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Abstract: No abstract text available
Text: APT65GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)65 Absolute Max. Power Diss. (W)245 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case.51 Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
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APT65GL100BN
delay40n
time130n
time675n
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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APT POWER FET
Abstract: APT110GF60JN APT65GL100BN APT25GF100BN APT30GF60BN APT45GL100BN IGBT SCHEMATIC IGBT 1500 volts APT35GL60BN IGBT 1000 VOLTS TO 1500 VOLTS
Text: APT IGBT PRODUCTS BVces V ce ON lc,(25C ) lC2(90°C) tf(IND@125 C) Pd APT New Product Volts Volts Amps Amps nsec Watts Part No. Comments LOW CONDUCTION LOSS IGBT PRODUCT FAMILY 1000 2.8 3.0 3.0 65 45 30 35 25 17 1500 1500 1500 260 200 147 APT65GL100BN APT45GL100BN
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APT65GL100BN
APT45GL100BN
APT30GL100BN
APT75GL60BN
APT50GL60BN
APT35GL60BN
APT50GF100BN
APT40GF100BN
APT25GF100BN
APT55GF60BN
APT POWER FET
APT110GF60JN
APT25GF100BN
APT30GF60BN
IGBT SCHEMATIC
IGBT 1500 volts
IGBT 1000 VOLTS TO 1500 VOLTS
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Untitled
Abstract: No abstract text available
Text: ADVANCED POUER TECHNOLOGY b lE D Q R S 7 W ] 0GG0Û7G Ô41 « A V P • A dvanced P o w er Te c h n o l o g y APT65GL100BN 1000V 65A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT65GL100BN
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