Untitled
Abstract: No abstract text available
Text: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100,120ns Max. • Low Power Dissipation Standby (CMOS) : 3,«W(Typ.) L-Version 1.5/i W(Typ.) LL-Version
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KM68V4000AL/AL-L
120ns
18mW/1
KM68V4000ALG/ALG-L
32-SOP-525
KM68V4000ALT/ALT-L
32-TSOP2-400F
KM68V4000ALR/ALR-L
32-TSOP2-400R
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KM62256C
Abstract: km62256 CCTG
Text: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)
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KM62256C
100ns
110mW
KM62256CLGI/CLGI-L
KM62256CLTGI/CLTGI-L
KM62256CLRGI/CLRGI-L
28-SOP-450
28-TSOP1
KM62256CLI/CLI-L
km62256
CCTG
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PDF
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ae29F2008
Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.
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GLV32
Am27C010
Am27C020
Am27C128
Am27C512
Am27C64
Am27H256
Am27LV010
Am27LV010B
Am27LV020
ae29F2008
ATMEL eeprom 2816A
rom AE29f2008
HN462732G
D27C64
AT27C64
ASD AE29F2008
d27C128
Toshiba tmm24128
HN2764
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TSOP 173 g
Abstract: 5H9602 6c9648 3b1326 5G9551 MIL-M-38535 6F9627 4c19 3C1660 atmel 906
Text: PAGE 1 OF 21 ATMEL COPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C040 CMOS EPROM RELIABILITY DATA* -125°C DYNAMIC OPERATING LIFE TEST -200°C RETENTION BAKE -PROGRAM AND ERASE -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT
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AT-27C040
MIL-M-38535
AT-27C1024
AT-27C512R
AT-27C010
AT-27C040
12C/TSOP/SOIC/PDIP
6D9702
8B9832
TSOP 173 g
5H9602
6c9648
3b1326
5G9551
6F9627
4c19
3C1660
atmel 906
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PDF
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Untitled
Abstract: No abstract text available
Text: j>" î f «SB SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000LP
16MByte
SM51441000LP
16-megabyte
100-pin,
70/80ns
20/16W
70/80ns)
DQ115
DQ116
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PDF
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MSM514800A
Abstract: MSM514800ASL
Text: O K I Semiconductor MSM5 14800 A/ASL 524,288-W ord x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514800A/ASL is a 524,288-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514800A/ ASL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514800A/ASL is
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MSM514800A
MSM514800ASL
MSM514800A/ASL
288-word
MSM514800A/
28-pin
MSM514800ASL
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PDF
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0752B
Abstract: AT27C520 AT27C520-70SC AT27C520-70TC AT27C520-70XC AT27C520-90SC AT27C520-90TC AT27C520-90XC 20PIN 27C520
Text: Features • 8-Bit Multiplexed Addresses/Outputs • Fast Read Access Time - 70 ns • Low Power CMOS Operation • • • • • • • • • – 20 mA max. Active at 5 MHz 20-Lead TSSOP Package 20-Lead SOIC Package 28-Lead TSOP Package 5V ± 10% Supply
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20-Lead
28-Lead
AT27C520
AT27C520
AT27C520-70SC
AT27C520-70TC
AT27C520-70XC
AT27C520-90SC
0752B
AT27C520-70SC
AT27C520-70TC
AT27C520-70XC
AT27C520-90SC
AT27C520-90TC
AT27C520-90XC
20PIN
27C520
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PDF
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MSM5117800A
Abstract: MSM5117800
Text: O K I Semiconductor MSM5 1 17800A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800A achieves high integration, high-speed operation, and low-power
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MSM5117800A
152-Word
MSM5117800A
28-pin
cycles/32
MSM5117800
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PDF
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MICROPROCESSOR Z80
Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
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Z80TM
V20TM,
V20HLTM,
V25TM,
V25HSTM,
V30TM,
V30HLTM,
V33TM,
V33ATM,
V35TM,
MICROPROCESSOR Z80
uPD72020
uPC5102
transistor 2p4m
UPD6487
2SD1557
2SJ 3305
UPD77529
TRANSISTOR SOD MARKING CODE 352A
micro servo 9g tower pro
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PDF
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8
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KM684000A
512Kx8
32-DIP,
32-SOP,
32-TSOP
D23bSfl
7TL4142
0G23bSc
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PDF
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TSOP 173 g
Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8
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KM684000A
512Kx8
32-DIP,
32-SOP,
32-TSOP
71b4142
DD23bST
TSOP 173 g
KM684000ALG-7
4000 CMOS
KM684000ALGI-7L
KM684000ALP-7L
KM684000ALP-5L
KM684000AL
KM684000ALI
KM684000ALI-L
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DTM63618
Abstract: DTM63619 DTM63620 EEPROM14
Text: DTM63620, DTM63619, DTM63618 512MB-64Mx72, 256MB-32Mx72, 128MB-16Mx72, 184-Pin Registered DDR SDRAM DIMM Identification Performance range DTM63620 64Mx72 DTM63619 32Mx72 DTM63618 16Mx72 PC1600 200MHz/CL=2 Features Description Utilizes 100MHz DDR SDRAM Auto & self refresh capability DTM63620 is 8K Ref/64 MS,
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DTM63620,
DTM63619,
DTM63618
512MB-64Mx72,
256MB-32Mx72,
128MB-16Mx72,
184-Pin
DTM63620
64Mx72
DTM63619
DTM63618
EEPROM14
