PTFA211001F Search Results

d 417 transistor

Contextual Info: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

PTFA211001E

Contextual Info: Product Brief PTFA211001E PTFA211001F WCDMA RF Power FET The PTFA211001E and PTFA211001F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211001E and

Contextual Info: Preliminary PTFA211001E PTFA211001F Thermally Enhanced High Power RF LDMOS FETs 100 W, 2110–2170 MHz Description Features The PTFA211001E and PTFA211001F are thermally enhanced an internally matched 100-watt GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally enhanced packaging