VD1A Search Results

S2083

Contextual Info: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V1 VD2a VD2a VD1a VG2a 1 15 GND GND GND RFIN RFOUT GND GND 5 11 10 6 Each device is 100% RF tested to ensure performance compliance. GND VD2b GND VD2b The MAAP-011027 is a 2-stage, 8 W saturated C-band power amplifier in a 5 mm 20 lead PQFN

Contextual Info: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V2 VG2a VD1a VD2a VD2a 18 17 16 1 15 GND GND 2 14 GND RFIN 3 13 RFOUT GND 4 12 GND GND 5 11 GND This power amplifier is ideally suited for Point-toPoint Radios and C-band radar applications. 6 7 8 9 10 VD2b

9701455-S-J1

Abstract: APH184C
Contextual Info: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

30SPA0553

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

P1015-BD

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

XP1006-BD

Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Contextual Info: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

44MPA0478

Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

44 LS 95

Abstract: tx-1g SKY65225-11 SKY65227-11
Contextual Info: DATA SHEET SKY65227-11: WLAN 802.11n Single Band 2.4 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● Description Two full 2.4 GHz transmit/receive chains PCIe, miniPCI, Cardbus and Access Point applications Backward-compatible with 802.11b/g standards

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

PL 15 Z EQUIVALENT

Abstract: capacitor 1c5 10C6 12C4 14TX0614
Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power

MAAP-010171

Abstract: radar amplifier s-band
Contextual Info: MAAP-010171 Amplifier, Power, 8 W 2.5 - 3.5 GHz Rev. V2 Functional Schematic Features •      Linear Gain: 27 dB Saturated Output Power: +39 dBm Pulsed 50 Ω Input / Output Match Lead-Free 5 mm 20-lead PQFN Package Halogen-Free “Green” Mold Compound

lqh3c murata

Abstract: 2SA1362GR 8311 hef serie LP 7510 v020 CD54 MA729 S-8310 S-8311
Contextual Info: Contents Features . 1 A p p lic a tio n s . 1 Block D ia g ra m . 1 Selection Guide . 2 Pin Arrangement

Contextual Info: MAAP-010171 Amplifier, Power, 8 W 2.5 - 3.5 GHz Rev. V2 Functional Schematic Features •      Linear Gain: 27 dB Saturated Output Power: +39 dBm Pulsed 50 Input / Output Match Lead-Free 5 mm 20-lead PQFN Package Halogen-Free “Green” Mold Compound

11c7

Abstract: 10C6 12C4 XU1005-BD R10C6 R11C7
Contextual Info: 10.0-18.0 GHz GaAs MMIC Transmitter U1005-BD March 2007 - Rev 01-Mar-07 Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing

tx-1g

Abstract: RX1g 21 TX1G SKY65225-11 SKY65227-11 SKY65
Contextual Info: DATA SHEET SKY65227-11: WLAN 802.11n Single Band 2.4 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● Description Two full 2.4 GHz transmit/receive chains PCIe, miniPCI, Cardbus and Access Point applications Backward-compatible with 802.11b/g standards

tx-1a

Abstract: PU1A SKY65225-11 SKY65228-11 RX-1a rx1a 4985
Contextual Info: DATA SHEET SKY65228-11: WLAN 802.11n Single Band 4.9–5.85 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● ● Description Single band 4.9–5.85 GHz MIMO architecture Two full 4.9–5.85 GHz transmit/receive chains

P1028

Abstract: 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: XP1026-BD Power Amplifier 27.0-32.0 GHz Rev. V1 Features Chip Device Layout •     Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power

MD8IC970NR1

Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage

ablestick

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0557 May 2005 - Rev 20-May-05 Features Chip Device Layout io n Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883