UNR5227 Search Results
UNR5227 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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UNR5227 |
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Silicon NPN Epitaxial Planar Transistor | Original | |||
UNR5227 |
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NPN Transistor with built-in Resistor | Original |
UNR5227 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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UNR5227Contextual Info: Transistors with built-in Resistor UNR5227 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts. |
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UNR5227 UNR5227 | |
Contextual Info: Transistors with built-in Resistor UNR5227 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts. |
Original |
UNR5227 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 0.2±0.1 2 (0.65) (0.65) (R2) |
Original |
2002/95/EC) UNR5225/5226/5227 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ |
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2002/95/EC) UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 |
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2002/95/EC) UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 | |
UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
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OCR Scan |
UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 | |
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
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OCR Scan |
MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 | |
Contextual Info: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planer transistor 0.425 Unit: mm For muting 0.3+0.1 –0.0 0.15+0.10 –0.05 5° 2.1±0.1 0.2±0.1 2 (0.65) (0.65) 1.3±0.1 (R2) 6.8 kΩ 2.0±0.2 10° 0 to 0.1 (R1) 10 kΩ |
Original |
UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 SJH00043AED | |
equivalent transistor n 4212
Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
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OCR Scan |
UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent | |
ic MARKING FZ
Abstract: UNR5225 UNR5226 UNR5227
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UNR5225/5226/5227 UNR5225 UNR5226 UNR5227 ic MARKING FZ UNR5225 UNR5226 UNR5227 | |
ic MARKING FZ
Abstract: UNR5225 UNR5226 UNR5227
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Original |
2002/95/EC) UNR5225/5226/5227 SC-70 ic MARKING FZ UNR5225 UNR5226 UNR5227 |