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    TRANSISTOR PD0 Search Results

    TRANSISTOR PD0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PD0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT PRELIMINARY Lead Pb Free Product – RoHS Compliant PD006-SMT SMD Type PHOTO-TRANSISTOR PD006-SMT is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted


    Original     		PDF PD006-SMT PD006-SMT 44mmx0 1000Lx

    TTL to vga

    Abstract: LVDS 30 pin to vga LVDS to vga TTL parallel to vga LVDS display 30 pin 30pin vga header Digital Displays SFD064VX1ADV PD050VX2 of 30 pin LVDS
    Text: 1.17.06 TECHNICAL BRIEF BY: AZD ENGINEERING TFT Digital Board Signals AZ Displays offers decoder boards suitable to display full motion video on its digital TFT panels. Digital displays are designed to interface to a digital-to-analog board via TTL transistor to transistor logic or LVDS (low voltage differential signal).


    Original     		PDF 30-pin 12-pin PD050VX2 SFD064VX1ADV/VGA/INVT TTL to vga LVDS 30 pin to vga LVDS to vga TTL parallel to vga LVDS display 30 pin 30pin vga header Digital Displays SFD064VX1ADV of 30 pin LVDS

    AO4420

    Abstract: AO4420L
    Text: Rev 4: Nov 2004 AO4420, AO4420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for


    Original     		PDF AO4420, AO4420L AO4420 AO4420L

    AO4609

    Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
    Text: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side


    Original     		PDF AO4609 AO4609 Drai012 mm4609 aos Lot Code Week ALPHA MARKING CODE

    B420

    Abstract: AOB420 D2PAK to-263 omega AOB420L
    Text: Rev 2: Oct 2004 AOB420, AOB420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use


    Original     		PDF AOB420, AOB420L AOB420 O-263 PD-00081 AOB420L AOB420 B420 D2PAK to-263 omega

    AO7403

    Abstract: omega 600 AO7403L 3N SOT323 diode marking code 3n
    Text: Rev 2: Aug 2004 AO7403, AO7403L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the


    Original     		PDF AO7403, AO7403L AO7403 OT323 SC-70 OT-323) SC-70 omega 600 AO7403L 3N SOT323 diode marking code 3n

    Untitled

    Abstract: No abstract text available
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		PDF AO4600 AO4600 AO4600L AO4600L PD-00165

    ao4600

    Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		PDF AO4600 AO4600 AO4600L AO4600L PD-00165 Complementary POWER MOSFET AO4600 PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2

    PD0026

    Abstract: transistor C 4429 equivalent AO4429 AO4429L PD-002 aos Lot Code Week
    Text: AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard


    Original     		PDF AO4429 AO4429 AO4429L AO4429L PD-00268 PD0026 transistor C 4429 equivalent PD-002 aos Lot Code Week

    ao4800

    Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
    Text: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck


    Original     		PDF AO4800 AO4800 AO4800L AO4800L PD-00223 4800 so-8 aos Lot Code Week 4800 SO8

    4410 SO-8

    Abstract: 4410 diode MARKING CODE 18A AO4410L transistor on 4410 AO4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE
    Text: Rev 0:Jan 2003 Rev 1:Jan 2004 Rev 2:Mar 2004 AO4410, AO4410L Lead-Free N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate


    Original     		PDF AO4410, AO4410L AO4410 AO4410L 4410 SO-8 4410 diode MARKING CODE 18A transistor on 4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE

    d436

    Abstract: d436 transistor transistor d436
    Text: AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOD436 AOD436 AOD436L O-252 PD-00148 d436 d436 transistor transistor d436

    RL56

    Abstract: AO7411L Marking Code 18A SC-70-6L AO7411 SC-70-6 RL-56 marking 624 sc-70
    Text: AO7411 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7411 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO7411 AO7411 AO7411L AO7411L SC-70-6 PD-00353 SC-70 RL56 Marking Code 18A SC-70-6L SC-70-6 RL-56 marking 624 sc-70

    AO4916

    Abstract: 4916 mosfet AO4916L 4916 alpha rjl 10a
    Text: Rev 3: Nov 2004 AO4916, AO4916L Green Product Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch


    Original     		PDF AO4916, AO4916L( AO4916 AO4916L AO4916 PD-00071 4916 mosfet AO4916L 4916 alpha rjl 10a

    D408

    Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L
    Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).


    Original     		PDF AOD408 AOD408 AOD408L O-252 PD-00085 D408 D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408

    mosfet 4914

    Abstract: 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 AO4914 AO4914L 4914 alpha
    Text: Rev 0: July 2003 Rev 1: Jan 2004 Rev 2: Mar 2004 AO4914, AO4914L Lead-Free Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make


    Original     		PDF AO4914, AO4914L AO4914 AO4914L mosfet 4914 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 4914 alpha

    8178 n

    Abstract: 8178 preregulator A817 coil ignition ignition coil Low Dropout Positive TO-243AA A8178LLR A8178LLT
    Text: 8178 8178 Data Sheet 27468.22 LOW-DROPOUT, 7.7 V PREREGULATOR LOW-DROPOUT, 7.7 V PREREGULATOR 7.7 V 3 VR 1 2 W E I V 7.7 V e c i t o n t These devices are supplied in small-outline plastic transistor packages for surface-mount applications. The A8178LLR is supplied in


    Original     		PDF A8178LLR OT-23/TO-236AB; A8178LLT OT-89/TO-243AA MA-009-3 8178 n 8178 preregulator A817 coil ignition ignition coil Low Dropout Positive TO-243AA

    8178 n

    Abstract: 8178 coil ignition ignition coil A8178LLR A8178LLT automotive transistor coil ignition TA 8178
    Text: 8178 8178 Data Sheet 27468.22 LOW-DROPOUT, 7.7 V PREREGULATOR LOW-DROPOUT, 7.7 V PREREGULATOR 7.7 V 3 VR 1 2 W E I V 7.7 V e c i t o n t These devices are supplied in small-outline plastic transistor packages for surface-mount applications. The A8178LLR is supplied in


    Original     		PDF A8178LLR OT-23/TO-236AB; A8178LLT OT-89/TO-243AA MA-009-3 8178 n 8178 coil ignition ignition coil automotive transistor coil ignition TA 8178

    BU4508AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features


    OCR Scan     		PDF BU4508AX 16kHz_ 100Pc/PD25C_ BU4508AX

    TRANSISTOR BU2525DF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to


    OCR Scan     		PDF BU2525DF 100-PC 1E-06 1E-04 1E-02 TRANSISTOR BU2525DF

    NDS9410A

    Abstract: No abstract text available
    Text: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9410A bS0113Q NDS9410A

    MC 151 pnp

    Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>


    OCR Scan     		PDF 0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4698 2N4910 2N2853 MC 151 pnp 05Z5 2N3740A 2N3741A 2N4900

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


    OCR Scan     		PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487