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    TRANSISTOR K 2056 Search Results

    TRANSISTOR K 2056 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 2056 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N464

    Abstract: 2N464 equivalent transistor c 3206 Transistor 63B 2N465 2N467 e fzr 2N464 JAN MIL-T-19500/52B
    Text: MIL-s-19500/49c EL 24 nay 1968 SUPERSEDING: See Section 6 MILITASY SPECIF1CATION SE-fICONDUCTOR DEVICE, TRANSISTOR, PNP, CEFMANIUM TYPES 2N464, 2N465, 2N467 I ‘o 1, SCOPE 1.1 =. - ThLs specification cOver$ the detail rewireaents for germanium, PNP, transistors for use in Low-pawer, amp Lifier applications in compatible


    Original     		PDF MIL-s-19500/49c 2N464, 2N465, 2N467 140nmouth, 2N464 2N464 equivalent transistor c 3206 Transistor 63B 2N465 2N467 e fzr 2N464 JAN MIL-T-19500/52B

    germanium transistor pnp

    Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
    Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies


    Original     		PDF WiOO/25A 2N240 uG-491A/U, MIL-S-19500/25B 15SUE. 10UAL germanium transistor pnp GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c

    mdd 1051

    Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
    Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY


    Original     		PDF 1950W9B 1950W9A GBfMi14NIUM, UG-491AW 91-6C S-1950W9B Force-11 s9614163) mdd 1051 circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    m-pulse tunnel diode

    Abstract: Mp2407 MP4033 MP2923 M-PULSE
    Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: lEE DI 7cïT?G?k OODSma 5 SANYOSEMICONDUCTORCORP r-sv-i/ 2SD1655 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output Applications 1753B Applications . High-voltage, power switching Features . Fast speed tfinaxsO.Hus .


    OCR Scan     		PDF 2SD1655 1753B 1S-126A IS-20MA

    b1181

    Abstract: 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D
    Text: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" NPN 201 oa 00[]4,i3,i T ~ 33- K Epitaxial Planar Silico n Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage


    OCR Scan     		PDF 2SD823 7cH707Li QDD4c13ci B1181 B1252 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D

    2SD1400

    Abstract: cp 06a
    Text: SANYO SEMICONDUCTOR 15E CORP » 1 7Tì7Q 7ti O O DS Qf l l - f '3 3 - 1 3 2SD1400 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1267B Features: • High brea k d o w n voltage and h i g h reliability


    OCR Scan     		PDF 2SD1400 1267B IS-126 1S-126A IS-20MA 2SD1400 cp 06a

    2SK681

    Abstract: No abstract text available
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE FEATURES 2S K 681 • Suitable fo r sw itching power supplies, actuater controls, PACKAGE DIMENSIONS and pulse circuits • in m illim eters inches Low R Ds(on) R DS(on) = 0 -9 5 n T Y P - •


    OCR Scan     		PDF 2SK681 RS39726 1986M 2SK681

    3N35

    Abstract: tetrode transistor RAW MATERIAL INSPECTION procedure 3N35 JAN
    Text: MIL-S-19500/80E J 7 A p ril 1972 _ SÜ PK K SE D IN U s - 1 QRnn/flnn m ît 1 July 1965 See 6.3 H m T ^T A D V iriiU J k m u x O D P ^ T X 'T r ' A OTTAKT u r u v ju ' i v a i i v n SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPE 3N35 This specification is m andatory for use by all D epartiiiy n w tj


    OCR Scan     		PDF MIL-S-19500/80E MIL-S-19500/SOD MIL-S-19500. 3N35 tetrode transistor RAW MATERIAL INSPECTION procedure 3N35 JAN

    OC 140 germanium transistor

    Abstract: OC 74 germanium transistor 2N466 715C 5051A
    Text: MIL-S-19500/5 ».E * K r.roh 1 <?' SUPERSEDING »»TT o 1A cnn/dn 1V1X U “ Ü " l i 7 J U U / 0 - 1 1 / 5 March 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. PNP GERMANIUM, LOW-POWER TYPE 2N466 m ia fin n fîn n la to i^cttiun iipia Vu-iy* * ann11 ucpax


    OCR Scan     		PDF MIL-S-19500/5 MIL-S-195Ã 0/51D 2N466 OC 140 germanium transistor OC 74 germanium transistor 2N466 715C 5051A

