12A3 Search Results

12A3 Result Highlights (5)

Part	Manufacturer	Description
RJE7248812A3	Amphenol Communications Solutions	Modular Jack - High Performance, Input Output Connectors 8P8C, Shield, With LEDs.
RJE7218812A3	Amphenol Communications Solutions	Modular Jack - High Performance, Input Output Connectors 8P8C, Shield, With LEDs.
10127905-A12A30DLF	Amphenol Communications Solutions	HPCE VT Receptacle with enhanced walls 28P30S
RJE7B18812A3	Amphenol Communications Solutions	Modular Jack - High Performance, Input Output Connectors 8P8C, CAT 6A, RA, Shield, with LEDs.
RJE7118812A3	Amphenol Communications Solutions	Modular Jack - High Performance, Input Output Connectors 8P8C, Shield, With LEDs.

12A3 Price and Stock

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TDK Electronics B32912A3104M000 CAP FILM 0.1UF 20% 760VDC RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B32912A3104M000	Bulk	17,548		1	1 $1.08 10 $0.674 100 $0.4589 1000 $0.34437 10000 $0.2978	Buy Now
Microchip Technology Inc SST25VF512A-33-4C-SAE IC FLASH 512KBIT SPI 33MHZ 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SST25VF512A-33-4C-SAE	Tube	6,178		1	1 $0.61 10 $0.61 100 $0.61 1000 $0.61 10000 $0.61	Buy Now
Microchip Technology Inc	SST25VF512A-33-4C-SAE	Tube	58,338	1 Weeks		1 $0.59 10 $0.59 100 $0.55 1000 $0.53 10000 $0.48	Buy Now
Avnet Silica	SST25VF512A-33-4C-SAE			6 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	SST25VF512A-33-4C-SAE	Tube	1,828			1 - 10 $0.339 100 $0.337 1000 $0.335 10000 $0.335	Buy Now
EBV Elektronik	SST25VF512A-33-4C-SAE			5 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	SST25VF512A-33-4C-SAE		6,600			1 - 10 - 100 $1.206 1000 $0.98 10000 $0.98	Buy Now
TDK Electronics B32912A3333M000 CAP FILM 0.033UF 20% 760VDC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B32912A3333M000	Bulk	4,003		1	1 $0.9 10 $0.651 100 $0.4639 1000 $0.32685 10000 $0.29288	Buy Now
TDK Electronics B32912A3224M000 CAP FILM 0.22UF 20% 760VDC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B32912A3224M000	Bulk	2,302		1	1 $1.48 10 $0.934 100 $0.6489 1000 $0.49694 10000 $0.4435	Buy Now
TDK Corporation MLF2012A3R3JTD25 FIXED IND 3.3UH 50MA 600MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MLF2012A3R3JTD25	Digi-Reel	2,228		1	1 $0.25 10 $0.171 100 $0.1191 1000 $0.11464 10000 $0.11464	Buy Now
	MLF2012A3R3JTD25	Cut Tape	2,228		1	1 $0.25 10 $0.171 100 $0.1191 1000 $0.11464 10000 $0.11464	Buy Now
	MLF2012A3R3JTD25	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.08624	Buy Now

Find more 12A3 price and stock on Findchips.com

12A3 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
12A-3	Inmet	A ATTENUATOR	Scan	PDF
12A-30	Inmet	A ATTENUATOR	Scan	PDF
12A304	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
12A308	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
12A-30F	Inmet	A ATTENUATOR	Scan	PDF
12A-30M	Inmet	A ATTENUATOR	Scan	PDF
12-A3A1	MTI-Milliren Technologies	TCXO	Original	PDF
12-A3B3	MTI-Milliren Technologies	TCXO	Original	PDF
12-A3C6	MTI-Milliren Technologies	TCXO	Original	PDF
12-A3D1	MTI-Milliren Technologies	TCXO	Original	PDF
12-A3E4	MTI-Milliren Technologies	TCXO	Original	PDF
12-A3E5	MTI-Milliren Technologies	TCXO	Original	PDF
12A-3F	Inmet	A ATTENUATOR	Scan	PDF
12-A3F1	MTI-Milliren Technologies	TCXO	Original	PDF

