDF1752TH

    Abstract: MDF1752 40V50A
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDF1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability


    Original     		PDF MDF1752 MDF1752­ MDF1752TH 40V50A

    APM4568

    Abstract: APM4568A APM4568AK N-Channel vgs 40V MOSFET pch 1275
    Text: APM4568AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V


    Original     		PDF APM4568AK -40V/-5A, APM4568A MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM4568 APM4568AK N-Channel vgs 40V MOSFET pch 1275

    APM4568

    Abstract: APM4568J apm*4568 36M0 P-Channel MOSFET code L 1A 40v 7.5a P-Channel N-Channel MS-001 STD-020C 40v 7.5a N- and P-Channel
    Text: APM4568J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -40V/-6A, RDS(ON) =36mΩ (typ.) @ VGS =-10V


    Original     		PDF APM4568J -40V/-6A, RSI86-91, ANSI/J-STD-002 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM4568 APM4568J apm*4568 36M0 P-Channel MOSFET code L 1A 40v 7.5a P-Channel N-Channel MS-001 STD-020C 40v 7.5a N- and P-Channel

    APM4568

    Abstract: apm*4568 APM4568K STD-020C
    Text: APM4568K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V


    Original     		PDF APM4568K -40V/-5A, APM4568 apm*4568 APM4568K STD-020C

    MDS1754

    Abstract: trench mosfet mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ Features General Description VDS = 40V ID = 7.6 VGS = 10V RDS(ON) < 29mΩ @VGS = 10V < 37mΩ @ VGS = 4.5V The MDS1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability.


    Original     		PDF MDS1754 MDS1754 trench mosfet mosfet low vgs

    MDS5751

    Abstract: MDS5751RH MagnaChip Semiconductor N-Channel 40V MOSFET 82269
    Text: Dual N-Channel Trench MOSFET, 40V, 5.8A, 31mΩ General Description Features VDS = 40V ID = 5.8A @ VGS =10V RDS ON <31mΩ @ VGS = 10V <45mΩ @ VGS = 4.5V The MDS5751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability


    Original     		PDF MDS5751 MDS5751 MDS5751RH MagnaChip Semiconductor N-Channel 40V MOSFET 82269