APT30GL100BN Search Results

Contextual Info: APT30GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)30 Absolute Max. Power Diss. (W)147 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case850m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.

Contextual Info: A D VA NC ED PO»ER TECHNOLOGY U E « - 0 8 ST101 QD 0 0 8 U 2 77S -A V P ADVANCED PO W ER TECHNOLOGY* APT30GL100BN 1000V 30A POWER MOS tV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATMGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

APT30GL100BN

Abstract: Z1114
Contextual Info: ADVANCED POWER T EC HNO LO GY oas7’io‘i oooosta 7?s « blE avp ADVANCED POWER Te c h n o l o g y ® APT30GL1OOBN 1000V 30A POWER MOS tV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

APT POWER FET

Abstract: APT110GF60JN APT65GL100BN APT25GF100BN APT30GF60BN APT45GL100BN IGBT SCHEMATIC IGBT 1500 volts APT35GL60BN IGBT 1000 VOLTS TO 1500 VOLTS
Contextual Info: APT IGBT PRODUCTS BVces V ce ON lc,(25C ) lC2(90°C) tf(IND@125 C) Pd APT New Product Volts Volts Amps Amps nsec Watts Part No. Comments LOW CONDUCTION LOSS IGBT PRODUCT FAMILY 1000 2.8 3.0 3.0 65 45 30 35 25 17 1500 1500 1500 260 200 147 APT65GL100BN APT45GL100BN