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    TRANSISTOR TS3 Search Results

    TRANSISTOR TS3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TS3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JAPAN transistor

    Abstract: TO263 transistor TS11B to263-7 TS5B TS15B TS7B to-263
    Text: Transistor Outline TO-263 3 Lead Molded TO-263 NS Package Number TS3B 2000 National Semiconductor Corporation MS101190 www.national.com Transistor Outline (TO-263) May 1999 Transistor Outline (TO-263) 5 Lead Molded TO-263 NS Package Number TS5B www.national.com


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    PDF O-263) O-263 MS101190 JAPAN transistor TO263 transistor TS11B to263-7 TS5B TS15B TS7B to-263

    2SB775

    Abstract: 2SB77 2SD895 1116MW
    Text: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3


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    PDF ENN679F 2SB775 2SD895 2SB775/2SD895 2SB775/2SD895] 2SB775 2SB77 2SD895 1116MW

    2SD895

    Abstract: 2SB775 1116MW 6792 transistor 679f
    Text: Ordering number:679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Features Package Dimensions • Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of onepoint fixing type plastic molded package


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    PDF 2SB775 2SD895 2SB775/2SD895 2SB775/2SD895] 2SD895 2SB775 1116MW 6792 transistor 679f

    2sb77

    Abstract: 2SB 545 2SB775 2SD895 2SD 388 A 2sb32
    Text: Ordering number : ENN679F SANYO Semiconductors DATA SHEET 2SB775 / 2SD895 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 85V/6A AF 35W Output Applications Features • Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of one-point fixing type plastic molded package


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    PDF ENN679F 2SB775 2SD895 2SB775 2sb77 2SB 545 2SD895 2SD 388 A 2sb32

    smd transistor x8

    Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
    Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series


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    PDF ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 PBL3717A L6201/2/3 L6204 smd transistor x8 smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100

    Schottky diode TO220 15A 1000V

    Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
    Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series


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    PDF ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 BDX53 BDX54 BDW93 Schottky diode TO220 15A 1000V smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.


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    PDF C3346 MC3346 SO-14) ti3b7253 0GT8252 MC3346 b3b72S3

    FET BFW61

    Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
    Text: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.


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    PDF 7110fl2b BFW61 aTO-72 FET BFW61 BFW61 v511 304 fet transistor N CHANNEL FET BFW61

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    Response AA0482

    Abstract: 49/Response AA0482
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this


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    PDF DSP56303 Response AA0482 49/Response AA0482

    Untitled

    Abstract: No abstract text available
    Text: BPX81 2-10 TRANSISTOR ARRAYS BPX82— 89, 80 SIEMENS SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX81 Dimension “A*. Part No. Min. Max. BPX82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291 (7.4) BPX 84 .377 (9.6) .393 (10) BPX 85


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    PDF BPX81 BPX82â BPX82 GE006367 1000lx, 950nm BPX81-3 BPX81-4 BPX81-2

    Untitled

    Abstract: No abstract text available
    Text: FF 90 R 17 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1700 V c es Therm ische Eigenschaften Thermal properties 0,055 °C/W DC, pro Baustein / per module R th J C 0,110 ° c / w DC, pro Zweig / per arm


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    PDF 3403ET7

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP180 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 1 80 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLP180 is a small outline coupler, suitable for surface mount assembly. TLP180 consist of a photo transistor, optically coupled to a gallium


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    PDF TLP180 TLP180 UL1577, E67349 961001EBC2

    interruptor

    Abstract: BSP92 PH* SOT223 transistor
    Text: bb53TE4 □□70010 TS3 Philips Sem iconductors P-channel enhancement mode vertical D-MOS transistor IS IC 3 Product specification BSP92 _NAPC/PHILIPS semiconp b3E D FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 O R DATA SHEET FEATURES Q UICK REFERENCE DATA


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    PDF bb53TE4 OT223 telephonT223) interruptor BSP92 PH* SOT223 transistor

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


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    PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor

    2SA1396

    Abstract: 2SC3568 T108 TS33
    Text: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS


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    PDF 2SA1396 2SA1396 2SC3568 fifO988 2SC3568 T108 TS33

    LB 122 transistor

    Abstract: 2N2222AUA
    Text: 61084 ms- 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed


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    PDF 2N2222AUA MIL-S-19500 100MHz 100kHz 150mA, 300ns, LB 122 transistor

    T17 TRANSISTOR

    Abstract: RN2731B110W
    Text: Philips Semiconductors Objective specification NPN Silicon planar epitaxial RN2731B110W microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 is pulse width, 10% duty factor • Diffused emitter ballasting resistors


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    PDF RN2731B110W 10Ojxs; 7110flPb T17 TRANSISTOR RN2731B110W

    NDB7051

    Abstract: NDP7051
    Text: M ay 1996 National Semiconductor " NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    PDF NDP7051 NDB7051 bSQ113Ã NDB7051

    Untitled

    Abstract: No abstract text available
    Text: 61084 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed


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    PDF 2N2222AUA MIL-S-19500 2N2222AUA 100MHz 100kHz 100kHz 150mA, 300ns,

    TRANSISTOR b1181

    Abstract: 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML
    Text: SANYO SEMICONDUCTOR 1EE D | CORP 7T17Q7t. GQOSIBD •T-S3-U 2SD1649 - NPN Triple Diffused Planar S ilicon Transistor 2039 Color TV Horizontal Deflection Output Applicationsfwith Damper Diode 1755B Applications . High-voltage, power switching Features . Fast speed tfmax=0.4us).


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    PDF 2SD1649 QD513Q 1755B B1181 B1252 TRANSISTOR b1181 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    Visil

    Abstract: 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L
    Text: b5E D PHILIPS INTERNATIONAL m 7110aEb DQfc.37^1 405 « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected loaic level power MOSFET in a 3 pin plastic


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    PDF BUK101-50DL Iisc/Iisq25 sl25-C Visil 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L