TRANSISTOR GAAS FET S PARAMETERS Search Results

BP 109 transistor

Abstract: transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915 EC5724
Contextual Info: EC5724 Wide Band Power FET GaAs Field Effect Transistor Description S The EC5724 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz. Individual via hole connection is made

Contextual Info: ñ / A - C O M ADVANCE» Sñ DE |sb4Slfl3 Q0D00D5 5 D MA4F200 Seríes Gallium Arsenide Power Field Effect Transistor GaAs FET m i Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate structure GaAs power FET for am plifier applica­

MRF966

Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Contextual Info: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier

transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

high power FET transistor s-parameters

Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

motorola 304

Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Contextual Info: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier

MGF4931AM

Abstract: GD-30 InGaAs HEMT mitsubishi
Contextual Info: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

GD-30

Abstract: InGaAs HEMT mitsubishi
Contextual Info: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

Contextual Info: Dec./2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

MGF4310

Abstract: 6020M f491
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4851A HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers and oscillators. The lead-less ceramic package assures minimum parasitic losses.

MGF4851A

Contextual Info: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4851A HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers and oscillators. The lead-less ceramic package assures minimum parasitic losses.

dfp 740

Abstract: DFP 830 M5M27C102P MGF4511D m5m27c102pffp
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4511D S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4511D super-low-noise HEMT High Electron Mobility Transistor is designed for use in K band ampli­ fiers. The new metal-ceramic package is used to reduce

InGaAs HEMT mitsubishi

Abstract: 4pin transistor top 205 MGF4934AM GD-30
Contextual Info: Feb./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

mitsubishi 7805

Abstract: MGF4934AM
Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

GD-30

Abstract: MGF4931AM 77153
Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

GD-30

Contextual Info: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

GD-30

Abstract: MGF4934AM
Contextual Info: July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: Apr./2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

hemt

Abstract: GD-30 InGaAs HEMT mitsubishi
Contextual Info: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4935AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

MGF4314E

Abstract: MGF4319E MGF4318E low noise x band hemt transistor MGF4310E gd 361 transistor gs 431 transistor mgf431 TRANSISTOR 132-gd
Contextual Info: bSLHaaT O G l T f l ? 1} S O I • MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4310E Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 3 1 0E OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to

Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @ f=18G Hz High Associated Gain: 9.0dB (Typ.)@ f=18G Hz Lg s 0.25|iim, W g = 200|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX02X is a High Electron M obility Transistor(HEM T)