DPDD16M Search Results

Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for

TSOP 48 LAYOUT

Abstract: dp 502 t LP SDRAM tsop 66
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 • Configuration Available: 16 Meg x 16 bit 2 Banks of 4 Meg x 8 bits x 4 • Clock Frequency: 100, 125, 133, 143 MHz • 2.5 Volt DQ Supply • JEDEC Standard SSTL_2 Interface for all Inputs/Outputs

sdram 4 bank 4096 16

Abstract: SDRAM Drawing
Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: FEATURES: • Electrical characteristics meet semiconductor manufacturers’ datasheet • Memory organization: 2 64Mb memory devices. Each device arranged as 16M x 4 bits (4M x 4 bits x 4 banks)

Contextual Info: 128 Megabit CM O S D DR SDRAM DPDD16MX8RLAY5 DPDD16MX8RSW5 DENSE-PAC MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: The PL-Sack 9eries is a family of interchangeable memory devices The 128 Megabit Double Data Rate Synchronous D RAM isa member ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP

UDM-1

Abstract: DPDD16MX32WCD5
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD16MX32WCD5 DQ17 68 DQ18 69 DQ19 70 DQ20 71 DQ21 72 DQ22 73 LDM1 74 The following features are not affected by LP-Stack and are provided as reference only. Refer to memory OEM device specification for details.

ddr 3 tsop

Abstract: TSOP 56 LAYOUT TSOP 66 Package
Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSBY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 8 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or

TSOP 56 LAYOUT

Abstract: TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256
Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSAY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 16 Meg x 4 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or

DDR pinout

Abstract: TSOP 66 Package Dense-Pac Microsystems sdram 4 bank 4096 16 SDRAM Drawing
Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and

Contextual Info: 128 Megabit C M O S D D R SDRAM DPDD16MX8RLBY5 DPDD16MX8RSBY5 DENSE-PAC MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The PL-Sack series is a family of interchangeable memory devices The 128 Megabit Double Data Rate Synchronous D RAM isa member

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The LP-StackTM series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The

30A223-00

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RLAY5 DPDD16MX8RSAY5 ADVANCED INFORMATION DESCRIPTION: The PL-Stack series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP

TSOP 48 LAYOUT

Abstract: TSOP 66 Package
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 128 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 128 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are

LP SDRAM

Abstract: LP SDRAM solution 30A223-10
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: FEATURES: • Electrical characteristics meet semiconductor manufacturers’ datasheet • Memory organization: 2 64Mb memory devices. Each device arranged as 8M x 8 bits (2M x 8 bits x 4 banks)

Contextual Info: DENSE-PAC MICROSYSTEMS Mt n t »a /H-Dênsus dpddigmxsribys D 128 Megabit CM O S D D R SDRAM Aa "7\ ^ High Density Memory Device pd d 16m xsrsbys ADVANCED INFORMATION DESCRIPTION: The/U-'Datitu series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member

Contextual Info: M t n t» DENSE-PAC MICROSYSTEMS Aa a ^ "7\ /H -T > M S M 128 Megabit C M O S D D R S D R A M D PD D 16M X 8RLA Y5 D pd d 16m x s r s a y s High Density Memory Device A D V A N C E D IN F O R M A T IO N DESCRIPTION: T h e /ti-D e m ia series is a family of interchangeable memory devices.