UNR5225 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 0.2±0.1 2 (0.65) (0.65) (R2)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type For muting • Package • Code SMini3-G1 • Pin Name 1: Base 2: Emitter 3: Collector M Di ain sc te on na

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) , optimum for the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2

UNR5225

Abstract: UNR5226
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For muting • Package ■ Features ■ Resistance by Part Number (R1)

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Abstract: UNR5225G UNR5226G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Resistance by Part Number • UNR5225G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225, UNR5226 Silicon NPN epitaxial planar type For muting • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) , optimum for the

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Abstract: UNR5225
Contextual Info: Transistors with built-in Resistor UNR5225 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.

Contextual Info: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planer transistor 0.425 Unit: mm For muting 0.3+0.1 –0.0 0.15+0.10 –0.05 5° 2.1±0.1 0.2±0.1 2 (0.65) (0.65) 1.3±0.1 (R2)   6.8 kΩ 2.0±0.2 10° 0 to 0.1 (R1) 10 kΩ

Contextual Info: Transistors with built-in Resistor UNR5225 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.

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Abstract: UNR5225G UNR5226G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Code SMini3-F2 • Pin Name 1: Base 2: Emitter 3: Collector Th an

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Abstract: UNR5225 UNR5226 UNR5227
Contextual Info: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type 0.425 Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 2 0.2±0.1 1 ■ Resistance by Part Number Marking symbol

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Abstract: UNR5225 UNR5226 UNR5227
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 Collector-emitter voltage (Base open)

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the