    2N1480

    Abstract: MARKING 333 transistor C200 2N1479 2N1481 2N1482 SMA-KE 434 MARKING
    Text: à ilII _ C _ 1 Û C r t A /'»ftl/'/PI \ m iu - j- i 7JUU/ zu/V-^ELj 9 December 1 9 6 6 bUFfcKbtülNÜ AA II -.ç_io*;nn/on • « '« w v / ¿w7vo/Ei iu k ;\ 13 OrfntiAr 1 9 AA MILITARY SPECIFICATIO N TRANSISTOR, N PN , SILIC O N TYPES 2N1479, 2N 1480,2N 1481,2N 1482


    OCR Scan     		PDF MIL-S-19500/207C MIL-S-19500/207B 2N1479, 2N1480/2N1481/2N1482 2N1479 -65to 2N1480 2N1481 MARKING 333 transistor C200 2N1482 SMA-KE 434 MARKING

    K 2056 transistor

    Abstract: transistor K 2056 transistor T K 2056
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 SC 2056 is a silicon N PN epitaxial planar type transistor designed for R F power amplifiers in V H F band portable or hand-held radio applications. D im e nsions in mm


    OCR Scan     		PDF 2SC2056 K 2056 transistor transistor K 2056 transistor T K 2056

    K 2056 transistor

    Abstract: 2SK777
    Text: SANYO SEMICONDUCTOR Ï I Ë T 1 CORP 711707t 3 ? - 12. r - 2SK777 G0QSMb3 N-Channel M OS Silicon Fieid-Effect Transistor 2056 Very High Speed Switching Applications 2661 Features . Low ON résistance, very high-speed switching Absolute H a i l n Ratings at Ta=25°C


    OCR Scan     		PDF 711707t 2SK777 IS-126 1S-126A IS-20MA IS-313 IS-313A K 2056 transistor 2SK777

    500 DKZ

    Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
    Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt


    OCR Scan     		PDF 150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    OC 74 germanium transistor

    Abstract: OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P
    Text: MLL-S-i95ÛÛ/64D 29 June 196? SU PER SED E MIL-S-19500/64C «I nuvemrer I_ ivo i iu See 6.2 M ILITARY SPECIFICATION SEMICONDUCTOR D EVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER T Y PE 2N39GA This specification is mandatory for use by all Depart* ments and Agencies of the Department of Defense.


    OCR Scan     		PDF MEL-S-19500/64D MIL-S-19500/64C 2N39GA -i-100 MIL-S-19500 MIL-S-19500/64C. OC 74 germanium transistor OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P

    3N74

    Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
    Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper


    OCR Scan     		PDF MIL-S-19500/390 TX3N75, TX3N76, 3N127, TX3N127 3N74-76 3N127 3N127 3N74 TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N76 3N75 JAN 3K76

    Helipot

    Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
    Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used


    OCR Scan     		PDF MIL-S-19500/425 JAN2N5431, JANTX2N5431 pulse-repe0/425 MIL-S-19500, MIL-S-19500 Helipot JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note

    2N502A

    Abstract: 1026 power trasistor bolometer application 2N502B bolometer
    Text: KIL-S-19500/ll2C EL^ h May 196?_ ^ SUPERSEDING MIL-S-19500/112B( SigC 23 Noveaber 1966 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPES 2N502A AND 2N502B I. SCOPE 1*1 Scope.- Thi* specification cover* the detail requireaents for geraaniua, PNPi transistors T o t particular use as 20G-ME2 aapiirier devices haring a ainiaua


    OCR Scan     		PDF MXL-S-19500/112C MIL-S-19500/L12B( 2N502A 2N502B 200-Mbi 961-A099 1026 power trasistor bolometer application 2N502B bolometer

    Transistor BFR 97

    Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


    OCR Scan     		PDF fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79

    Rt113

    Abstract: BUS11 BUS11A
    Text: BUSH BUS11A : 'x. O SILICON DIFFUSED POW ER TRANSISTORS Hlgh-voltiS», lilgh ipecd, glftis passivateti n p il po wer tromistorj in o T O 3 cnvalopa, Intended or usa in corwerwis, Inverters, switching »esulatoli, m otor control sy tw m * otc, Q UICK R E F E flE N C E DATA


    OCR Scan     		PDF BUS11 BUS11A BUS11 Rt113 BUS11A

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


    OCR Scan     		PDF

    2N1051

    Abstract: 2w105 2w1051 D 1414 transistor
    Text: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 *3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1* o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,


    OCR Scan     		PDF -19100/216A 2N1051 MIL-STD-750 MDL-S-19500, MIL-8-19500 5961-H179J 2N1051 2w105 2w1051 D 1414 transistor