DPDD16MX8RSAY5 Search Results

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: FEATURES: • Electrical characteristics meet semiconductor manufacturers’ datasheet • Memory organization: 2 64Mb memory devices. Each device arranged as 16M x 4 bits (4M x 4 bits x 4 banks)

TSOP 56 LAYOUT

Abstract: TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256
Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSAY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 16 Meg x 4 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or

30A223-00

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RLAY5 DPDD16MX8RSAY5 ADVANCED INFORMATION DESCRIPTION: The PL-Stack series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP

TSOP 48 LAYOUT

Abstract: TSOP 66 Package
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 128 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are

Contextual Info: M t n t» DENSE-PAC MICROSYSTEMS Aa a ^ "7\ /H -T > M S M 128 Megabit C M O S D D R S D R A M D PD D 16M X 8RLA Y5 D pd d 16m x s r s a y s High Density Memory Device A D V A N C E D IN F O R M A T IO N DESCRIPTION: T h e /ti-D e m ia series is a family of interchangeable memory devices.