TRANSISTOR RBV Search Results

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

CA3246M

Abstract: transistor k 911
Contextual Info: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate

CA3246M

Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
Contextual Info: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate

610E

Abstract: 800E CA3227 CA3227E CA3227M CA3227M96
Contextual Info: CA3227 TM Data Sheet High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the transistors exhibits a value of fT in excess of 3GHz, making

transistor BF 502

Abstract: 502 TJ
Contextual Info: — SEMELAB PLC bOE D = p r= “ ill“ • 8133187 / /N^ i^ -P ack QDD0C1D4 0 2 3 ■ SI1LB MOS POWER BFNk| 4 IG B T T 3 V i \ SEME LAB_ SML200G100BFN 1000V 200A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels

CA3246m

Abstract: CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96
Contextual Info: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency N-P-N Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz March 1993 Features Description • Gain-Bandwidth Product fT > 3GHz The CA3227 and CA3246* consist of five general purpose

APT40GF100BN

Abstract: TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS
Contextual Info: A D VA NC ED POUER TECHNOLOGY b lE D • D E S TIC I □ OOOfl'iG b3T *A V P A dvanced po w er TECHNOLOGY APT40GF100BN 1000V 40A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED POÜIER TECHNOLOGY □ SSTIGT G000fl7fl 03S « A V P blE D A dvanced P o w er Te c h n o l o g y * APT45GF60BN 600V 45A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol V CES

transistor GC cd

Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

APT30G100BN

Contextual Info: ADVANCES POKER TECHNOLOGY blE • 02S7*lQci ODOO'ÌQM TSM M A V P A d v a n ced po w er Te c h n o l o g y 9 APT30G100BN 1000V 30A POWER MOS 1V IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

APT30GL100BN

Abstract: Z1114
Contextual Info: ADVANCED POWER T EC HNO LO GY oas7’io‘i oooosta 7?s « blE avp ADVANCED POWER Te c h n o l o g y ® APT30GL1OOBN 1000V 30A POWER MOS tV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

CA3127

Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
Contextual Info: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN

Contextual Info: A D VA NC ED PO»ER TECHNOLOGY U E « - 0 8 ST101 QD 0 0 8 U 2 77S -A V P ADVANCED PO W ER TECHNOLOGY* APT30GL100BN 1000V 30A POWER MOS tV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATMGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

APT35GL60BN

Abstract: THYRISTOR 35A 300V
Contextual Info: ADVANCED POWER TECHNOLOGY blE 0257^0*! D 0000Ô50 A T53 « A V P d v a n c e d P ow er Technology APT35GL60BN 600V 35A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED POWER TECHNOLOGY blE D Bi QSSTIQT 0000Ô56 244 B A V P • R A d v a n ced F M P o w er Te c h n o l o g y APT75GL60BN 600V 75A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: ADVANCED POUER TECHNOLOGY b lE D Q R S 7 W ] 0GG0Û7G Ô41 « A V P • A dvanced P o w er Te c h n o l o g y APT65GL100BN 1000V 65A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

transistor TT 2146

Abstract: APT50G50BN APT50G60BN APT50G60 538J
Contextual Info: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: ADVANCED POWER TECHNOLOGY 0257^0^ QGGQflflE 5b3 H A V P blE D A dvanced P o w er Te c h n o l o g y APT55GF60BN P O W E R M O S IV 600V 55A IG B T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol