BCM 4335
Abstract: relay btk 1012 ADP 3208 bcm 3380 btk 1012 1664810000 97ATEX6007X DIN EN 60999-1 HD 11070 moduflex
Text: Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio. As an OEM supplier, the company sets global standards in the
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2N6155
Abstract: BUZ24 4900 SIEMENS BUZ10 buz90 buzh bup 314 BUZ11 F133 251C
Text: - 272 - m % f m * £ fê Ta=25,C Vg s t Vd s or Vd g (V) (V) *± £ V ÎD Pd %i * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) BS1Ü7A MOT N 200 ±20 0.25 0.6 10 15 BS170 MOT N 60 ±20 0.5 0.83 10 15 BSS123 MOT N 100 ±20 0.17 0.55 50 20 BUZ11 MOT
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BSI07A
O-226kk
BS170
O-226AA
BSS123
O-236AA
O-220AB
BUZ171
O-220ftB
irf120
2N6155
BUZ24
4900 SIEMENS
BUZ10
buz90
buzh
bup 314
BUZ11
F133
251C
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1RF530
Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
Text: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40
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Ta-2510)
SD210
TD-12
SD211
SD212
S0213
O-220AB
IRF630
IRF631
1RF530
1RF540
1rf630
RF543
BS107PT
BS250F
TD-12
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IRF224
Abstract: IRF154 N IRF034 IRF035 IRF123 IBF220
Text: - 250 - T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E
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1RF9Z32
O-220AB
1RF48
IRF034
O-204AE
IRF250
IRF252
IRF224
IRF154 N
IRF035
IRF123
IBF220
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irf113
Abstract: IRF224 buz90 buzh F133 IRF035 IRF034 IRF123
Text: - 250 T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E
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1RF9Z32
O-220AB
1RF48
IRF034
O-204AE
IRF250
IRF252
irf113
IRF224
buz90
buzh
F133
IRF035
IRF123
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1RF9620
Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
Text: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542
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-25cC)
IRF9240
IRFS241
25F9542
O-220
IRF9543
IRF961G
IRF9612
1RF9620
1RF9540
1RF9622
IRF9532
IRF9522
IRF9523
IRF9611
IRF9630 samsung
IRF9613
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KMM5324100V
Abstract: No abstract text available
Text: KMM53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100V consist of eight C M O S 4M x 4 bit
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KMM53241OOV/VG/VP
110ns
130ns
150ns
KMM5324100V
24-pin
72-pin
22/iF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung
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M5324000V/VG/VP
KMM5324000V
bitsx32
24-pin
72-pin
110ns
KMM5324000V-7
130ns
KMM5324000V-8
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Untitled
Abstract: No abstract text available
Text: SA MS UN G E L E C T R O N I C S b7E D INC T T b M l H S D D 1 5 2 4 4 b31 • SMÛK ■ KM M53241OOV/VG/VP DRAM MODULES 4 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic
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M53241OOV/VG/VP
KMM5324100V
24-pin
72-pin
22/jF
110ns
KMM5324100V-7
130ns
KMM5324100V-8
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 5 QQ152fit. 0^0 I SMGK KM M53281OOV/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5328100V is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung
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QQ152fit.
M53281OOV/VG/VP
KMM5328100V
24-pin
72-pin
22/xF
KMM5328100V-6
110ns
KMM532810QV-7
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dxo 1100
Abstract: Y312
Text: PRELIMINARY SPECIFICATION KS0642 300/312CH SOURCE DRIVER FOR TFT LCD KS0642 64G/S 300/312CH. TFT LCD SOURCE DRIVER 1997. 7 . 21 SAMSUNG ELECTRONICS CO. LDI-97-P004-R0 97-07-21 ELECTRONICS 1 PRELIMINARY SPECIFICATION KS0642 300/312CH SOURCE DRIVER FOR TFT LCD
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KS0642
300/312CH
64G/S
300/312CH.
