TYPE 103 CAPACITOR, 2KV RF Search Results

200B

Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
Contextual Info: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from

d 417 transistor

Contextual Info: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

huang 50v 22uf

Abstract: hec specification SCC2211X102K502T Internal MLCC cracking result serious failure mode 223k x7r 50 snubber 223k C1210X 0402 X7R 100NF 25v capacitor 270pF, 4KV 223K 50V X7R 0805
Contextual Info: Holy Stone Enterprise Co., Ltd. CERAMIC CAPACITOR CATALOGUE 2010/11 www.holystone.com.tw www.holystonecaps.com • Introduction •The Company Holy Stone Enterprise Company Ltd Holy Stone was established in June of 1981 as an agent and distributor of electronic components.

TDK capacitors 4.7uF 0201

Abstract: Electric Double Layer Capacitors, Radial Lead Type f 1.ok MD 250v tdk disc capacitors cc series CAP 4.7uF 10 16V X7R 1206 SOFT TERM
Contextual Info: Ver. A14 – Mar. 2014 TABLE OF CONTENTS 2 Message to Customers 3-4 Product Line Summary 5-6 Catalog Number Description 7 - 24 Series Summary 7 General Voltage 8 Mid Voltage 9 High Voltage 10 High Temperature 11 MEGACAP Type 12 Soft Termination 13 Open Mode

Contextual Info: Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N2200 dielectric with an energy density that exceeds conventional Class I materials. R3L has a predictable negative temperature

marking code r2d

Abstract: 102. 1kv
Contextual Info: Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N2200 dielectric with an energy density that exceeds conventional Class I materials. R3L has a predictable negative temperature coefficient, low loss,

PTFA043002E

Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The

PTFA043002

Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The

po111

Abstract: ELNA capacitor 100 uf 50v transistor a09
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

1 HP SINGLE PHASE induction motor wiring diagram

Abstract: RR2A40HA150 AC53a 2.2 kW motors TRS20R20A RR2A48D550 RR2A40HA400 RR2A48D220 RR2A48LA550 ha 80 Ferraz
Contextual Info: Motor Controllers Industrial, 2-Phase Motor Reversing Type RR2A • Motor reversing for 3-phase induction motors up to 5.5 kW • Rated operational voltage: Up to 480 VACrms • Built-in interlock function • DC or AC control voltage • Built-in voltage transient protection

BCP56

Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

PTFA043002E

Abstract: SCHEMATIC DIAGRAM 3.3kv
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold

1 HP SINGLE PHASE induction motor wiring diagram

Abstract: AC53a RR2A40D150 RR2A48D550 RR2A48D220 5,5 KW asynchronous HP-550 Ferraz Shawmut 4A 14 x 51 mm 5.5KW induction motor TRS20R20A
Contextual Info: Motor Controllers Industrial, 2-Phase Motor Reversing Type RR2A • Motor reversing for 3-phase induction motors up to 5.5 kW • Rated operational voltage: Up to 480 VACrms • Built-in interlock function • DC control voltage • Built-in voltage transient protection

PTFA210601E

Contextual Info: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

BCP56

Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

PTFA240451E

Abstract: 200B BCP56 LM7805
Contextual Info: PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging

capacitor 203 1KV

Abstract: PTFA210601E 200B BCP56 LM7805 infineon gold PD 550 L5
Contextual Info: PTFA210601E Thermally-Enhanced High Power RF LDMOS FET 60 W, 2110 – 2170 MHz Description The PTFA210601E is a thermally-enhanced, 60-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from

Contextual Info: Commercial Chip - C0G 16Vdc to 10kVdc A range of commercial MLC chip capacitors in Ultra stable EIA Class I C0G, or NP0, dielectric. C0G chips are used in precision circuitry requiring Class I stability and exhibit linear temperature coefficient, low loss and stable electrical properties with time,

capacitor 332 10kv

Abstract: marking R2D 224 K capacitor
Contextual Info: Commercial Chip - C0G 16Vdc to 10kVdc Standard EIA case sizes and available C/V values are listed below - special sizes, thicknesses and other voltage ratings are available; please contact the sales office for information. A range of commercial MLC chip capacitors in Ultra stable EIA

Contextual Info: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2420 to 2480 MHz. Thermallyenhanced packaging provides the coolest operation available. Full

ptfa210601ev4

Abstract: 103 1KV CERAMIC CAPACITOR BCP56 LM7805 PTFA210601E PTFA210601F
Contextual Info: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input

LM7805

Abstract: ptfa091201e BCP56 PTFA091201F
Contextual Info: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and

capacitor 472 2kv

Abstract: capacitor 332 10kv
Contextual Info: Commercial Chip - X7R 16Vdc to 10kVdc Standard EIA case sizes and available C/V values are listed below - special sizes, thicknesses and other voltage ratings are available; please contact the sales office for information. A range of commercial MLC chip capacitors in Stable EIA Class

capacitor 104 12KV

Abstract: PTFA240451E LM7805
Contextual Info: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally-matched GOLDMOS FETs intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz.