Dense-Pac Microsystems
Abstract: DP3SZ128512X816NY5 DENSE-PAC TSOP 56 Package
Text: 1Meg SRAM/8Meg FLASH, 70 - 100ns, TSOP STACK 30A195-00 A 1 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X816NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X816NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking
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100ns,
30A195-00
DP3SZ128512X816NY5
DP3SZ128512X816NY5
128Kx8
512Kx16
16-Bit
Dense-Pac Microsystems
DENSE-PAC
TSOP 56 Package
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D0000H-DFFFFH
Abstract: No abstract text available
Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of
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30A193-00
DP3SZ128512X16NY5
DP3SZ128512X16NY5
128Kx16
512Kx16
D0000H-DFFFFH
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DP3SZ128512X16NY5
Abstract: SA10 SA11 SA12 SA13 Dense-Pac Microsystems
Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of
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30A193-00
DP3SZ128512X16NY5
DP3SZ128512X16NY5
128Kx16
512Kx16
SA10
SA11
SA12
SA13
Dense-Pac Microsystems
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Untitled
Abstract: No abstract text available
Text: 32Mx4, 50 - 60ns, TSOP Stack 30A221-10 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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32Mx4,
30A221-10
DP3ED32MX4RKY5
DP3ED32MX4RKY5
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30A221-00
Abstract: No abstract text available
Text: 32Mx4, 50 - 60ns, TSOP Stack 30A221-00 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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32Mx4,
30A221-00
DP3ED32MX4RY5
DP3ED32MX4RY5
30A221-00
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Untitled
Abstract: No abstract text available
Text: 512Kx32/256Kx16/128Kx32, 150ns, TSOP STACK 30A229-00 A M-Densus High Density Memory Device 4 Megabit High Speed EEPROM DPE128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DPE128X32Y5 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may
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512Kx32/256Kx16/128Kx32,
150ns,
30A229-00
DPE128X32Y5
DPE128X32Y5
16-bit
32-bit
128-BWDW
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DPSD32MX16WY5
Abstract: 32 megabit 16 bit
Text: 512 Megabit Synchronous DRAM DPSD32MX16WY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are
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DPSD32MX16WY5
DPSD32MX16WY5
30A231-00
32 megabit 16 bit
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Untitled
Abstract: No abstract text available
Text: 184 PIN DDR333 Unbuffered DIMM 1GB With 64Mx4 CL2.5 TS128MLD64V3E Description Placement The TS128MLD64V3E is a 128Mx64bits Double Data Rate SDRAM high density for DDR333.The TS128MLD64V3E consists of 32cs CMOS 64Mx4 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
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DDR333
64Mx4
TS128MLD64V3E
TS128MLD64V3E
128Mx64bits
400mil
184-pin
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Untitled
Abstract: No abstract text available
Text: 16 Megabit 3.3 Volt High Speed SRAM DP3S512X32MKY5 PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The DP3S512X32MKY5 is the 512K x 32 SRAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 512K x 8
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DP3S512X32MKY5
DP3S512X32MKY5
500mV
30A190-14
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DPSD32MX16WY5
Abstract: TSOP 66 Package
Text: 512 Megabit Synchronous DRAM DPSD32MX16WY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are
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DPSD32MX16WY5
DPSD32MX16WY5
30A231-00
TSOP 66 Package
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DPSD64MX8WKY5
Abstract: No abstract text available
Text: 512 Megabit Synchronous DRAM DPSD64MX8WKY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed
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DPSD64MX8WKY5
DPSD64MX8WKY5
Banks226-10
30A226-10
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TSOP 66 Package
Abstract: sdram 4 bank 4096 16
Text: 512 Megabit CMOS DDR SDRAM DPDD128MX4WSAY5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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DPDD128MX4WSAY5
DPDD128MX4WSAY5,
53A001-00
30A235-00
TSOP 66 Package
sdram 4 bank 4096 16
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30a226
Abstract: DPSD32MX8TKY5
Text: 256 Megabit Synchronous DRAM DPSD32MX8TKY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed
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DPSD32MX8TKY5
DPSD32MX8TKY5
30A226-00
30a226
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DRAM 8Mx32 tsop
Abstract: 1431 transistor equivalent Dense-Pac Microsystems Dynamic RAM 8MX32
Text: 8Mx32, 50 - 70ns, TSTACK 30A165-25 A 256 Megabit CMOS DRAM DPnnD8MX32RKY5 PRELIMINARY DESCRIPTION: The DPnnD8MX32RKY5 is the 8 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four
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8Mx32,
30A165-25
DPnnD8MX32RKY5
DPnnD8MX32RKY5
DRAM 8Mx32 tsop
1431 transistor equivalent
Dense-Pac Microsystems
Dynamic RAM
8MX32
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Untitled
Abstract: No abstract text available
Text: 16Mx8, 50 - 60ns, TSOP Stack 30A199-00 B M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED16MX8Rn5 High Density Memory Device PRELIMINARY DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family
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16Mx8,
30A199-00
DP3ED16MX8Rn5
DP3ED16MX8Rn5
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DPSD16ME16TKY5
Abstract: No abstract text available
Text: 256 Megabit Synchronous DRAM DPSD16ME16TKY5 ADVANCED INFORMATION DESCRIPTION: The PL-Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed
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DPSD16ME16TKY5
DPSD16ME16TKY5
53A001-00
30A232-10
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TSOP 56 LAYOUT
Abstract: TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256
Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSAY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 16 Meg x 4 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or
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DPDD16MX8RSAY5
DPDD16MX8RSAY5,
A0-A11
30A223-00
16Mx4
53A001-00
TSOP 56 LAYOUT
TSOP 48 LAYOUT
Dense-Pac Microsystems
dm 0256
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Untitled
Abstract: No abstract text available
Text: 2Mx8/1Mx16/512Kx32, 30A244-00 A 12 - 20ns, Surface Mount 32 Megabit CMOS SRAM DP3S1MX32PY5 ADVANCED INFORMATION PIN-OUT DIAGRAM DESCRIPTION: The DP3S1MX32PY5 is a 1M x 32 SRAM module that utilizes the new and innovative space saving TSOP stacking technology. The module is
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2Mx8/1Mx16/512Kx32,
30A244-00
DP3S1MX32PY5
DP3S1MX32PY5
80-Pin
I/O31
500mV
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Untitled
Abstract: No abstract text available
Text: 4 Meg Based, 10 - 15ns, LP-STACK 30A236-04 A 4 Megabit 3.3 Volt High Speed SRAM DP3S128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DP3S128X32Y5 is the 128K x 32 SRAM module the utilize the new and innovative space saving TSOP stacking technology. The module is
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30A236-04
DP3S128X32Y5
DP3S128X32Y5
500mV
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30A223-00
Abstract: No abstract text available
Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RLAY5 DPDD16MX8RSAY5 ADVANCED INFORMATION DESCRIPTION: The PL-Stack series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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DPDD16MX8RLAY5
DPDD16MX8RSAY5
DPDD16MX8RLAY5/
DPDD16MX8RSAY5,
64Mbit
DPDD16MX8RLAY5/DPDD16MX8RSAY5
53A001-00
30A223-00
30A223-00
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16Mx8 dram EDO
Abstract: code edo DENSE-PAC
Text: 16Mx8 50 - 60ns, TSOP Stack 30A228-10 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED16MX8RKY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family
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16Mx8
30A228-10
DP3ED16MX8RKY5
DP3ED16MX8RKY5
16Mx8 dram EDO
code edo
DENSE-PAC
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTE M S 256 Megabit CMOS DRAM DPnnD8MX32RY5 PRELIMINARY DESCRIPTION: The DPnnD8MX32RY5 is the 8 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 4 Meg
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DPnnD8MX32RY5
DPnnD8MX32RY5
30A165-15
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 16 Megabit CMOS SRAM DPS512X32MXP MICROSYSTEMS PRELIMINARY DESCRIPTION: The DPS512X32MXP is a 68-pin surface mount module consisting of four 512K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4 substrate. The module is available with "J"-Leads.
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DPS512X32MXP
DPS512X32MXP
68-pin
30A201
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTE M S 64 Megabit CMOS DRAM DPnnD2MX32PY5 PRELIMINARY DESCRIPTION: The DPnnD2MX32PY5 is the 2 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 1 Meg x 16
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DPnnD2MX32PY5
DPnnD2MX32PY5
30A164-15
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