C11CF Search Results

Contextual Info: C11CF Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current800 @Temp (øC) (Test Condition)95# V(RRM)(V) Rep.Pk.Rev. Voltage2.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.13k V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)2.5k @Temp. (øC) (Test Condition)25#

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

C11AH3r9

Abstract: C17CF c17c C11CF3R C11AH C11CF1R CDR11 atc MIL-C-55681 cdr14 C11CF4R7
Contextual Info: Dimensions Case Sizes INCHES Termi­ nation Code L Temperature Co­ efficients from —5 5 °C to + 1 2 5 °C T Max Y S • °< S !o .055^.010 .050 C11 T 055- S o 055- S o .050 C17 S .110±.015 .100 ,015±.010 C17 T ■1 1 0 - S o M0-S°5 .100 ,015±.010

c11cf

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: RFHA1023 RFHA1023 225W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high

C11AH100

Abstract: C11AH3r9 C11CF9R1 C11AH270 C11AH470 C11AH101 C11AH C11AH3R3 C11CF6R8 C11AH750
Contextual Info: C11 .055" x .055" dielectric laboratories Porcelain High Performance High Q High performance surface mountable Multilayer Capacitors for RF and Microwave applications. Part Number C 11 AH 101 J 8 U X L T L Tape and Reel Optional Product Code Size Code Capacitance Code

SEMICONDUCTOR J598

Abstract: rfha
Contextual Info: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

C17UL

Abstract: C06UL transistor smd code marking 102 C17AH101k transistor smd code marking 431 431 SMD CODE MARKING P62BN820MA2636 C08 SMD MARKING CODE solder wire HMP C06CF
Contextual Info: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of experience, you can turn to DLI with confidence for your