SMD BR
Abstract: 2sc3438 2sc343 2SA1368 smd b_r
Text: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25
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2SA1368
-100V
-800mA)
500mW
2SC3438
-10mA
-150mA
-15mA
SMD BR
2sc3438
2sc343
2SA1368
smd b_r
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage
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2SA1368
-100V
-800mA)
500mW
2SC3438
-10mA
-150mA
-15mA
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2SA1945
Abstract: marking z*d
Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter
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2SA1945
150MHz
600mA
-100mA
-200mA
-10mA
2SA1945
marking z*d
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Untitled
Abstract: No abstract text available
Text: IC SMD Type Product specification 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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2SA1945
150MHz
600mA
-100mA
-200mA
-10mA
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iC5A
Abstract: BU406 BU408 transistor BU406 250V transistor npn 2a BU406H npn switching transistor Ic 5A
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 400 200 6 7 10 4 60 150 -65~150
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BU406/406H/408
O-220
BU406
BU406H
BU408
iC5A
BU406
BU408
transistor BU406
250V transistor npn 2a
BU406H
npn switching transistor Ic 5A
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5321 Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC
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2N5321
175OC/W
25OCand
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BU109
Abstract: 2150B 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU109 DESCRIPTION •Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage: VCE sat = 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150 V(Min)
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BU109
100mA
BU109
2150B
200v 5a transistor
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FMMT551
Abstract: FMMT451 DSA003698
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT551 ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS 100 - Normalised Gain % - (Volts) -0.8 -0.6 -0.4 -0.2 -0.01 -0.1 -1 -10 COMPLEMENTARY TYPE PARTMARKING DETAIL
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FMMT551
FMMT451
-150mA,
-50mA,
100MHz
FMMT551
FMMT451
DSA003698
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ZTX552
Abstract: ZTX553 ZTX553 equivalent DSA003769
Text: ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt Switching time VCE sat - (Volts)
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ZTX552
ZTX553
IC/10
-150mA,
-50mA,
100MHz
ZTX552
ZTX553
ZTX553 equivalent
DSA003769
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*e13007
Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
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MJE13007
MJE13007
O-220
QW-R203-019
*e13007
bipolar transistor td tr ts tf
equivalent of transistor mje13007
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laser LED
Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF
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ZTX413
20MHz
10KHz
laser LED
ZTX413
AVALANCHE TRANSISTOR
edge emitter LED
LED driver 110V
DSA003766
avalanche mode transistor
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PDF
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TRANSISTOR C 3205
Abstract: 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf
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ZTX576
IC/10
-100mA,
-10mA,
-300mA,
-50mA,
100MHz
TRANSISTOR C 3205
3205 transistor
TRANSISTOR BR C 3205
transistor TD-100
ZTX576
DSA003769
3205 ic
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FMMT494
Abstract: DSA003696
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C B 0.3 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current
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FMMT494
100mA
50age
100ms
250mA,
FMMT494
DSA003696
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PDF
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ZTX549
Abstract: ZTX549A DSA003768
Text: ZTX549 ZTX549A ZTX549 ZTX549A PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL MIN. Transition Frequency fT 100 TYP. MAX. Output Capacitance Cobo pF VCB=-10V, f=1MHz Switching Times ton 300 ns toff
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ZTX549
ZTX549A
-500mA,
-50mA
-100mA,
100MHz
100ms
ZTX549
ZTX549A
DSA003768
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2SD1403
Abstract: No abstract text available
Text: Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers MT-100
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2SD1403
MT-100
16KHz
2SD1403
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FZT755
Abstract: FZT655 DSA003715
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT755 TYPICAL CHARACTERISTICS td tr ts µs VCE=10V ts COMPLEMENTARY TYPE PARTMARKING DETAIL td 0.6 Switching time 0.4 IC/IB =10 V 0.4 0.2 0.01 0.1 ABSOLUTE MAXIMUM RATINGS. 0.2 tr 0.1 0.01 0.1 1 I+ - Collector Current Amps
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OT223
FZT755
IC/10
FZT655
-10mA,
-500mA,
20MHz
FZT755
FZT655
DSA003715
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PDF
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ZTX657
Abstract: ZTX656 DSA003772
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain % 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10
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ZTX656
ZTX657
100mA,
ZTX657
ZTX656
DSA003772
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FZT757
Abstract: FZT657 DSA003716
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current Amps 0.1 1 IC - Collector Current (Amps)
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OT223
FZT757
FZT657
-100mA,
-10mA*
-200V
-10mA,
FZT757
FZT657
DSA003716
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PDF
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BCX33
Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
Text: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT
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OCR Scan
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BC337
BC338
BCX31
OT-25
BCX32
BCX33
BCX34
BFX84
BFX85
h--22->
BCX33
BCX32
BCX34
BFQ36
2N1711 Data Sheet
BC338
BFX85
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PDF
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2SC1048
Abstract: No abstract text available
Text: High Voltage Transistors TYPE NO. CASE POLA RITY MAXIMUM RATINGS VCEO Pi Ic Vcer« ICM* mW (mA) (V) Hfi Vce(«*) C* fT c „ . min max . Ic (mA) VCE (V) mas (V) Ic (mA) min (MHz) mas (MHz) 30 10 10 50 25 10 10 10 20 10 1 0.5 0.5 10 1 30 10 10 50 25 110+
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OCR Scan
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O-92A
O-92B
O-92B
2SC1048
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PDF
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tube az2
Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Text: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)
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OCR Scan
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BSS38
BSW41A
T0-18
BSX19
BSX20
BSX21
BSY95A
h--22->
crt6-25
tube az2
2n2389
2n2906 sis
BSS68
BSW41
2N2369
2N2906 to92
BFX34
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general
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OCR Scan
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BDS643/645/647/649/651
-SOT223
OT223,
BDS644/646/648/650/652.
bbS3T31
0034bt
bbS3T31
0034bl0
DQ34bll
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status P r o d u c t s p e c ific a tio n date of issue A p ril 1 9 9 1 BDS949/9517953/955 NPN silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 NPN silicon epitaxial base transistors in a miniature SMD envelope
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OCR Scan
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BDS949/9517953/955
OT223
OT223)
BDS950/952/954/956.
BDS949/951/953/955
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PDF
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Untitled
Abstract: No abstract text available
Text: BCW71 BCW 72 IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors M arking BCW71 = Kl BCW72 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 « BASE 2= EMITTER 3= COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C
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OCR Scan
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BCW71
BCW72
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PDF
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