LDI-97-P004-R0
KS0642
Page14>
dxo 1100
Y312
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance
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7Tbm42
GD12174
IRF620/621/622/623
IRF620
IRF621
IRF622
IRF623
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF510/511
IRF510
IRF51
IRF513
IRF511
IRF512
G012150
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IRF*125
Abstract: s4c diode IRFR IRFR020 0MFL IRFU025
Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR020/22/24/25 IRFU020/22/24/25 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • □□1232Q 307 ■ SMGK D-PACK L ow e r R d s <o n > Im p ro ve d in du ctive r u g g e d n e s s F a s t s w itc h in g tim e s
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IRFR020/22/24/25
IRFU020/22/24/25
ib4142
IRFR020/U020
IRFR022/U022
IRFR024/U024
IRFR025/U025
IRFR020/012
IRFR024/025
IRFU020/012
IRF*125
s4c diode
IRFR
IRFR020
0MFL
IRFU025
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HMR-11000
Abstract: HMR11000
Text: SAMSUNG ELECTRONICS INC O HARRIS bOE D 7 ^ 4 1 4 5 OGlliaO ^05 HMR-11000 GaAs MMIC Attenuator DC-18 GHz PRODUCT DATA Features Applications * Low VSWR • Gain Control * Ultra Low Power Consumption • Temperature Compensation * Voltage Controlled Impedence
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HMR-11000
DC-18
HMR-11000
HMR11000
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ssh20n50
Abstract: ssm20n45 20N45 2on50 20n50
Text: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A SSM20N50
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SSM20N45/20N50
SSH20N45/20N50
000S3
SSM20N45
SSM20N50
SSM20N50
00GS435
ssh20n50
20N45
2on50
20n50
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IRF530
Abstract: IRF5303 IR IRF532 IRF530 mosfet IRFP130 OF IRF530 irf532 IRF531 reliability irf530 IRFP131
Text: SAMSUNG ELECTRONICS INC b4E P • 7^*4142 00121S7 h37 ■ SMGK N-CHANNEL POWER MOSFETS IRF530/531/532/533 IRFP130/131 /132/133 FEATURES TO-220 • Low er R d s <o n > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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00121S7
IRF530/531/532/533
IRFP130/131
IRF530/IRFP130
IRF531
IRF532/IRFP1
IRF533/IRFP133
O-220
IRFP130/131/132/133
IRF530
IRF5303
IR IRF532
IRF530 mosfet
IRFP130
OF IRF530
irf532
reliability irf530
IRFP131
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IRF440
Abstract: DDD511B DDD5141 IRF44 IRF441 IRF442 IRF443 mosfet 441 7964 mosfet
Text: 7964142 DE I T T b m M E SAMSUNG S E M I C O N D UCTOR 98D IN C D T S f -t3 05139 N-CHANNEL POWER MOSFETS □ □ □ S 1 3 ci 1 IRF440/441/442/443 FEATURES Low RD£i on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times
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S13ci
IRF440/441/442/443
IRF440
IRF441
IRF442
IRF443
DDD511B
DDD5141
IRF44
mosfet 441
7964 mosfet
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure
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IRFZ44/45
IRFZ40/42
QD124SD
IRFZ44
IRFZ40
IRFZ45
GQ12454
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF9Z14/Z15
IRF9Z10/Z12
O-220
IRF9Z10
7Tb4142
00122C
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IRF413
Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
Text: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC
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Ta-2510)
SD210
TD-12
SD211
SD212
S0213
O-220AB
IRF630
IRF631
IRF413
1RF530
IRF449
IRF460
RF543
samsung irf540
1RF540
1RF620
irf362
IRF448
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1rf520
Abstract: 1RF540 1RF620 1RF640 IRF510 RF523 IRF530 IRF532 IRF533 IRF541
Text: - 253 £> tt £ f m * £ V Vd s Vg s € Id Pd Vg s th lo s s I gss or * V dg Hr V) (V) ft eg. t S (Ta=25*0) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Id (mA) (Ta=25T3) lo (o n ) F Ds(on) Vd s = Vg s 14 C is s g fs Coss ft & 11 m Vg s =0
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1RF522
O-220AB
RF523
IRF530
O-220
1RF620
1rf520
1RF540
1RF640
IRF510
IRF532
IRF533
IRF541
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IRF9521
Abstract: f9520 IRF9520 Samsung
Text: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure
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DP12S4Ã
IRF9520/9521/9522/9523
F9520
F9512
F9523
IRF9520
IRF9521
IRF9522
IRF9523
IRF9521
f9520
IRF9520 Samsung
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IRF411
Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
Text: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR
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Ta-25
IRF352
IRF353
IRF360
O-204AE
IRF362
TQ-204AE
IRF421
O-3150
O-204AA
IRF411
IRF449
1RF540
irf413
1RF620
1rf520
irf362
IRF352
IRF353
IRF421
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