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    ATC100B3R3 Price and Stock

    American Technical Ceramics Corp ATC100B3R3CP500X

    CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000033 UF, SURFACE MOUNT, 1111
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    Quest Components ATC100B3R3CP500X 425
    • 1 $2.175
    • 10 $2.175
    • 100 $2.175
    • 1000 $1.0875
    • 10000 $1.0875
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    ATC100B3R3CP500X 5
    • 1 $3.3064
    • 10 $2.4798
    • 100 $2.4798
    • 1000 $2.4798
    • 10000 $2.4798
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    American Technical Ceramics Corp ATC100B3R3BT500XT

    CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0000033 UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B3R3BT500XT 326
    • 1 $3.75
    • 10 $3.75
    • 100 $2.5
    • 1000 $2.3125
    • 10000 $2.3125
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    American Technical Ceramics Corp ATC100B3R3CC500XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 7.5758% +TOL, 7.5758% -TOL, BG, -/+90PPM/CEL TC, 0.0000033UF, 1411
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B3R3CC500XB 9
    • 1 $4.05
    • 10 $2.025
    • 100 $2.025
    • 1000 $2.025
    • 10000 $2.025
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    American Technical Ceramics Corp ATC100B3R3CP500XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 7.5758% +TOL, 7.5758% -TOL, BG, 90+/-20PPM/CEL TC, 0.0000033UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B3R3CP500XB 6
    • 1 $4.05
    • 10 $2.7
    • 100 $2.7
    • 1000 $2.7
    • 10000 $2.7
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    American Technical Ceramics Corp ATC100B3R3CP

    100B3R3CP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100B3R3CP 5
    • 1 $4.05
    • 10 $2.7
    • 100 $2.7
    • 1000 $2.7
    • 10000 $2.7
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    Find more ATC100B3R3 price and stock on Findchips.com

    ATC100B3R3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-


    Original     		PDF MW7IC915N MW7IC915N MW7IC915NT1

    SEMICONDUCTOR J598

    Abstract: No abstract text available
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse


    Original     		PDF RFHA1023 RFHA1023 DS120508 SEMICONDUCTOR J598

    RFHA1023

    Abstract: SEMICONDUCTOR J598
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation


    Original     		PDF RFHA1023 RFHA1023 DS110630 SEMICONDUCTOR J598

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    MRFE6S9200H

    Abstract: 465B A114 A115 AN1955 JESD22 MRFE6S9200HR3 MRFE6S9200HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9200H MRFE6S9200HR3 MRFE6S9200HSR3 MRFE6S9200H 465B A114 A115 AN1955 JESD22 MRFE6S9200HSR3

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101

    transistor j241

    Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor

    ATC100B3R3

    Abstract: AN1955 MRF7S35120HSR3 Header MTTF
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 ATC100B3R3 AN1955 MRF7S35120HSR3 Header MTTF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960


    Original     		PDF MRF8S9202N MRF8S9202NR3 MRF8S9202GNR3 MRF8S9202NR3

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500

    A9M15

    Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor

    J014

    Abstract: BLM21PG300SN1D
    Text: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3 MRF8S8260H J014 BLM21PG300SN1D

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9200H MRFE6S9200HR3 MRFE6S9200HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9200N MRF8S9200NR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage


    Original     		PDF MW7IC915N 51miconductor MW7IC915NT1

    c11cf

    Abstract: No abstract text available
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse


    Original     		PDF RFHA1023 RFHA10k DS120508 c11cf

    atc100b6r2

    Abstract: KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9170N MRF8S9170NR3 atc100b6r2 KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M

    AN1955

    Abstract: MRF6V10250HSR3 CRCW251220R NI-780S
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 NOT RECOMMENDED FOR NEW DESIGN N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3 AN1955 MRF6V10250HSR3 CRCW251220R NI-780S

    ATC100B3R9CT500XT

    Abstract: BLM21PG300SN1D ATC100B430JT500X AN1955 ATC100B430JT500XT GRM55ER72A475KA01 C13-C28 465B-03
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S8260H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3 ATC100B3R9CT500XT BLM21PG300SN1D ATC100B430JT500X AN1955 ATC100B430JT500XT GRM55ER72A475KA01 C13-C28 465B-03