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SMC Corporation of America SS5Y3-12PG1-05B-D0 MANIFOLD BASE, 5 STATION, SS5Y3, SY-1 SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SS5Y3-12PG1-05B-D0	Bulk		5 Weeks	1	1 $140.55 10 $140.55 100 $140.55 1000 $140.55 10000 $140.55	Get Quote

Catalog Datasheet	Type	Document Tags	PDF
IC3208 Abstract: P12315EJ2V0DS00 Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT ¿PG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿PG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the	OCR Scan	uPG105B-1 tPG105B-1 /xPG105B-1 IC3208 P12315EJ2V0DS00	PDF
Contextual Info: SEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES PG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • H IG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION	OCR Scan	UPG105B PG105B	PDF
IC3208 Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT PG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿ iP G 1 0 5 B -1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has amplifiers to achieve high linear gain.	OCR Scan	uPG105B-1 PG105B-1 IC3208	PDF
ma3560 Abstract: UPG105B Contextual Info: NEC S-BAND LOW NOISE AMPLIFIER OUTLINE DIMENSIONS FEATURES PG105B Units in mm OUTLINE B06 • VERY LOW NO ISE: NF ^ 2.2 dB at f = 2.7 to 4.2 GHz • HIG H POW ER GAIN: G p = 25 dB at f = 2.7 to 3.4 GHz • H IG H RELIABILITY • HER M ETIC PACKAGE DESCRIPTION	OCR Scan	UPG105B PG105B ma3560 UPG105B	PDF