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY» CXK58257ATM/AYM -7 0 U J 8 5 L L /1 0 L L /1 2 L L 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32 ,768 w o rds by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and battery back-up system s w h ich require extremely small package
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CXK58257ATM/AYM
32768-word
CXK58257ATM
8257A
CXK58257ATM
XK58257AYM
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PDF
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Untitled
Abstract: No abstract text available
Text: UG7128D6688LQ Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 16 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES • • • 184-Pin DIMM ABSOLUTE MAXIMUM RATINGS Voltage Relative to GND
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UG7128D6688LQ
184-Pin
400mil
DM1/DQS10
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PDF
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Untitled
Abstract: No abstract text available
Text: H I TA C H I / L O G I C / A R R A Y S / M E M S1E » I MMIhEDa HM514410A Series- OOlfl?!? 3 ^0 • H I T 2 Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory ■ DESCRIPTION HM514410AJ Series The Hitachi HM514410A is a CMOS dynamic RAM organized 1,048,576-word x
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HM514410A
576-Word
HM514410AJ
HM514400A
20-pin
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PDF
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DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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PDF
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AN-450 surface mounting methods
Abstract: PLCC20 SO16W SO20W SO24W SO28W VSO40 VSO56 SMD ic catalogue Packaging trends
Text: Issued July 1995 020-420 Data Pack H An introduction to surface mounting Data Sheet What is surface mounting? What are SMDs? In conventional board assembly technology the component leads are inserted into holes through the PCB and connected to the solder pads by wave soldering
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27C520
Abstract: 0752C-C AT27C520 AT27C520-70SC AT27C520-70SI AT27C520-70TC AT27C520-70TI AT27C520-70XC AT27C520-70XI AT27C520-90SC
Text: Features • 8-Bit Multiplexed Addresses/Outputs • Fast Read Access Time - 70 ns • Low Power CMOS Operation • • • • • • • • • – 20 mA max. Active at 5 MHz 20-Lead TSSOP Package 20-Lead SOIC Package 28-Lead TSOP Package 5V ± 10% Supply
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20-Lead
28-Lead
AT27C520
28-Lead,
20-Lead,
AT27C520
27C520
0752C-C
AT27C520-70SC
AT27C520-70SI
AT27C520-70TC
AT27C520-70TI
AT27C520-70XC
AT27C520-70XI
AT27C520-90SC
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PDF
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Kentron Technologies
Abstract: hynix ddr ram circuit diagram of ddr ram DDR DIMM pinout micron DDR DIMM pinout micron 184 DDR200 DDR266 PC2100
Text: 64M X 72 REGISTERED DDR DIMM DDR SDRAM FEMMA MODULE 512 Mega Byte 64M x 72 DDR SDRAM Low Profile Registered 184 Pin DIMM Preliminary General Description: This memory module is a high performance 512 Megabyte Registered synchronous dynamic RAM module organized as 64M x 72 in a 184-pin Dual In-Line Memory Module (DIMM)
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184-pin
Kentron Technologies
hynix ddr ram
circuit diagram of ddr ram
DDR DIMM pinout micron
DDR DIMM pinout micron 184
DDR200
DDR266
PC2100
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PDF
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Untitled
Abstract: No abstract text available
Text: UGSN7005A8HXF-512 Data sheets can be downloaded at www.unigen.com 512MB 16M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 512MB 200pin DIMM (2PCS 256MB (16M x 144) module kit) PIN ASSIGNMENT (Front View)
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UGSN7005A8HXF-512
2560mil)
512MB
512MB
200pin
256MB
200-Pin
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PDF
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AD411
Abstract: No abstract text available
Text: Features * 8-Bit Multiplexed Addresses/Outputs * Fast Read Access Time - 70 ns * Low Power CMOS Operation - 20 mA max. Active at 5 MHz * 20-Lead TSSOP Package * 20-Lead SOIC Package * 28-Lead TSOP Package * 5V + 10% Supply * High Reliability CMOS Technology
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20-Lead
28-Lead
AT27C520
20-Lead,
AT27C520
AD411
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PDF
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VDDSPD
Abstract: PC200 SL64A6E16M4L-A10DW 100MHz-10ns
Text: SL64A6E16M4L-A10DW 16M X 64 Bits 128MB 200-Pin DDR SDRAM SO-DIMM (PC1600) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A6E16M4L-A10DW is a 16M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SODIMM).
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SL64A6E16M4L-A10DW
128MB)
200-Pin
PC1600)
SL64A6E16M4L-A10DW
PC1600
PC200
100MHz--10ns
cycles/64ms
VDDSPD
100MHz-10ns
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PDF
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VDDSPD
Abstract: PC2100 SL64A8E16M4L-A75DW serial memory spd
Text: SL64A8E16M4L-A75DW 16M X 64 Bits 128MB 200-Pin DDR SDRAM SO-DIMM (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A8E16M4L-A75DW is a 16M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SODIMM).
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SL64A8E16M4L-A75DW
128MB)
200-Pin
PC2100)
SL64A8E16M4L-A75DW
PC2100
PC266A
133MHz--7
cycles/64ms
VDDSPD
serial memory spd
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PDF
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