FMU1 Search Results

1902 transistor

Abstract: 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1
Contextual Info: Tr 2SE ROHM CORP » T flS Ö T n OOGE^m Transistors#,*- T-Sl-Wo • Transistor Unit Composite Transistor • For Emitter Followers Resistance value Ri R2 Ra (kfi) (Mi) (Ml) 47 47 1.5 Type FMU1 Dimensions (Unit: mm), Vcc (V) Pd (mW) 15 200 Equivalent Integrated Circuits

AS01

Abstract: AU01 AU02 ES01 EU01 EU02 FMU-14S FMU-24S FMU-34S 200ru
Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20 20 0.2 54 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

FMU-12S

Abstract: FMU-14S FMU-16S FMU-21S FMU-22S FMU-24S FMU-26S FMU-32S FMU-34S FMU-36S
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. FMU-12S, R FMU-14S, R FMU-16S, R FMU-21S, R FMU-22S, R FMU-24S, R FMU-26S, R FMU-32S, R FMU-34S, R FMU-36S, R Tj (°C) VF (V) Tstg (°C)

CTB34M

Abstract: fmlg12 CTB-34M marking RBV Marking code 6H SSB14 RK44 marking A63 SFPB-64 MARKING band color code
Contextual Info: Marking Guide 6 TO3P Type • 1 Small TMD ■ M A ① 9 D ④ ② ③ ①Type No. abbreviation The AM01 Type No. is indicated as “M.” ②Class Z: 200V None: 400V A: 600V B: 800V C: 1000V ③Manufacturing date First character: Year (Last digit of year)

Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20 20 0.2 55 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

fml 22r

Abstract: diode ry24 RY24 35
Contextual Info: SANKEN ELECTRIC CO LTD SSE D • 7 ^ Q 7 H 1 GOOlObl T4T « S A K J 7-. 0 3 - / 1 ■ ■ Fast recovery diodes > M axim um ratings T yp e N o, , V rm* " in ' ' Tstg 400 02A 600 2 400 600 RU2M 400 1.0 1.1 3A RU3M 3AM RU4Z 15 20 600 400 RU3 15 1 : -40+140 1.4

Ao6100

Contextual Info: SAN KEN E L E C T R IC CO L T » 35 E Ultra Fast Recovery Diodes 1 H h T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Vrm: 70~1000V B io :0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL Rating/ Characteristics Absolute Maximum Ratings V rsm V) V rm (V) If s M

FMUG16

Abstract: FMQG5FM fmqg2f fmqg5g
Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

AS01Z

Abstract: AU01Z AU02Z ES01Z EU01Z EU02Z FMU-12S FMU-22S FMU-32S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot t rr 1 (µs) VR = VRM VR = VRM Ta (°C) max max IF / I FP (mA) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) 15 –40 to +150 2.5 0.25 10 150 100

CTU12S

Abstract: CTU-12S CTU-22U FMU-22S FMU-34S FMU36S equivalent FMU+100 CTU22S fmu36s FMU-12S
Contextual Info: j SANKEN E L E C T R I C CO LTD m 3SE ,3> ; . Fast Recovery Diodes 7^^0741 ÜQODÖOT ö H S A K J ~pZ3"Ö7 j3VRM:l00-~i300V Ello:4.0~20A TU/FMU Rating/ Characteristics Absolute Maximum Ratings Vrsm V Type N o \ ^ CTU-G2DR CTU-G3DR FMU-12S, R FMU-14S, R FMU-16S, R

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: I F AV (A) Part Number 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4

FMQG5GS

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

Contextual Info: 4-2 Fast Recovery Diodes ●Thru-Hole VRM V 100 200 400 IF (AV) (A) Package Values in parentheses Axial are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

Contextual Info: 4-2 Fast Recovery Diodes ●Thru-hole VRM V 100 200 IF (AV) (A) 600 Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA) V R=VRM VR=V RM max max Ta (°C) trrq (µs) IF/IRP (mA) trrw (µs) IF/IRP (mA)

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

RU 1A

Abstract: FMUG16 FMU-G16S AU02A ES01A EU01A EU02A FMU-16S FMU-26S FMU-36S
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta (°C) max max t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

CTG-22S

Abstract: CTG-34S CTG-32S CTG-33S CTG23S smew CTG-11S CTG-12R CTG-12S CTG-14R
Contextual Info: SANKEN ELECTRIC C« LTH iS 3SE B Ultra Fast Recovery Diodes _ 7 ^ _ S A K J T~Zt~07 7 ^ 0 7 4 1 GODGfll? b V r m:70~ 400V e i o : 5.0~ 20A BESSES CTG V rm V CTG-12S CTG-12R CTG-14S CTG-14R CTG-21S CTG-21R CTG-22S CTG-22R CTG-23S CTG-23R CTG-24S CTG-24R CTG-31S

RBA-406B

Abstract: CI 3060 elsys CTUG3D AM01 AU02 EM01 EU02A FMU12S FMU-12S rb40 RECTIFIER
Contextual Info: SANKEN ELECTRIC CO LTD 3SE 5 Schottky Barrier Diodes m 7 ^ 0 7 4 1 0000fl21 «= ^ S A K J ^ ; £ | : g | E3Vrm: 3 0 — 9 0 V E lo : 0 .7 ~ 3 0 A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 A K 03 A K 04 A K 06 A K 09

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

FMLG12

Abstract: rb60 RECTIFIER RB40 EU2A SANKEN EU2 RH2F CTB34 sanken s-100 78/rb60 RECTIFIER
Contextual Info: 7^0741 3SE » SA NK EN E L E C T R I C CO LTD QOOGflOS ü E S A K J 7 2 0 3 -OI eVrm: 100~ 1500V E lo:0.5~ l . 2A Fast Recovery Diodes RH/ES/RS/RH/RU/EU io A V rm (V) Ti CC) 5 0 H z H a lf S in e W ave S in g l e P uts T yp e N o \ 250 RH 1 450 400 RH 1A

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41