UPG105B Search Results

Contextual Info: SEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • H IG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION

IC3208

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿ iP G 1 0 5 B -1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has amplifiers to achieve high linear gain.

Contextual Info: GaAs S-BAND LOW NOISE AMPLIFIER TEST CIRCUIT FEATURES • • • • UPG105B-1 VERY LOW NOISE: NF < 2.2 dB at f = 2.7 to 4.2 GHz HIGH POWER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz HIGH RELIABILITY HERMETIC PACKAGE vdd 1000 pF I \-^ IN 1000 pF UPG1 O DESCRIPTION

ma3560

Abstract: UPG105B
Contextual Info: NEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • HIG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION

prescaler 120 ghz

Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V