SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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fgt313
Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156
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2SA1186
2SC4024
2SA1215
2SC4131
2SA1216
2SC4138
100VAC
2SA1294
2SC4140
fgt313
transistor fgt313
SLA4052
RG-2A Diode
SLA5222
fgt412
RBV-3006
FMN-1106S
SLA5096
diode ry2a
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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CA3246M
Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate
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CA3227,
CA3246
CA3227
CA3246
CA3246M
CA3246M96
850e
610E
CA3227E
CA3227M
CA3227M96
SPICE 2G6
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610E
Abstract: 800E CA3227 CA3227E CA3227M CA3227M96
Text: CA3227 TM Data Sheet High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the transistors exhibits a value of fT in excess of 3GHz, making
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CA3227
CA3227
610E
800E
CA3227E
CA3227M
CA3227M96
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2am smd transistor
Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels
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SI-5155S
O-220
Rati03S
SPX-62S
SI-3011S
SPX-G32S
SI-3101S
SPZ-G36
SI-3102S
SSB-14
2am smd transistor
transistor smd 4z
HALL SENSOR A 22L
78Mos
EL 14v 4c
78 MOS
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
smd transistor marking 12W
TRANSISTOR SMD MARKING CODE 1P
TRANSISTOR SMD MARK CODE 7a
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CA3246m
Abstract: CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96
Text: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency N-P-N Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz March 1993 Features Description • Gain-Bandwidth Product fT > 3GHz The CA3227 and CA3246* consist of five general purpose
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CA3227,
CA3246
CA3227
CA3246*
TA10854
TA10855,
CA3227
CA3246m
CA3227E
CA3227M
CA3227M96
CA3246
CA3246E
CA3246M96
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CA3246m
Abstract: 610E CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96 m14 transistor
Text: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . >3GHz The CA3227 and CA3246 consist of five general purpose silicon NPN transistors on a common monolithic substrate.
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CA3227,
CA3246
CA3227
CA3246
CA3227
CA3246m
610E
CA3227E
CA3227M
CA3227M96
CA3246E
CA3246M96
m14 transistor
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CA3127
Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
Text: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN
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CA3227
A3127
CA3127,
CA3227
FN1345
CA3127
CA3227M
CA3227M96
TB379
610E
800E
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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CA3246M
Abstract: transistor k 911
Text: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate
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CA3227,
CA3246
CA3227
CA3246
CA3246M
transistor k 911
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transistor BF 502
Abstract: 502 TJ
Text: — SEMELAB PLC bOE D = p r= “ ill“ • 8133187 / /N^ i^ -P ack QDD0C1D4 0 2 3 ■ SI1LB MOS POWER BFNk| 4 IG B T T 3 V i \ SEME LAB_ SML200G100BFN 1000V 200A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
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SML200G100BFN
SML200G100BFN
MIL-STD-750
transistor BF 502
502 TJ
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Untitled
Abstract: No abstract text available
Text: ADVANCED POÜIER TECHNOLOGY □ SSTIGT G000fl7fl 03S « A V P blE D A dvanced P o w er Te c h n o l o g y * APT45GF60BN 600V 45A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol V CES
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G000fl7fl
APT45GF60BN
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transistor GC cd
Abstract: No abstract text available
Text: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT45GL100BN
transistor GC cd
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APT30G100BN
Abstract: No abstract text available
Text: ADVANCES POKER TECHNOLOGY blE • 02S7*lQci ODOO'ÌQM TSM M A V P A d v a n ced po w er Te c h n o l o g y 9 APT30G100BN 1000V 30A POWER MOS 1V IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT30G100BN
O-247AD
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APT30GL100BN
Abstract: Z1114
Text: ADVANCED POWER T EC HNO LO GY oas7’io‘i oooosta 7?s « blE avp ADVANCED POWER Te c h n o l o g y ® APT30GL1OOBN 1000V 30A POWER MOS tV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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APT30GL100BN
I25-C
Z1114
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Untitled
Abstract: No abstract text available
Text: A D VA NC ED PO»ER TECHNOLOGY U E « - 0 8 ST101 QD 0 0 8 U 2 77S -A V P ADVANCED PO W ER TECHNOLOGY* APT30GL100BN 1000V 30A POWER MOS tV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATMGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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ST101
APT30GL100BN
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APT35GL60BN
Abstract: THYRISTOR 35A 300V
Text: ADVANCED POWER TECHNOLOGY blE 0257^0*! D 0000Ô50 A T53 « A V P d v a n c e d P ow er Technology APT35GL60BN 600V 35A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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TECHN0L06Y
APT35GL60BN
THYRISTOR 35A 300V
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY blE D Bi QSSTIQT 0000Ô56 244 B A V P • R A d v a n ced F M P o w er Te c h n o l o g y APT75GL60BN 600V 75A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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APT75GL60BN
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Untitled
Abstract: No abstract text available
Text: ADVANCED POUER TECHNOLOGY b lE D Q R S 7 W ] 0GG0Û7G Ô41 « A V P • A dvanced P o w er Te c h n o l o g y APT65GL100BN 1000V 65A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT65GL100BN
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transistor TT 2146
Abstract: APT50G50BN APT50G60BN APT50G60 538J
Text: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
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APT50G60BN
APT50G50BN
O-247AD
transistor TT 2146
APT50G60
538J
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY 0257^0^ QGGQflflE 5b3 H A V P blE D A dvanced P o w er Te c h n o l o g y APT55GF60BN P O W E R M O S IV 600V 55A IG B T N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT55GF60BN
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