TSOP044-P-0400-3
Abstract: TSOP044-P0400
Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 44 PIN PLASTIC To Top / Package Lineup / Package Index FPT-44P-M09 EIAJ code : TSOP044-P-0400-3 44-pin plastic TSOP II Lead pitch 0.80 mm Package width 10.16 mm Lead shape Gullwing Lead bend direction
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Original
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FPT-44P-M09
TSOP044-P-0400-3
44-pin
FPT-44P-M09)
F44014S-1C-2
TSOP044-P-0400-3
TSOP044-P0400
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PDF
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TSOP044-P-0400-1
Abstract: MAX4435
Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 44 PIN PLASTIC To Top / Package Lineup / Package Index FPT-44P-M07 EIAJ code : TSOP044-P-0400-1 44-pin plastic TSOP II Lead pitch 0.80 mm Package width 10.16 mm Lead shape Gullwing Lead bend direction
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Original
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FPT-44P-M07
TSOP044-P-0400-1
44-pin
FPT-44P-M07)
F44016S-1C-2
TSOP044-P-0400-1
MAX4435
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PDF
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package 1218
Abstract: TSOP048-P-1218-1
Text: THIN SMALL OUTLINE L-LEADED PACKAGE 48 PIN PLASTIC FPT-48P-M07 EIAJ code : TSOP048-P-1218-1 Lead pitch 0.50mm Lead shape Gullwing Lead bend direction Normal bend Sealing method Plastic mold 48-pin plastic TSOP I (FPT-48P-M07) 48-pin plastic TSOP (I) (FPT-48P-M07)
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Original
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FPT-48P-M07
TSOP048-P-1218-1
48-pin
FPT-48P-M07)
F48015S-4C-3
package 1218
TSOP048-P-1218-1
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PDF
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1020
Abstract: transistor 1020 TSOP040-P-1020
Text: 40RTSOP TSOP040-P-1020 1 40 0.50 TYP. 10.20 9.80 0.25 0.15 21 20 1.10 0.90 SEE DETAIL 1.19 MAX. 0.49 0.39 DETAIL 0.125 18.60 18.20 19.30 18.70 20.30 19.70 NOTE: Dimensions in mm MAXIMUM LIMIT MINIMUM LIMIT 0.22 0.02 0° - 10° 0.49 0.39 0.18 0.08 40RTSOP
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40RTSOP
TSOP040-P-1020)
1020
transistor 1020
TSOP040-P-1020
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PDF
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TSOP044-P-0400-3
Abstract: No abstract text available
Text: THIN SMALL OUTLINE L-LEADED PACKAGE 44 PIN PLASTIC FPT-44P-M09 EIAJ code : TSOP044-P-0400-3 44-pin plastic TSOP II Lead pitch 0.80mm Package width 10.16mm Lead shape Gullwing Lead bend direction Normal bend Sealing method Plastic mold (FPT-44P-M09) 44-pin plastic TSOP (II)
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Original
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FPT-44P-M09
TSOP044-P-0400-3
44-pin
FPT-44P-M09)
TSOP044-P-0400-3
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PDF
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TSOP048-P-1218-1
Abstract: No abstract text available
Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 48 PIN PLASTIC To Top / Package Lineup / Package Index FPT-48P-M07 EIAJ code : TSOP048-P-1218-1 48-pin plastic TSOP I Lead pitch 0.50 mm Lead shape Gullwing Lead bend direction Normal bend
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Original
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FPT-48P-M07
TSOP048-P-1218-1
48-pin
FPT-48P-M07)
F48015S-4C-3
TSOP048-P-1218-1
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PDF
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TSOP044-P-0400-1
Abstract: MAX4435
Text: THIN SMALL OUTLINE L-LEADED PACKAGE 44 PIN PLASTIC FPT-44P-M07 EIAJ code : TSOP044-P-0400-1 Lead pitch 0.80mm Package width 10.16mm Lead shape Gullwing Lead bend direction Normal bend Sealing method Plastic mold 44-pin plastic TSOP II (FPT-44P-M07) 44-pin plastic TSOP (II)
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Original
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FPT-44P-M07
TSOP044-P-0400-1
44-pin
FPT-44P-M07)
TSOP044-P-0400-1
MAX4435
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PDF
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TSOP044-P-0400-1
Abstract: TSOP04 MAX4435 FPT-44P-M07
Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 44 PIN PLASTIC FPT-44P-M07 EIAJ code : TSOP044-P-0400-1 44-pin plastic TSOP II Lead pitch 0.80 mm Package width 10.16 mm Lead shape Gullwing Lead bend direction Normal bend Sealing method
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Original
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FPT-44P-M07
TSOP044-P-0400-1
44-pin
FPT-44P-M07)
heigh04)
F44016S-1C-2
TSOP044-P-0400-1
TSOP04
MAX4435
FPT-44P-M07
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PDF
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LH28F160BGH-TL
Abstract: LH28F160BG-TL TSOP048-P-1220
Text: LH28F160BG-TL/BGH-TL LH28F160BG-TL/BGH-TL 16 M-bit 1 MB x 16 Smart 3 Flash Memories DESCRIPTION Y R A L FEATURES • Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read • SRAM-compatible write interface
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Original
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LH28F160BG-TL/BGH-TL
60-ball
FBGA060/048-P-0811)
LH28F160BGXX-XTL10
LH28F160BGXX-XTL12
TSOP048-P-1220)
LH28F160BGH-TL
LH28F160BG-TL
TSOP048-P-1220
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PDF
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Untitled
Abstract: No abstract text available
Text: LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL LH28F008SC-T/SCH-T LH28F008SC-TL/SCH-TL 8 M-bit 1 MB x 8 Smart 3 Flash Memories DESCRIPTION The LH28F008SC-T/SCH-T/SC-TL/SCH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a
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Original
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LH28F008SC-T/SCH-T,
LH28F008SC-TL/SCH-TL
LH28F008SC-T/SCH-T
LH28F008SC-T/SCH-T/SC-TL/SCH-TL
downloaded435
TSOP040-P-1020)
OP044-P-0600)
27TYP.
FBGA048-P-0608)
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PDF
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28f040
Abstract: LH28F008SA LH28F040SUTD-Z4
Text: LH28F040SUTD-Z4 FEATURES • 512K x 8 Bit Configuration • 5 V Write/Erase Operation 5 V VPP, 3.3 VCC – VCC for Write/Erase at as low as 2.9 V • Min. 2.7 V Read Capability – 190 ns Maximum Access Time (VCC = 2.7 V) • 2 Banks Enable the Simultaneous
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Original
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LH28F040SUTD-Z4
40-PIN
J63428
SMT96117
28f040
LH28F008SA
LH28F040SUTD-Z4
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PDF
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44-PIN
Abstract: 48-PIN LH5332600
Text: LH5332600 FEATURES • 4,194,304 x 8 bit organization Byte mode: BYTE = VIL 2,097,152 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 100 ns (MAX.) CMOS 32M (4M × 8/2M × 16) MROM PIN CONNECTIONS 44-PIN SOP TOP VIEW NC 1 44 A20 A18 2 43
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LH5332600
44-PIN
D15/A-1
44-pin,
600-mil0
48TSOP
600-mil
48-PIN
LH5332600
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PDF
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LH534B00
Abstract: LH534B00T TSOP040-P-1020
Text: LH534B00 FEATURES CMOS 4M 512K x 8 MROM PIN CONNECTIONS • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O • Three-state outputs
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Original
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LH534B00
40-pin,
40-PIN
40TSOP
TSOP040-P-1020)
LH534B00T
LH534B00
LH534B00T
TSOP040-P-1020
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PDF
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42-PIN
Abstract: 44-PIN 48-PIN 42PIN
Text: CMOS 8M 1M x 8/512K × 16 Mask-Programmable ROM LH538500C FEATURES • 1,048,576 words × 8 bit organization (Byte mode) 524,288 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)
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Original
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8/512K
LH538500C
42-pin,
600-mil
44-pin,
48-pin,
LH538500C
42-PIN
48TSOP
44-PIN
48-PIN
42PIN
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PDF
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48-PIN
Abstract: A10C A12C A15C LH532000B
Text: LH532000B FEATURES CMOS 2M 256K x 8/128K x 16 M ask-Program m able ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VI EW f 1• \ 40 ZI Ag a 7C 2 39 U Ag AgiZ
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OCR Scan
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LH532000B
256Kx8/128KX16)
40-pin,
600-mil
525-mil
48-pin,
12x18
48tsop
48-PIN
A10C
A12C
A15C
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PDF
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LHMN5
Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Text: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word
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OCR Scan
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LH5332600
32M-bit
LH5332600N/T
LHMN56XX/LHMN5FXX)
32\l-bit
304X8
LH5332600N
44-pin
OP044-P-0600)
LH5332600T
LHMN5
48TSOP
LH5332600
LH5332C00D
TSOP048-P-1218
LH5332500
2sj au
LHMV
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PDF
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Untitled
Abstract: No abstract text available
Text: LH53V8000 FEATURES C M O S 8 M 1 M x 8 / 5 1 2 K x 16 3 V - D r iv e M a s k - P r o g r a m m a b le R O M PIN CONNECTIONS • 1,048,576 words x 8 bit organization (Byte mode) 42-PIN DIP TOP VIEW r A-ie C 1« Ai? C 2 524,288 words x 16 bit organization
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OCR Scan
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LH53V8000
42-PIN
48TSOP
48-pin,
42-pin,
600-mil
DIP042-P-0600)
44-pin,
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PDF
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SCH-85
Abstract: LH28F008SC TSOP040-P-1020
Text: SHARP LH28F008SC/SCH, LH28F008SC-L/SCH-L LH28F008SC/SCH LH28F008SC-L/SCH-L 8 M-bit 1 MB x 8 SmartVoltage Flash Memories DESCRIPTION • Enhanced automated suspend options The LH28F008SC/SCH/SC-L7SCH-L flash memories with SmartVoltage technology are high-density, low-
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OCR Scan
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LH28F008SC/SCH,
LH28F008SC-L/SCH-L
LH28F008SC/SCH
LH28F008SC/SCH/SC-L7SCH-L
LH28F008SCH-L.
LH28F008SCXX-85
LH28F008SCXX-12
LH28F008SCXX-L85
SCH-85
LH28F008SC
TSOP040-P-1020
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PDF
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A-1435
Abstract: No abstract text available
Text: • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 (iW (MAX.) • Static operation • Three-state outputs • Low power supply: 2.7 V to 3.6 V
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OCR Scan
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LH53V32500
44-pin,
600-mil
48-pin,
44-PIN
LH53V32500
32M-bit
LHS3V32500
48TSOP
TSOP048-P-1218)
A-1435
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PDF
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Untitled
Abstract: No abstract text available
Text: LH53V16500 FEATURES PIN CONNECTIONS • 2,097,152 words x 8 bit organization Byte mode 1,048,576 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 CMOS 16M (2M x 8/1M x 16)
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OCR Scan
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LH53V16500
44-pin,
600-mil
48-pin,
44-PIN
48TSOP
TSOP048-P-1218)
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PDF
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Untitled
Abstract: No abstract text available
Text: LH28F004SC-L/SCH-L SHARP LH28F004SC-L/SCH-L CONTENTS FEATURES. 75 COMPARISON TAB LE.75 PIN CONNECTIONS. 76
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OCR Scan
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LH28F004SC-L/SCH-L
40-pin
TSOP040-P-1020)
44-pin
OP044-P-0600)
48-ball
FBGA048-P-0608)
TSOP040-P-1014)
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PDF
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ScansU9X24
Abstract: No abstract text available
Text: SHARP LH28F008SC-T/SCH-T, LH28F008SC-TUSCH-TL LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL CONTENTS DESCRIPTION. 245 COMPARISON TABLE. 246
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OCR Scan
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LH28F008SC-T/SCH-T,
LH28F008SC-TL/SCH-TL
40-pin
TSOP040-P-1020)
44-pin
OP044-P-0600)
ScansU9X24
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PDF
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LC124
Abstract: No abstract text available
Text: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ
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OCR Scan
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LH28F004SU-LC
LH28F004SU
-40-pin,
TSOP040-P-1020)
LH28F004SUT-LC15
40-pin
LC124
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PDF
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MN41V17405BTT
Abstract: TSOP050-P MN4SV17160T MN4SV17 MN4SV17160T-A
Text: MOS Memories •Dynamic RAMs # 16M DRAMs 3.3V version Organization (words Xbits) 4M X4 1M X 16 Type No. Access time Cycle time Refresh max (ns) min (ns) (cycles/ms) Maximum Supply Current CBR self Active refresh (mA) (/*A) Package No. Remarks MN41V17400BTT
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OCR Scan
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MN41V17400BTT
MN41V17405BTT
MN41V16160BTT
P026-P-0300B
TSOP026-P-0300B
TSOP050-P-0400A
SOJ042-P-0400
MN41V18160BTT
MN41V16165BSJ
TSOP050-P
MN4SV17160T
MN4SV17
MN4SV17160T-A
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PDF
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