TYPE OF SRAM Search Results

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

simm 72 pinout

Contextual Info: Product Line of Memory Products Paradigm Asynchronous SRAM Organization Device Type Voltage Pin Count Acess Time ns Packages Available Comments 256K PDM41256 PDM31256 PDM41257 5V 3.3V 5V 8,10,12,15 8,10,12,15,20 10, 12, 15, 20 28 28 24 SO, T (Type I) SO, T (Type I)

S71AL016D02BAWTF0#

Abstract: 2683 S99-50
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA January 04, 2008 Obsolescence Notification No: Subject: 2683 Obsolescence of the SRAM Type 4, 2M SRAM Multi-Chip Packages MCPs products listed below Spansion LLC is announcing the obsolescence SRAM type 4, 2M SRAM, and all valid combinations of

pentium II

Contextual Info: Product Change Notification PROCESS / PRODUCT CHANGE NOTIFICATION Change Notification #: 608 Change Title: Addition of Toshiba as SRAM Supplier for Pentium II Processors Date of PCN Publication: August 3, 1998 Type of Change Notification: Addendum to Previous FYI Notification

SM53A

Abstract: S71PL032J04 S71PL032J04BAI0B S71PL032J04BAW0B S71PL032J04BFI0B S71PL032J04BFW0B TSC056
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 9, 2005 Advanced Change Notification No: Subject: 2560 Obsolescence of S71PL032J04 using SRAM Type 2 Spansion LLC is announcing the obsolescence of the S71PL032J04BAW0B due to the obsolescence of

CBV2

Abstract: HN27C301
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

77106

Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

4-sr-1m

Contextual Info: AMI S FIA IVI A S I S D IV IS IO N 1. APPLICATION This data sheet applies to the conforming product specifications of the 68-pin, two-piece S-RAM card of the JEIDA 4.1 / PCMCIA 2.0 Memory Card Guidelines. 2. FUNDAMENTAL CIRCUITS 2.1 CIRCUIT CONFIGURATION CMOS SRAM + Primary Lithium Battery replaceable + Secondary Battery (fixed type/charging type)

eprom 2904

Abstract: L 4440 72-Pin SO-DIMM
Contextual Info: Line Up of Hitachi IC Memories Classification SRAM- Total bit Organization word X bit Type Page* HM62W8512A Series. HM628512A Series . HM628512 Series.

SD14

Abstract: SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13
Contextual Info: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES „ Access Times of 35ns SRAM and 150ns (EEPROM) „ Access Times of 45ns (SRAM) and 120ns (EEPROM) „ Access Times of 70ns (SRAM) and 300ns (EEPROM) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic

RCM-01

Abstract: RC-M01J-DA
Contextual Info: I I I I II t i l I •P ro d u c t designation • When ordering, specify the type of product. • Verify each code against the coding table shown below. • Any blank should be filled with the next character. Prefix Capacity of memory Physical size_ Type of memory

S1D13501

Abstract: QFP14-80 MASKROM QFP14-80 epson TQFP15-100 S1L50000 S1X55033 S1X55053 S1D13502 S1X55103
Contextual Info: PF1227-01 S1X50000 Series S1X50000 Series High Speed/Low Power Embedded Array ● 1P SRAM/2P SRAM/Mask ROM mounted ● Two types available: High-speed type and the low-power-consumption cell type ● Eight models available with different sizes of SRAM/MaskROM

WSF2816-39G2UX

Abstract: SD10 SD12 SD13 SD14 SD15 WSF2816-39XX
Contextual Info: White Electronic Designs WSF2816-39XX 128KX16 SRAM/512KX16 FLASH MODULE FEATURES „ Access Times of 35ns SRAM and 90ns (FLASH) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 128Kx16 SRAM „ 512Kx16 5V FLASH „ Organized as 128Kx16 of SRAM and 512Kx16 of

HN613256P

Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo­ ries is high speed but small capacity, instead, MOS

TMS320C80

Abstract: TMS320C82
Contextual Info: Implementation of the Vector Maximum Search Benchmark on the TMS320C8x Parallel Processor Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., October 1996 SPRA087 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines

TMS320C8x

Abstract: TMS320C80 TMS320C82 SPRU110A
Contextual Info: Implementation of the Vector Maximum Search Benchmark on the TMS320C8x Parallel Processor Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., October 1996 SPRA087 Book Type Two Lines Volume # Book Type Volume # Book Type Two Lines

TMS320C80

Abstract: TMS320C82
Contextual Info: Implementation of the Vector Maximum Search Benchmark on the TMS320C8x Parallel Processor Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., October 1996 SPRA087 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines

LY62L2568

Contextual Info:  LY62L2568 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.4 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Description Initial Issue Adding PKG type : 32 SOP Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L grade

Contextual Info: LY62L2568 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Description Initial Issue Adding PKG type : 32 SOP Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L grade

27c301

Abstract: HM6788P-25 HM6788
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.

IC61C256AH

Abstract: IC61C256AH-10J IC61C256AH-10N IC61C256AH-10T IC61C256AH-10U IC61C256AH-12J IC61C256AH-12N IC61C256AH-12T
Contextual Info: IC61C256AH Document Title 32K x 8 High Speed SRAM Revision History Revision No History Draft Date 0A 0B 0C 0D Initial Draft Revise typo of tHA on page 7 Add SOP package type Revise typo of sop size at page 2,9 March 23,2001 October 18,2001 February 18,2002

GE SCR Manual

Abstract: A22-10 TMDB HD6437020 HD6437021 HD6477021 SH7000 SH7020 SH7021 10MD
Contextual Info: Super H RISC engine SH7020 and SH7021 HD6437020, HD6477021, HD6437021 Hardware Manual Rick Geimer Hitachi Micro Systems, Incorporated 8/2/96 Introduction The SH7020 and SH7021 are part of a new generation of reduced instruction-set computer-type RISC microcomputers that integrate RISC-type CPUs and the peripheral functions required for

Contextual Info: LY622568 256K X 8 BIT LOW POWER CMOS SRAM Rev. 2.0 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 2.0 Description Initial Issue Revised ISB1/IDR/Test Condition of ICC Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Adding SL Spec.

NEC stacked MCP

Abstract: NEC MCP SRAM FLASH
Contextual Info: MC-2222xx Memory Description Features Stacked Multi-Chip Package with 32 Mb Flash Memory and Low-Power SRAM The MC-2222xx includes 32 Mb of dual-operation flash memory and 4 Mb or 8 Mb of SRAM in a single multi-chip package MCP . Memory Type Flash Memory