XP107 Search Results

315 MHz Power Amplifier

Abstract: CC11R CAPACITOR MURATA XP1076-SD
Contextual Info: 700-2300 MHz 31.5 dBm InGaP HBT Power Amplifier XP1076-SD January 2010 - Rev 13-Jan-10 Features 31.5 dBm P1dB 46.5 dBm OIP3 Active Bias Circuit 14.5 dB Gain @ 2GHz 5V Single Positive Voltage Supply RoHS Compliant SOIC-8 General Description The XP1076-SD is a high linearity power amplifier capable of 31.5 dBm

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

AMBA AXI dma controller designer user guide

Abstract: BP132 AMBA AXI to APB BUS Bridge verilog code primecell PL330 AMBA AXI to AHB BUS Bridge verilog code manual de transistors k44 XP35 XP95 axi wrapper AMBA AXI designer user guide
Contextual Info: Application Note 224 Example LogicTile Express 3MG design for a CoreTile Express A9x4. Document number: ARM DAI 0224 Issued: December 2009 Copyright ARM Limited 2009 Application Note 224 Example LogicTile Express 3MG design for a CoreTile Express A9x4 Copyright 2009 ARM Limited. All rights reserved.

tanaka TS3332LD epoxy

Abstract: XP1073-BD P1073-BD ka-band bare
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

tanaka gold wire

Abstract: tanaka au wire DM6030HK tanaka TS3332LD
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka TS3332LD

Abstract: tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

XP1070-BD

Abstract: P1070-BD MMIC 5043 DM6030HK 10W Power Amplifier XP1070 OC 140 germanium transistor
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +38.5 dBm P1dB Compression Point +40.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD March 2009 - Rev 07-Mar-09 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD March 2009 - Rev 07-Mar-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1072-BD

Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

DM6030HK

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD January 2009 - Rev 23-Jan-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1071-BD-EV1

Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD March 2009 - Rev 06-Mar-09 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

XP1072-BD

Abstract: XP1072-BD-000V ID232 DM6030HK 152.01 VD55
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 4W Power Amplifier 22.0 Small Signal Gain +35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Abstract: XP1072-BD
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

xg1015-SE

Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Contextual Info: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com