TRANSISTOR P2D Search Results

PZTA92T1

Abstract: SMD310
Contextual Info: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

Contextual Info: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT−223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage

p2d transistor

Abstract: pzta92t1
Contextual Info: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

transistor P2D

Contextual Info: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

sot-223 body marking D K Q F

Contextual Info: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol

Marking BA SOT89

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES

transistor P2D

Abstract: 301 marking code PNP transistor BP317 PXTA42 PXTA92 PXTA93 P2d MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 29 Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES PINNING • Low current max. 100 mA

MAGX-000035-100000

Abstract: GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035
Contextual Info: MAGX-000035-100000 GaN HEMT Power Transistor 100W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

transistor GaN

Contextual Info: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching

MAGX-000035

Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

TUI-lf-9

Abstract: ATC700B392JT50X
Contextual Info: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched

MAGX-000035-030000

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw transistor 15 GHz MAGX-000035-SB1PPR Gan on silicon transistor GP18-20 5 GHZ TRANSISTOR 1W MAGX-000035
Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

ATC100B151J

Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

mrf6vp2600h

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

ATC100B3R3

Abstract: AN1955 MRF7S35120HSR3 Header MTTF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

J161 mosfet transistor

Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon http://onsemi.com Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

MRF7S35015H

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN Discrete RF Transistor Applications • Wideband and narrowband defense and commercial communication systems –– Jammers –– Professional radio systems –– WiMAX Available Package Top Bottom Product Features

p2d transistor

Abstract: transistor P2D pzta92t1
Contextual Info: PZTA92T1 Preferred Devices High Voltage Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TC = 25°C unless otherwise noted Rating Symbol Value Unit Collector-Emitter Voltage VCEO −300 Vdc Collector-Base Voltage