TRANSISTOR T 2180 Search Results

bvc62

Abstract: STR 734
Contextual Info: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GN1L3N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistors Built-in TYPE R t = 4 .7 k£2 R2 = 10 ki2 • Complementary to GA1 L3N ABSOLUTE M A X IM U M R ATIN G S

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ / ¿ P A 1 8 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1814 is a switching device which can be driven directly by a 4 V power source. The JUPA1814 features a low on-state resistance and

16N25E

Abstract: gsp5000 20F40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP16N25E TMOS E-FET™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

BS170

Contextual Info: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data Case: TO-92, Plastic

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

TTP31

Contextual Info: ft P ft FORWARD INTERNATIONAL ELECTRONICS L ID . HP32 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR M ED IU M P O W E R LIN E A R SW IT C H IN G A PPLIC A TIO N S * C om plem ent to TTP31 ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C Symbol R ating

CL 2181 ic

Abstract: J04045 TRANSISTOR SE 135
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J04045 The RF Line NPIM S ilic o n V H F P o w e r T ra n sisto r 45 W — 175 MHz RF POWER TRANSISTOR NPN SILICON . . . d e sign e d prim arily for 12.5 Volt w ideband, large-signal am plifier applications in industrial and com m ercial F M equipm ent operating to 175 MHz.

Contextual Info: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP ap plicatio ns, it is

transistor t 2190

Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s

8893 single chip tv processor

Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Contextual Info: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7

smd transistor pnp 591

Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

MTP16N25E

Abstract: S 170 MOSFET TRANSISTOR AN569 FET16
Contextual Info: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP16N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS

js sot23

Abstract: BSH102 MGH-20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH102 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08 Philips Semiconductors Product specification

AN569

Abstract: MTP16N25E
Contextual Info: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP16N25E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS

2N6438

Contextual Info: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.

Contextual Info: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP16N25E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high

MJ10004

Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Contextual Info: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

50n03

Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
Contextual Info: Optim ization of the Performance of Power Supply Circuits That Use Low Voltage, Low On-Resistance M O SFETs By F. luan Hshieh, Sydney So, Jeff Chuc Low Voltage, Low On-Resistance Trench MOSFET Design Abstract A typical discrete double-diffused MOSFET or DMOS tran­