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Microchip Technology Inc 1N6465JANTX/TR Diode TVS Single Uni-Direction 24V 500W 2-Pin Case B T/R - Tape and Reel (Alt: JANTX1N6465/TR)
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Avnet Americas	1N6465JANTX/TR	Reel		25 Weeks	100	1 - 10 - 100 $14.94433 1000 $13.99473 10000 $13.99473	Buy Now
Micross Components 1N6465JAN T DAP UNI 500W 24V - Bulk (Alt: JAN1N6465)
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Avnet Americas	1N6465JAN	Bulk		18 Weeks	250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micross Components 1N6465JANTX T DAP UNI 500W 24V - Bulk (Alt: JANTX1N6465)
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Avnet Americas	1N6465JANTX	Bulk		18 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc 1N6465JANTXV Diode TVS Single Uni-Directional 24V 500W 2-Pin B-Melf Bag - Bulk (Alt: JANTXV1N6465)
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Avnet Americas	1N6465JANTXV	Bulk		25 Weeks	100	1 - 10 - 100 $16.4929 1000 $15.4449 10000 $15.4449	Buy Now
Micross Components 1N6465JANTXV MIL 500 W UNIPOLAR TVS - Bulk (Alt: JANTXV1N6465)
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Avnet Americas	1N6465JANTXV	Bulk		25 Weeks	250	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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465J Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
pq40 30 Abstract: MAX4336 CORE PQ40 Text: TDK Power Transformers, Power Inductors PQ40/40 CORE TYPE SHAPES AND DIMENSIONS Lead form A B PIN CONFIGURATION A Lead terminal facing up B (Lead terminal facing down) 11.81-465J ii >14 4-<¿1.5 [.059] 13 - O « Lead wire Lead wire «j»2.51.098] 1 See recom m ended through-hole diam eter	OCR Scan	PQ40/40 81-465J PQ40/40-150A43RA PQ40/40-220A36RA PQ40/40-270A33RA PQ40/40-330A27RA PQ40/40-390A27RA PQ40/40-470A24RA PQ40/40-560A22RA PQ40/40-680B20RA pq40 30 MAX4336 CORE PQ40	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MOS MEMORY PRODUCTS TC55465P/J-20, TC55465P/J-25 TC55465P/J-35 ¡d e s c r ip t io n ] The TC55465P/J is a 262,144 b i t s high speed s t a t i c random ac c e ss memory organ ized as 65,536 words by 4 b i t s using CMOS tech n o lo g y , and operated from a s in g le 5 -v o lt supply.	OCR Scan	TC55465P/J-20, TC55465P/J-25 TC55465P/J-35 TC55465P/J TC55465P/J-2Ö	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S38010H Rev. 0, 8/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class	Original	MRF7S38010H MRF7S38010HR3 MRF7S38010HSR3	PDF
j821 Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS	PDF
j655 Abstract: J691 2508051107Y0 400S A114 A115 AN1955 JESD22 MRF7S38040HR3 MRF7S38040HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S38040H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38040HR3 MRF7S38040HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to	Original	MRF7S38040H MRF7S38040HR3 MRF7S38040HSR3 MRF7S38040HR3 j655 J691 2508051107Y0 400S A114 A115 AN1955 JESD22 MRF7S38040HSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 2, 4/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3	PDF
J161 mosfet transistor Abstract: 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S35015HS Rev. 1, 8/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35015HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.	Original	MRF7S35015HS MRF7S35015HSR3 J161 mosfet transistor 465J 400S A114 A115 AN1955 C101 JESD22 MRF7S35015HSR3	PDF
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original		PDF
MRF8P9040N Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial	Original		PDF
atc 17-25 Abstract: J1702 MRF7S38010HR3 400S A114 A115 AN1955 JESD22 MRF7S38010H MRF7S38010HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S38010H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38010HR3 MRF7S38010HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to	Original	MRF7S38010H MRF7S38010HR3 MRF7S38010HSR3 MRF7S38010HR3 atc 17-25 J1702 400S A114 A115 AN1955 JESD22 MRF7S38010H MRF7S38010HSR3	PDF
F61C Abstract: transistor KA F6 1303 HP 5004a N1134 fu22 Transistor TT 2144 woodward 8290 MIL-STD-806B 8858101 NISSEI AH capacitors Text: Model 5004A Service SECTION VIII SERVICE 8-1. INTRODUCTION 8-2. This section provides safety considerations, logic symbols, troubleshooting procedures, block diagram and description, circuit theory, component location photos, and schematic dia gram service information .	OCR Scan	C338-9467 F61C transistor KA F6 1303 HP 5004a N1134 fu22 Transistor TT 2144 woodward 8290 MIL-STD-806B 8858101 NISSEI AH capacitors	PDF
OVS 30 Abstract: No abstract text available Text: H ARM S CA Series J u ly 1999 D ata S h e e i File N u m b e r 2 1 8 7 .5 Features Industrial High Energy Metal-Oxide Disc Varistors T h e CA Series of transient surge suppressors are industrial high-energy disc varistors M OVs intended for special • Provided In Disc Form For Unique Packaging By	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S38040H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38040HR3 MRF7S38040HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to	Original	MRF7S38040H MRF7S38040HR3 MRF7S38040HSR3 MRF7S38040HR3	PDF

465J-02 Abstract: 400S Text: 2X D -$-\|bbb \|T\|A®\|B® 2X K R LID N (LID)-0- c c c ® T A ® B ® i— C £ SEATING PLANE M (INSULATOR)-0- a a a ® T A ® B ® A (FLANGE)' FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. T IT L E : NI —400S—240 S (INSULATOR) aaa® T A ® B ®	OCR Scan	98ASA10732D 465J-02 5M-1994. 98ASA10732D 465J-02 400S	PDF