12A-3M	Inmet	A ATTENUATOR	Scan	PDF

12A3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
diode b3 Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6 Text: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3	Original	PDF	35-12A5 50-12A5 75-12A5 B3-12 75-12A3 75-12A3 B3-16 100-12A3 diode b3 MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 200-12A4 10-06A6
diode 12A3 Abstract: No abstract text available Text: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage	Original	PDF	MDI100-12A3 60747and 20131206a diode 12A3
diode 12A3 Abstract: No abstract text available Text: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage	Original	PDF	MID145-12A3 60747and 20131206a diode 12A3
Untitled Abstract: No abstract text available Text: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage	Original	PDF	MID100-12A3 60747and 20131206a
Untitled Abstract: No abstract text available Text: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage	Original	PDF	MID75-12A3 60747and 20131206a
diode 12A3 Abstract: No abstract text available Text: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage	Original	PDF	MDI145-12A3 60747and 20131206a diode 12A3
MII145-12A3 Abstract: No abstract text available Text: MII145-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 160 A VCE(sat) = 2.2 V Phase leg Part number MII145-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses	Original	PDF	MII145-12A3 60747and 20131206a MII145-12A3
MII100 Abstract: No abstract text available Text: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses	Original	PDF	MII100-12A3 60747and 20131206a MII100
Untitled Abstract: No abstract text available Text: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage	Original	PDF	MDI75-12A3 60747and 20131206a
MII75-12A3 Abstract: No abstract text available Text: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses	Original	PDF	MII75-12A3 60747and 20131206a MII75-12A3
MT-8-15A06 Abstract: DP 6 W DMT-8-12A05 Power transformers Text: Series 241 and DP 241 Power Transformers CHASSIS-TRAN Power Transformers Single 115V 241-3-10A1 241-4-10A11 241-5-10A21 241-6-10A31 241-7-10A41 241-8-10A51 241-3-12A2 241-4-12A12 241-5-12A22 241-6-12A32 241-7-12A42 241-8-12A52 241-3-16A3 241-4-16A13 241-5-16A23	Original	PDF	241-3-10A1 241-4-10A11 241-5-10A21 241-6-10A31 241-7-10A41 241-8-10A51 241-3-12A2 241-4-12A12 241-5-12A22 241-6-12A32 MT-8-15A06 DP 6 W DMT-8-12A05 Power transformers
R14 P1F Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12 Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A	Original	PDF	32-Bit TLCS-900/H1 TMP92CF26AXBG TMP92CF26A TMP92CF26AXBG TMP92CF26A 228-pin R14 P1F N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
TA 4572 BP Abstract: 2171B 2600 corning la 7680 AD17 MPC8245 PC8245 Text: Features • 300 MHz - 333 MHz To Be Confirmed-PC603e Processor Core Implementing the • • • • • • • • PowerPC Architecture 32-bit PCI Interface Operating at up to 66 MHz Memory Controller Offering SDRAM Support up to 133 MHz Operation, Support up to	Original	PDF	Confirmed-PC603e 32-bit 16550-compatible PC8245 PC603e 2171D PC8245 TA 4572 BP 2171B 2600 corning la 7680 AD17 MPC8245
Loctite 576 Abstract: No abstract text available Text: Order Number: MPC8245EC/D Rev. 0.4, 9/2001 Semiconductor Products Sector Advance Information MPC8245 Integrated Processor Hardware Specifications The MPC8245 combines a PowerPCTM 603e core microprocessor with a PCI bridge. The PCI support on the MPC8245 will allow system designers to rapidly design systems using peripherals already designed for	Original	PDF	MPC8245EC/D MPC8245 MPC8245EC/D Loctite 576

6A4 mic DIODE Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207 Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE	Original	PDF	VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207
smd diode c539 Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button Text: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF	Original	PDF	S630/S670 BA60-00030A BA68-40005L BA70-00030A BA72-00063A BA73-00001A BA92-00073A 0404agrams smd diode c539 samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
SLB9635TT12 Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F Text: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.	Original	PDF	BA41-00905A 220nF 12MHZ BAV99LT1 100nF MX25L4005AM2C-12G 15-A4 14-C2 14-C2 SLB9635TT12 SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 20B3 diode BA09-00009A B503 F
oz960 Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763 Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO	Original	PDF	MPC7450 oz960 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
ST T4 D560 Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4 Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom	Original	PDF	YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
54B2 Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504 Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS	Original	PDF	RC410MD SB450 BA41-00615A RC410MD Sheet18. Sheet19. Sheet20 TP682 TP685 TP686 54B2 HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
7512a3 Abstract: 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3 Text: N P TIG B T Modules i • High Short Circuit SOA Capability I 1 ■ —II- I I MDI I VCES Type ■c ^CE *at Tc = 25°C A Tc = 80°C A V 37 52 73 25 38 50 80 ► Mil 100-12A3 ► MID 100-12A3 ► MDI 100-12A3 Package style Eon® typ. 125°C mJ Eoff ^thJC	OCR Scan	PDF	150-C I35-12A MWI50-12AS MWI75-12AS 75-12A3 100-12A3 7512a3 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3
Untitled Abstract: No abstract text available Text: SN74ALVCH16863 18-BIT TRANSCEIVER WITH 3-STATE OUTPUTS SCES060A- DECEMBER 1995 - REVISED SEPTEMBER 1997 Member of the Texas Instruments Widebus Family DGG OR DL PACKAGE TOP VIEW EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process io e a b	OCR Scan	PDF	SN74ALVCH16863 18-BIT SCES060A- MIL-STD-883, JESD17 300-mil
2N4241 Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan	PDF	NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
lt 8225 Abstract: 24A100S sm 8012 15A9D 5A250S 12A150S 24A15 12A100S 12a12d 5A48S Text: JLIN-27-2003 10:14 PICO ELECTRONICS INC. 914 738 8225 P .03/09 -e r m SERIES A/SM SURFACE MOUNT and PLUG-IN Hi Reliability and Ultra-Miniature SERIES A: Low Profile 0.5" x 0.5" x 0.3” Height! .»up to U S Watts SERIES SM: Low Profile 0.5" x 0.5" x 0J40" Height! .„up to 125 Watts	OCR Scan	PDF	JLIN-27-2003 com/dcdclow/pe621b JUN-27-2003 coni/dcdclow/pe631 lt 8225 24A100S sm 8012 15A9D 5A250S 12A150S 24A15 12A100S 12a12d 5A48S

12A3 Search Results

12A3 Result Highlights (5)

12A3 Price and Stock

TDK Electronics B32912A3104M000

Microchip Technology Inc SST25VF512A-33-4C-SAE

TDK Electronics B32912A3333M000

TDK Electronics B32912A3224M000

TDK Corporation MLF2012A3R3JTD25

12A3 Datasheets (15)

12A3 Datasheets Context Search

diode b3

diode 12A3

diode 12A3

Untitled

Untitled

diode 12A3

MII145-12A3

MII100

Untitled

MII75-12A3

MT-8-15A06

R14 P1F

TA 4572 BP

Loctite 576

6A4 mic DIODE

smd diode c539

SLB9635TT12

oz960

ST T4 D560

54B2

7512a3

Untitled

2N4241

lt 8225