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    MDE1752

    Abstract: MDE1752RH
    Text: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability


    Original     		PDF MDE1752 MDE1752­ MDE1752RH

    MDE1752

    Abstract: MDE1752R MAGNACHIP trench mosfet MDE1752T 40V, 50A n mosfet FEB2008 40V50A TW18
    Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET 40V, 66A, 8.5mΩ General Description Features The MDE1752 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability


    Original     		PDF MDE1752 MDE1752­ MDE1752R MAGNACHIP trench mosfet MDE1752T 40V, 50A n mosfet FEB2008 40V50A TW18

    MDE1752

    Abstract: MDE1752R
    Text: N-Channel Trench MOSFET 40V, 66A,8.0mΩ General Description Features The MDE1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDE1752 MDE1752­ MDE1752R