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Catalog Datasheet	MFG & Type	Document Tags	PDF
MDS5753ERH Abstract: No abstract text available Text: Dual N-Channel Trench MOSFET, 40V, 6.3A, 27mΩ Features General Description VDS = 40V ID = 6.3A @VGS = 10V RDS ON < 27mΩ @VGS = 10V < 35mΩ @ VGS = 4.5V The MDS5753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high	Original	MDS5753E MDS5753E MDS5753ERH	PDF

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MDS5753ERH

Abstract: No abstract text available
Text: Dual N-Channel Trench MOSFET, 40V, 6.3A, 27mΩ Features General Description VDS = 40V ID = 6.3A @VGS = 10V RDS ON < 27mΩ @VGS = 10V < 35mΩ @ VGS = 4.5V The MDS5753E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high

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