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    TRANSISTOR ZO 105 Search Results

    TRANSISTOR ZO 105 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ZO 105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5596

    Abstract: motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1033/D SEMICONDUCTOR APPLICATION NOTE AN1033 Match Impedances in Microwave Amplifiers and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.


    Original     		PDF AN1033/D AN1033 2N5596 motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors

    2N5596

    Abstract: motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
    Text: Order this document by AN1033/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1033 MATCH IMPEDANCES IN MICROWAVE AMPLIFIERS and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.


    Original     		PDF AN1033/D AN1033 2N5596 motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors

    6943-3

    Abstract: No abstract text available
    Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


    Original     		PDF OT343 CFH800 Rn/50 6943-3

    transistor Zo 105

    Abstract: 6943-3 55086 HEMT marking P 05973
    Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz


    Original     		PDF OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973

    BCs 43 TRANSISTOR

    Abstract: transistor zo 107 AT-32063 4046 IC opt 1027 8 pin ic 3844 for 5 volts
    Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry


    Original     		PDF AT-32063 5989-2645EN AV02-1456EN BCs 43 TRANSISTOR transistor zo 107 AT-32063 4046 IC opt 1027 8 pin ic 3844 for 5 volts

    AT-32063

    Abstract: AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70
    Text: Agilent AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of


    Original     		PDF AT-32063 5965-8921E 5989-2645EN AT-32063 AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70

    transistor zo 107

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor

    AT-32063

    Abstract: No abstract text available
    Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry


    Original     		PDF AT-32063 5989-2645EN AV02-1456EN AT-32063

    BCs 43 TRANSISTOR

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1
    Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-8921E 5989-2645EN BCs 43 TRANSISTOR AT-32063-BLK AT-32063-TR1

    8 pin ic 3844 for 5 volts

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107

    data sheet 702 TRANSISTOR npn

    Abstract: 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS


    Original     		PDF 2SC4571 data sheet 702 TRANSISTOR npn 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571

    transistor 3506 nec

    Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter
    Text: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		PDF OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor

    transistor zo 107

    Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		PDF OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor

    2SC5246

    Abstract: Hitachi DSA0014 ZO 103 ZO 189 transistor
    Text: 2SC5246 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.6 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5246 2SC5246 Hitachi DSA0014 ZO 103 ZO 189 transistor

    2Sc3355

    Abstract: 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION •Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz


    Original     		PDF 2SC3355 S22e-FREQUENCY S21e-FREQUENCY S12e-FREQUENCY 2Sc3355 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter

    4 pin dual-emitter

    Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587

    4 pin dual-emitter

    Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN

    NEC 2933

    Abstract: 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722
    Text: DATA SHEET SILICON TRANSISTOR 2SC5183R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5183R NEC 2933 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722

    TRANSISTOR marking 489 code

    Abstract: 2SC5218 SC-59A Hitachi DSA0014
    Text: 2SC5218 Silicon NPN Epitaxial Transistor Application MPAK VHF & UHF wide band amplifier Features 3 • High gain bandwidth product fT = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SC5218 SC-59A TRANSISTOR marking 489 code 2SC5218 SC-59A Hitachi DSA0014

    ZO 607 MA

    Abstract: transistor zo 607 ZO 607 transistor transistor ZO 607 MA zo 607 zo 607 MA transistor 2SC4988
    Text: 2SC4988 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire UPAK Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 900 MHz 1 3 2 1. Base 2. Collector 3. Emitter


    Original     		PDF 2SC4988 ZO 607 MA transistor zo 607 ZO 607 transistor transistor ZO 607 MA zo 607 zo 607 MA transistor 2SC4988

    GP 809 DIODE

    Abstract: GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE

    ic CD 4047

    Abstract: NEC D 809 F transistor NEC D 586 2SC5185 2SC5185-T1 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1 .3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		PDF 2SC5185 2SC5185-T1 2SC5185-T2 ic CD 4047 NEC D 809 F transistor NEC D 586 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662

    zo 103 ma

    Abstract: No abstract text available
    Text: HITACHI 2SC5246-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 12 GHz typ. • High gain, low noise figure P G = 16.5 dB typ., NF = 1.6 dB typ. at f = 900 MHz * 1. Emitter


    OCR Scan     		PDF 2SC5246------Silicon ap-171 2SC5246 zo 103 ma