TRANSISTOR IRF 130 Search Results

IRF530FP

Abstract: OT 306 IRF 950
Contextual Info: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF 530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY

irf 740

Abstract: IRF 740 N IRF 324 transistor IRF 740 741 TC IRF741FI 742FI 740FI diode 742
Contextual Info: rZ 7 IRF 740/FI-741/FI IRF 742/FI-743/FI S G S -T H O M S O N [MD g[S(9 [i[L[l(gT»RilD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on) 'd " IRF740 IRF740FI 400 V 400 V 0.55 n 0.55 fi 10 A 5.5 A IRF741 IRF741FI 350 V 350 V 0.55 0.55

DS4410

Abstract: irf 640 audio amplifier
Contextual Info: SL6679 M IT E L Direct Conversion FSK Data Receiver SE M IC O N D U C T O R Preliminary Information Supersedes September 1996 version, DS4410 - 1.5 DS4410 - 2.1 The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all

transistor 13007

Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T- 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

diode U3j

Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Contextual Info: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique

transistor irf 647

Abstract: transistor IRF 531 transistor irf 064 irf 570 p570
Contextual Info: MOTOROLA IRF530 IRF531 IRF532 IRFS33 SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These T M O S Power FETs are designed for low voltage, high speed power switching applications such as switching regulators,

SSOP24

Abstract: TA8157AF TA8157AFN power transistor CURRENT SWITCH 0.5 1 AMP toshiba headphone amplifier TA8157
Contextual Info: TA8157AF/AFN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8157AF,TA8157AFN Stereo Headphone Power Amplifier 1.5V USE The TA8157AF and TA8157AFN are developed for play−back stereo headphone equipments at low voltage operation (1.5V use).

2SK528

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS INDUSTRIAL APPLICATIONS Unit in mm 7.0 1 J RATING 2 Vd s x 400 V vgss ±20 V DC Id Pulse idp 4 Drain Power Dissipation (Tc=25°C) Pd Channel Temperature Tch Storage Temperature Range Tstg CHARACTERISTIC

all transistor IRF 310

Abstract: transistor irf 645 irf mosfet 12A 600V MOSFET IRF 940 MOSFET IRF 635 MOSFET IRF 380 TRANSISTOR MOSFET IRF all transistor IRF 312 IRF 730 TRANSISTOR MOSFET IRF VDs 600v
Contextual Info: SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

2SJ123

Abstract: 16JL 2SK442 opto mos application TCS5C CC OWV W 1668-2
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ Ti 9097250 TOSHIBA CDISCRETE/OPTO D e I t OTTSSG DülttfiD 4 | 99D 16680 D T"- 3 ? - O ? ¿/oóìiìht SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 4 4 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED SWITCHING APPLICATION.

Contextual Info: « n a s i DOi?aat 881 • m ttsu b b h irf pow er module M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM © PIN : fflR n : RF INPUT © V C C I : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY ®P0 : RF O UTPUT

TRANSISTOR D 2627

Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage

K 2645 transistor

Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
Contextual Info: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W

Transistor SJ 2517

Abstract: transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • ODD^SbS BUV70 ■¡nyilFttJlMlM electronic Cr*Miv«■fcchnotogte* T -33-13 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies features: • Implantation • • High reverse voltage • Triple diffusion

TRANSISTOR BI 187

Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Contextual Info: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage

ta8529f

Abstract: TA8528 toshiba mcp
Contextual Info: TOSHIBA TA8529F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP PACKAGE TA8529F Stepping Motor Driver 1C TA8528 + 2SA950 X 4 MCP TA8529F is a stepping motor driver 1C which operates based on bipolar transistors. The device incorporates stepping motor driver 1C TA8528

transistor bc 237c

Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TA8157AF-5

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA8157AF, TA8157AFN SILICON MONOLITHIC STEREO HEADPHONE PO W ER AM PLIFIER 1.5V USE The TA8157AF and TA8157AFN are developed for play-back stereo headphone equipments at low voltage operation

Contextual Info: Ordering number : EN 5179 T h ic k Film Hybrid IC STK405-070 ISA^YOl AF Power Amplifier Split Power Supply (40W + 40W min, THD = 10%) Overview Package Dimensions The STK405-070, a member of the STK405-000 series, is a low-cost, 2-channel audio power amplifier hybrid IC that

transistor Bc 542

Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Contextual Info: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times

lt 7209

Contextual Info: MSE ]> ISOCOn COMPONENTS LTD • MflâbSlO 0D0Q24b S ■ ISO CNX 72AX V v 'h k W ^ y x & i'. ■ r; ; - j.' OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT D E S C R IP T IO N The CNX 72AX is a optically coupled isolator consisting o f a G allium Arsenide infrared emitting

samco-i inverter manual

Abstract: samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams
Contextual Info: NEW-CONCEPT TOP-CLASS INVERTERS FEATURING COMPACT DESIGN & LIGHT WEIGHT Actual Size SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Birth of the new SAMCO-e Series of inverters that offer outstanding operability and multiple functions in a compact body