TRANSISTOR PC 817 Search Results

Liteon PC817

Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
Contextual Info: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2

2SC5053

Abstract: AL MARKING AL MARKING CODE 2SA1900 T100
Contextual Info: 2SA1900 Transistors Medium power transistor −50V, −1A 2SA1900 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.15V at IC / IB = −500mA/ −50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SC5053

2SC5053

Abstract: 2SA1900 T100
Contextual Info: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 (1)Base

2SC5053

Abstract: 2SA1900 T100
Contextual Info: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 1.5 2.5

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

Contextual Info: 5YMSEMI SEMICONDUCTOR BC8 17-16LT1 SOT -23 Plastic Encapsulate Transistors TRANSISTOR NPN BC8 17-25LT1 BC8 17-40LT1 FEATURES Power dissipation Pc« : 0.3 W (Tamb=25 °C) Collector current Icm : 05 Collector base voltage A V cbo : 50 V Operating and storage junction temperature range

transistor KTA 949

Abstract: KTC2229 2SC 2229 transistor KTN5013 2238B transistor B 1184 transistor HFE 400 1w to 92 TO92C
Contextual Info: 2 DRIVER TRANSISTOR USE TYPE v CEO V * PC (mA) (mW) ELECTRICAL CHARACTERISTICS (Ta = 25C) T. Co ICBO (uA) «AX *E VCB (V) (mA) hFE VCE (sat) VCE (V) k: (mA) (V) *C (mA) (MHz) TYP (MIN) VCE k (V) (mA) -10 4.0 -10 I TO-92L fT MAX *B (mA) Cob. (pF) TYP (MAX)

MCH218CN106K

Contextual Info: TECHNICAL NOTE High-performance Regulator IC Series for PCs Ultra Low Dropout Linear Regulators for PC Chipsets BD3508EKN ● Description The BD3508EKN ultra low-dropout linear chipset regulator operates from a very low input supply, and offers ideal performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power transistor to

k 513

Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
Contextual Info: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

C5 MARKING TRANSISTOR

Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to B C 817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollecto r E m itter Voltage

Tenma

Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions
Contextual Info: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO

transistor C 2240

Abstract: transistor mw 131 2.4 ghZ rf transistor transistor cross reference chart RF TRANSISTOR BFP650F transistor 20 dB 2400 mhz low power rf transistor T INFINEON schematic diagram amplifier TRANSISTOR 12 GHZ
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 3 I n f i n e on ’ s B F P 6 5 0 F R F T r a n s i s t or i n H i g h L i n e a r i t y 2 . 4 G H z L o w N o i s e A m p l i fi e r L N A Application R F & P r o t e c ti o n D e v i c e s

transistor cross reference chart

Abstract: BFP405F to4 88 TO4 45
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 4 8 B F P 4 05 F R F T r a n s i s t or a s L o w C o s t , L o w C u r r e n t 2.5 mA 3 to4 GHz UWB Tx Amplifier with 2.2 3.6 V Operation R F & P r o t e c ti o n D e v i c e s

transistor t 2190

Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s

bfp640f

Abstract: Transistor cross
Contextual Info: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 2 8 R e d u c e d P ar t s C o u n t L N A f o r 1 .4 - 2 .0 G H z u s i n g t h e S i G e T r a n s i s to r B F P 6 4 0 F R F & P r o t e c ti o n D e v i c e s

RF remotecontrol schematic diagram

Abstract: TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference bpf 434 mhz 2 to 3 GHz bandpass filter wide band Miteq SMC-02 BFP460 circuit diagram of rf 434
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 4 E S D - H a r d e n e d B F P 4 6 0 R F T r a n s i s t or i n a L o w C o s t 4 3 4 M H z L N A + B a n dp a s s F i lt e r A p p l i c a ti o n R F & P r o t e c ti o n D e v i c e s

B817

Abstract: B 817 K*1047
Contextual Info: KSD1047 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High P ow er D issipation • C om plem ent to K S B 817 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic

bfp640f

Abstract: transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ
Contextual Info: Application Note, Rev. 1.2, Oktober 2007 Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier LNA , with reduced external component count and reduced gain at 2.4 GHz RF & Protection Devices Edition 2007-10-17

BFP740F

Abstract: SMC-02 amplifier TRANSISTOR 12 GHZ transistor cross reference chart FSEM30
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 8 BFP740F Ultra-Low Noise Silicon-Germanium T r a n s i s t o r a s 5 - 6 G H z L o w N o i s e A m p l i f i er L N A R F & P r o t e c ti o n D e v i c e s

ultra low noise RF Transistor

Abstract: BFR740F BFP740F sdars application note no. 122 sdars lna amplifier TRANSISTOR 12 GHZ Low Noise R.F 11 A 122 transistor infineon b 58 468
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 2 I n f i n e on ’ s B F P 7 4 0 F U l tr a L ow N o i s e R F T r a n s i s t o r i n 2 . 33 G H z S D A R S L o w N o i s e Amplifier Application R F & P r o t e c ti o n D e v i c e s

BFP640

Abstract: gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 1 L o w N o i s e A m p l i f i e r f o r G P S A p p l i c at i o n s u s i ng B FP 6 40 S i G e T ra n s i s t o r R F & P r o t e c ti o n D e v i c e s

ic 817A

Abstract: transistor 817a 1627a 817a Ic 817A kec kta 817a y KTA817A
Contextual Info: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTA 817A A PPLICA TIO N S ) • Driver Stage Amplifier Applications. ■ Voltage Amplifier Applications. c FEATU RES J > • C o m p l e m e n t a r y to K T C 1 6 2 7 A. • Driver S t a g e A p p l i c a t i o n of 30 to 35 W a t t s A m p l i f i e r s