TRANSISTOR T 270 Search Results

TRANSISTOR T 270 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR T 270 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
transistor NEC D 586 Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise	OCR Scan	2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500	PDF
vp 3082 Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082 Contextual Info: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,	OCR Scan		PDF
BUK657-450B Abstract: T0220AB Contextual Info: N AMER PHILIPS/DISCRETE SSE D • 1^53=131 002070S t> PowerMOS transistor Fast Recovery Diode FET m BUK657-450B T -S T -IS GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery	OCR Scan	BUK657-450B BUK657-450B T0220AB	PDF
Y parameters of transistors at41533 Contextual Info: What HEWLETT* m iltm PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data A T -4 1 5 1 1 A T -4 1 5 3 3 F e a tu re s • General Purpose NPN Bipolar Transistor • 900 MHz Performance: A T -41511: 1 dBNF, 15.5 dBGA A T -41533: 1 dBNF, 14.5 dBGA	OCR Scan	OT-23 OT-143 sAT-41511 AT-41533 OT-23, AT-415 OT-143. Y parameters of transistors at41533	PDF
1902 transistor Abstract: 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1 Contextual Info: Tr 2SE ROHM CORP » T flS Ö T n OOGE^m Transistors#,*- T-Sl-Wo • Transistor Unit Composite Transistor • For Emitter Followers Resistance value Ri R2 Ra (kfi) (Mi) (Ml) 47 47 1.5 Type FMU1 Dimensions (Unit: mm), Vcc (V) Pd (mW) 15 200 Equivalent Integrated Circuits	OCR Scan	RU101K 1902 transistor 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1	PDF
2SA812 Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.	OCR Scan	2SA812 2SC1623 IEI-1209) 2SA812	PDF
C945C Contextual Info: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high	OCR Scan	AT-32063 OT-363 SC-70) AT-32063 OT-363 C945C	PDF
BUK657-500C Contextual Info: bbS3T31 0030710 T • 5SE D N AUER PHILIPS/DISCRETE PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C T -3 < M 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	bbS3T31 BUK657-500A BUK657-500B BUK657-500C BUK657 -500A 9/76m BUK657-500C	PDF
Transistor 5331 Abstract: BUK657-450B T0220AB Trt-100 transistor ZA 16 Contextual Info: N AMER PH ILI PS/D IS CR ET E SSE D • 1^53=131 002070S t> PowerMOS transistor Fast Recovery Diode FET m BUK657-450B T -S T -IS GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery	OCR Scan	Q02070S BUK657-450B Transistor 5331 T0220AB Trt-100 transistor ZA 16	PDF
Contextual Info: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	BLV11	PDF
2N6519 Abstract: 2N6520 Contextual Info: SAMSUNG S EM IC O N D U C T OR INC 2N6519 14E D \| 711,4142 0007111 7 \| PNP EPITAXIAL SILICO N TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta-25°C Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage	OCR Scan	2N6519 Ta-25Â 2N6520 T-29-21 100fiA, -20mA, -10mA, -30mA, 100mA	PDF

2SD1312 Abstract: w18 transistor Contextual Info: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 79 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o	OCR Scan	2SD1312 SB984Â PWS10 cycleg50 io--00 2SD1312 w18 transistor	PDF
BUK426-50A Abstract: BUK426-50B JYp sot Contextual Info: N AMER P H I L I P S / D I S C R E T E t. 3 5 3 ^ 3 1 ESE D QQE0 2 4 0 T BUK426-50A BUK426-50B PowerMOS transistor r ~ 3*7-1/ QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.	OCR Scan	0G202M0 BUK426-50A BUK426-50B BUK426 BUK426-50B JYp sot	PDF
TRANSISTOR A3 Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10 Contextual Info: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial	OCR Scan	bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10	PDF
BF324 Abstract: BF324 philips transistor BF324 Contextual Info: BF324 r -ILips i n t e r n a t i o n a l SbE » 711G ö2b DO MElMb 2ÖS • P H I N T"3l-{7 H,F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended for r.f. stages in f.m. front-ends in common base configuration.	OCR Scan	BF324 BF324 philips transistor BF324	PDF
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbSHTBl 002QS4S T ■ PowerMOS transistor BUK457-400A BUK457-400B T -3 7 -1 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	002QS4S BUK457-400A BUK457-400B BUK457 -400A -400B	PDF
transistor c 1974 Contextual Info: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.	OCR Scan	001370a BLW60 0D13720 transistor c 1974	PDF
Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz	OCR Scan	AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 5963-1862E 5965-1401E	PDF
BUK456 Abstract: BUK456-60A BUK456-60B T0220AB Contextual Info: PHILIPS INTERNATIONAL bSE T> B 7 1 1 D 5 2 b D D b m O t i 267 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK456-60A/B T0220AB BUK456 BUK456-SQA/B BUK456-60A BUK456-60B	PDF
BUZ15 Abstract: transistor buz IEC134 t03 package transistor pin dimensions Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ15 ObE t • btS3131 0 0 m S S 4 1 T '3 f'/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ15 bt53i3i La-11 bb53131 t-39-13 BUZ15 transistor buz IEC134 t03 package transistor pin dimensions	PDF
Contextual Info: S A M S U N G SEM IC O ND UC TOR INC MMBA811C5 IME D \| T'Jfc.MlMa 0007228 T \| PNP EPITAXIAL SILICON TRANSISTOR T - a q - Ie! DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic CoBector-Base Voltage CoNector-Emitter Voltage Emitter-Base Voltage	OCR Scan	MMBA811C5 OT-23 MMBT5086	PDF

TRANSISTOR T 270 Search Results

TRANSISTOR T 270 Result Highlights (5)

TRANSISTOR T 270 Datasheets Context Search

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

transistor NEC D 586

vp 3082

BUK657-450B

Y parameters of transistors at41533

1902 transistor

2SA812

C945C

BUK657-500C

Transistor 5331

2N6519

2SD1312

BUK426-50A

TRANSISTOR A3

BF324

transistor c 1974

BUK456

BUZ15